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MV2109ZL1

Onsemi

MV2109ZL1 by Onsemi

MV2109ZL1 by Onsemi is a Varactor Diode with 33pF capacitance, 30V breakdown voltage, and 200 min quality factor. It is ideal for RF tuning applications due to its variable capacitance feature and can operate at temperatures up to 150 °C.

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1k+

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Digiode

USA . 266 parts In-Stock

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Latvia . 8,092 parts In-Stock

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Kulean Microsystems

USA . 6,209 parts In-Stock

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SupplyDigital Components

Austria . 2,849 parts In-Stock

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Problanco Electronics

Mexico . 2,777 parts In-Stock

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Corphita

USA . 1,924 parts In-Stock

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Türkiye . 391 parts In-Stock

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Overview

Discover the MV2109ZL1 by Onsemi - a high-quality Varactor Diode that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this diode is perfect for a wide range of applications. With a minimum quality factor of 200 and a nominal capacitance of 33 pF, this diode provides excellent value and benefits to customers. Whether you're looking for precise tuning in RF applications or need reliable voltage-controlled oscillators, the MV2109ZL1 has you covered. Upgrade your designs with this top-of-the-line Varactor Diode from Onsemi today!

Feature Benefit Bullets

Minimum Quality Factor: 200

A minimum quality factor of 200 indicates high efficiency and performance of the varactor diode, making it suitable for applications requiring high quality signal processing.

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the diode, ensuring durability and reliability in various operating conditions.

Config: SINGLE

The single configuration simplifies circuit design and implementation, making it easier to integrate the varactor diode into electronic systems.

Package Shape: ROUND

The round package shape allows for easy mounting and installation of the varactor diode in different electronic devices and systems.

No. of Terminals: 2

Having 2 terminals simplifies the connection of the varactor diode in circuits, making it user-friendly for design and assembly.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact and space-saving design, suitable for applications where size constraints are present.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, the varactor diode can withstand high temperature environments, ensuring stable performance in challenging conditions.

Terminal Finish: TIN LEAD

The tin lead terminal finish offers good solderability and conductivity, facilitating easy and reliable connections in electronic circuits.

Terminal Position: BOTTOM

The bottom terminal position simplifies the mounting and soldering of the varactor diode onto circuit boards, enhancing ease of use during assembly.

Maximum Power Dissipation: 0.28 W

With a maximum power dissipation of 0.28 W, the varactor diode can handle higher power levels without compromising on performance, making it suitable for demanding applications.

Nominal Diode Capacitance: 33 pF

The nominal diode capacitance of 33 pF indicates the ability of the varactor diode to store and release charge efficiently, enabling smooth signal processing in electronic circuits.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30 V ensures the varactor diode can handle high voltage levels without failure, making it reliable and robust in voltage-sensitive applications.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers the flexibility to adjust capacitance as needed, providing versatility in tuning electronic circuits for optimal performance.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy and secure mounting of the varactor diode on circuit boards, ensuring stable connections and reliability in electronic systems.

Diode Cap Tolerance: 10 %

A diode capacitance tolerance of 10% ensures consistency in performance and reliability, making the varactor diode suitable for precision applications where accuracy is crucial.

Diode Element Material: SILICON

The silicon diode element material offers high performance and reliability, ensuring stable operation of the varactor diode in various environmental conditions.

Minimum Diode Capacitance Ratio: 2.5

A minimum diode capacitance ratio of 2.5 indicates the ability of the varactor diode to provide a wide range of capacitance values, allowing for precise tuning and adjustment in electronic circuits.

Technical Specifications

Varactor Diodes MV2109ZL1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, EUROPEAN PART NUMBER

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2109ZL1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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