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BB212-TAPE-REEL

NXP Semiconductors

BB212-TAPE-REEL by NXP Semiconductors

BB212-TAPE-REEL by NXP Semiconductors is a variable capacitance diode featuring a common cathode configuration with 2 elements. It has a min capacitance ratio of 22.5 and comes in a cylindrical plastic/epoxy package, ideal for RF tuning applications. With 3 terminals and through-hole mounting, it ensures reliable performance in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,443 parts In-Stock

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Anansix

USA . 2,751 parts In-Stock

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2,751

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Vyrian

USA . 155 parts In-Stock

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One Stop Electronics

USA . 752 parts In-Stock

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$0.010

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752

$0.010

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Native Components

USA . 140 parts In-Stock

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$1.496

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Northwest PG Solutions

USA . 2,121 parts In-Stock

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$1.646

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UNI Independent Distributors

Spain . 5,539 parts In-Stock

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Corphita

USA . 121 parts In-Stock

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Overview

Unlock new possibilities in your designs with the BB212-TAPE-REEL from NXP Semiconductors—a leader in innovative solutions. This high-quality varactor diode combines superior performance with reliability, making it ideal for applications like RF tuning and voltage-controlled oscillators. Experience enhanced versatility and efficiency that can elevate your projects, backed by NXP's commitment to excellence and cutting-edge technology. Transform your electronic designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body enhances durability and resistance to environmental factors, making this varactor diode suitable for a variety of applications.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with two elements allows for easy integration into circuit designs, providing flexibility for various RF applications.

Package Shape: ROUND

A round package shape can facilitate better thermal performance and optimize space on printed circuit boards.

No. of Terminals: 3

Having three terminals provides additional connection options, allowing for simplified circuit designs and versatile connectivity.

Package Style (Meter): CYLINDRICAL

The cylindrical package style supports optimal placement in compact spaces, making it ideal for applications constrained by physical dimensions.

Terminal Position: BOTTOM

Bottom terminal positioning helps in achieving lower inductance in high-frequency applications, improving overall performance.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this component is excellent for tuning circuits and frequency modulation, providing versatility in RF design.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures a robust physical connection, enhancing reliability in demanding environments.

No. of Elements: 2

With two elements available, this diode can offer a broader capacitance range and better performance in RF applications.

Diode Element Material: SILICON

Silicon as the diode element material provides good thermal stability and performance, which is crucial for maintaining reliability in active circuits.

Minimum Diode Capacitance Ratio: 22.5

A minimum capacitance ratio of 22.5 indicates significant tuning capability, making this diode suitable for various dynamic tuning applications in RF circuits.

Technical Specifications

Varactor Diodes BB212-TAPE-REEL attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Minimum Diode Capacitance Ratio:

22.5

Diode Element Material:

SILICON

JESD-30 Code:

O-PBCY-T3

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

BB212-TAPE-REEL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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