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LV2209RLRA

Onsemi

LV2209RLRA by Onsemi

LV2209RLRA by Onsemi is a Varactor Diode with 33pF capacitance, 25V breakdown voltage, and 200 min quality factor. Ideal for RF applications due to its variable capacitance feature and can operate at temperatures up to 150 °C. Its through-hole design and tin-lead finish make it suitable for various electronic circuits.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,491 parts In-Stock

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Vyrian

USA . 2,357 parts In-Stock

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SupplyDigital Components

Austria . 7,603 parts In-Stock

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Problanco Electronics

Mexico . 5,999 parts In-Stock

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Kulean Microsystems

USA . 4,078 parts In-Stock

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TANS Electronics

Latvia . 696 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 519 parts In-Stock

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Corohmni

South Africa . 252 parts In-Stock

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Overview

Unleash the power of innovation with the LV2209RLRA Varactor Diode by Onsemi. Crafted with precision and expertise, this diode boasts a minimum quality factor of 200 and a nominal capacitance of 33 pF, making it ideal for a wide range of applications. Whether you're designing RF circuits or working on frequency tuning projects, this diode's superior performance and reliability will exceed your expectations. Elevate your projects with Onsemi's trusted technology and unlock endless possibilities with the LV2209RLRA Varactor Diode.

Feature Benefit Bullets

Minimum Quality Factor: 200

A high minimum quality factor indicates that this varactor diode has good resonant frequency stability and low loss, making it suitable for high-performance applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides good mechanical protection and insulation for the diode, making it durable and reliable in various environments.

Config: SINGLE

The single configuration simplifies the design and integration process, making it easier to implement this varactor diode in circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and facilitates a more uniform distribution of stress, ensuring better mechanical performance.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and reduces complexity in circuit design, making this varactor diode easy to use.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and space-efficient, making it suitable for applications with limited space constraints.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this varactor diode can withstand elevated temperatures without compromising its performance, ensuring reliability in diverse operating conditions.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and conductivity, making it easy to solder and ensuring efficient electrical connections.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy PCB mounting and soldering, allowing for efficient and convenient integration into circuits.

Maximum Power Dissipation: 0.28 W

With a high maximum power dissipation, this varactor diode can handle higher power levels without overheating, ensuring reliable performance under varying load conditions.

Nominal Diode Capacitance: 33 pF

The nominal diode capacitance of 33 pF indicates a good balance between capacitance value and frequency response, making it suitable for a wide range of frequency applications.

Minimum Breakdown Voltage: 25 V

The minimum breakdown voltage of 25 V provides overvoltage protection, safeguarding the diode from excessive voltage levels and enhancing its durability and lifespan.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers adjustable capacitance levels, allowing for flexible tuning and optimization in RF and microwave circuits.

Terminal Form: THROUGH-HOLE

The through-hole terminal form enables secure mounting on PCBs, ensuring mechanical stability and reliable electrical connections during operation.

Diode Cap Tolerance: 10 %

The 10% diode capacitance tolerance provides consistency in performance and allows for tighter control over capacitance values, ensuring predictable and stable operation.

Diode Element Material: SILICON

Silicon as the diode element material offers good thermal properties, high reliability, and low noise performance, making it a suitable choice for various RF and microwave applications.

Minimum Diode Capacitance Ratio: 2.5

The minimum diode capacitance ratio of 2.5 indicates a significant change in capacitance with applied bias voltage, enabling efficient frequency modulation and tuning capabilities in RF circuits.

Technical Specifications

Varactor Diodes LV2209RLRA attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

LV2209RLRA Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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