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MV7005T1

Onsemi

MV7005T1 by Onsemi

MV7005T1 by Onsemi is a varactor diode with a min quality factor of 150, suitable for applications requiring variable capacitance. It has a min breakdown voltage of 15V and can handle a max power dissipation of 0.8W. This single-configured diode in a small outline package is ideal for surface mount designs needing precise capacitance control.

Median Price

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Lifecycle Status

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6

In-Stock Inventory

1k+

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Vyrian

USA . 2,392 parts In-Stock

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Diverse Electronics

Canada . 893 parts In-Stock

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Digiode

USA . 782 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Beltway Electronics Company

USA . 25 parts In-Stock

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Prism Electronics

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Ampacity Inc.

Singapore . 751 parts In-Stock

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Kepictronics

USA . 27,860 parts In-Stock

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TANS Electronics

Latvia . 4,889 parts In-Stock

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Problanco Electronics

Mexico . 3,473 parts In-Stock

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Corphita

USA . 2,217 parts In-Stock

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SupplyDigital Components

Austria . 1,729 parts In-Stock

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Kulean Microsystems

USA . 538 parts In-Stock

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Corohmni

South Africa . 199 parts In-Stock

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UHIMA Technologies

Türkiye . 66 parts In-Stock

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Aranea Global

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Overview

Unlock endless possibilities with the MV7005T1 Varactor Diode by Onsemi. Known for their superior quality and reliability, Onsemi delivers cutting-edge technology in a compact package, perfect for a variety of applications. Whether you're looking to enhance signal processing or improve radio frequency tuning, this diode offers unmatched performance with a minimum quality factor of 150. With its small outline design and dual terminal position, this diode provides easy installation and optimal functionality. Upgrade your electronics with the MV7005T1 and experience the difference Onsemi brings to the table.

Feature Benefit Bullets

Minimum Quality Factor: 150

High quality factor ensures better performance and stability in RF circuits.

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode.

Config: SINGLE

Single configuration simplifies circuit design and integration.

Surface Mount: YES

Surface mount capability facilitates easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape allows for compact and space-saving placement on the PCB.

No. of Terminals: 4

Four terminals provide flexibility in circuit connections and layout.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is ideal for compact electronic devices.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and reliability.

Terminal Position: DUAL

Dual terminal position allows for easy and secure connections.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and polarity identification.

Maximum Power Dissipation: 0.8 W

High power dissipation capability allows for reliable operation in demanding applications.

Minimum Breakdown Voltage: 15 V

High breakdown voltage ensures protection against voltage spikes and overloads.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for adjustable capacitance in RF circuits.

Terminal Form: GULL WING

Gull wing terminal form enables easy PCB mounting and soldering.

Diode Cap Tolerance: 13.04 %

Capacitance tolerance of 13.04% ensures precision and accuracy in circuit tuning.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and performance in various operating conditions.

Minimum Diode Capacitance Ratio: 12

High minimum capacitance ratio of 12 provides flexibility in circuit design and tuning.

Technical Specifications

Varactor Diodes MV7005T1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

15 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Cap Tolerance:

13.04 %

Minimum Diode Capacitance Ratio:

12

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.8 W

Qualification:

Not Qualified

Minimum Quality Factor:

150

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV7005T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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