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MMVL229AT1

Onsemi

MMVL229AT1 by Onsemi

MMVL229AT1 by Onsemi is a varactor diode with 15 pF nominal capacitance, 15 V peak reverse voltage, and 6.67% capacitance tolerance. It is designed for ultra high frequency applications in small outline packages with gull wing terminals, suitable for surface mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,424 parts In-Stock

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Vyrian

USA . 1,555 parts In-Stock

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SupplyDigital Components

Austria . 6,809 parts In-Stock

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TANS Electronics

Latvia . 1,419 parts In-Stock

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UHIMA Technologies

Türkiye . 788 parts In-Stock

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Kulean Microsystems

USA . 747 parts In-Stock

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Corohmni

South Africa . 342 parts In-Stock

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Problanco Electronics

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Corphita

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Overview

Unlock the power of cutting-edge technology with the MMVL229AT1 Varactor Diode by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-quality products that deliver exceptional performance in ultra-high frequency applications. This versatile diode offers unparalleled value with its variable capacitance design, providing customers with precise control and flexibility in their projects. Whether you're designing for telecommunications, radar systems, or frequency synthesizers, trust Onsemi to provide reliable solutions that exceed your expectations. Experience the difference with the MMVL229AT1 Varactor Diode today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diode, ensuring reliable performance.

Frequency Band: ULTRA HIGH FREQUENCY

Ideal for high-frequency applications, offering excellent performance in such scenarios.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Terminal Finish: TIN LEAD

Provides good conductivity and durability for the terminals.

Nominal Diode Capacitance: 15 pF

Offers a specific capacitance value suitable for the intended application.

Diode Type: VARIABLE CAPACITANCE DIODE

Allows for adjustable capacitance, providing flexibility in circuit design.

Maximum Repetitive Peak Reverse Voltage: 15 V

Can handle high reverse voltages, increasing the diode's reliability.

Diode Cap Tolerance: 6.67 %

Provides a closely controlled capacitance tolerance for consistent performance.

Minimum Diode Capacitance Ratio: 2

Offers a wide range of capacitance adjustment, catering to different circuit requirements.

Technical Specifications

Varactor Diodes MMVL229AT1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Cap Tolerance:

6.67 %

Minimum Diode Capacitance Ratio:

2

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMVL229AT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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