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MMBV2108LT1G

Onsemi

MMBV2108LT1G by Onsemi

MMBV2108LT1G by Onsemi is a varactor diode with a min quality factor of 300, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 27 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations.

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

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Overview

Unlock the power of high frequency to ultra high frequency applications with the MMBV2108LT1G Varactor Diode from Onsemi. With a minimum quality factor of 300 and a nominal capacitance of 27 pF, this diode offers superior performance in a small outline package. Whether you're designing radar systems or wireless communication devices, this diode's abrupt variable capacitance classification ensures precise tuning capabilities. Trust Onsemi's reputation for quality and reliability to deliver exceptional value to your projects. Elevate your designs with the MMBV2108LT1G and experience the difference in performance and efficiency.

Feature Benefit Bullets

Minimum Quality Factor: 300

Higher quality factor ensures better overall performance and signal quality.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the diode.

Config: SINGLE

Single configuration simplifies the setup and operation of the diode.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification allows for precise and rapid changes in capacitance.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Wide frequency band coverage enables versatile use in different applications.

Surface Mount: YES

Surface mount capability allows for convenient installation and space-saving design.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy integration and placement in circuit boards.

No. of Terminals: 3

Three terminals provide stable connectivity and support various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact device design.

Terminal Finish: TIN

Tin terminal finish ensures good electrical conductivity and corrosion resistance.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections and layouts.

Maximum Power Dissipation: 0.225 W

High maximum power dissipation capability allows for reliable performance under various conditions.

Nominal Diode Capacitance: 27 pF

Nominal capacitance value is suitable for a wide range of applications and frequency requirements.

Minimum Breakdown Voltage: 30 V

Minimum breakdown voltage ensures protection against voltage spikes and surges.

Maximum Time At Peak Reflow Temperature (s): 30

30 seconds maximum time at peak reflow temperature for safe and effective soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability for consistent and durable solder joints.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type for adjustable capacitance and versatile usage.

Terminal Form: GULL WING

Gull wing terminal form for secure and reliable solder connections.

Maximum Repetitive Peak Reverse Voltage: 30 V

Maximum reverse voltage capacity for efficient and safe diode operation.

Diode Cap Tolerance: 10 %

Capacitance tolerance of 10% offers consistent performance and reliability.

Diode Element Material: SILICON

Silicon diode element material for high conductivity and durability.

Minimum Diode Capacitance Ratio: 2.5

Minimum capacitance ratio of 2.5 provides flexibility in capacitance adjustments and tuning.

Technical Specifications

Varactor Diodes MMBV2108LT1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

27 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

300

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MMBV2108LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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