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MMVL535T1

Onsemi

MMVL535T1 by Onsemi

MMVL535T1 by Onsemi is a varactor diode with 18.7 pF capacitance, 15 V peak reverse voltage, and 6.67% capacitance tolerance. It is ideal for ultra high frequency applications due to its variable capacitance design and small outline package style. The diode's gull wing terminal form and silicon element material make it suitable for surface mount configurations in electronic circuits.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 29,575 parts In-Stock

1+ parts

-

100+ parts

$0.132

1k+ parts

$0.110

10k+ parts

$0.098

29,575

-

$0.132

$0.110

$0.098

DigiKey

USA . 29,575 parts In-Stock

1+ parts

-

100+ parts

-

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$0.170

29,575

-

-

-

$0.170

Verical

USA . 29,575 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.122

29,575

-

-

-

$0.122

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,149 parts In-Stock

1+ parts

$0.087

100+ parts

-

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-

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1,149

$0.087

-

-

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Digiode

USA . 1,936 parts In-Stock

1+ parts

$0.103

100+ parts

-

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1,936

$0.103

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DigiKey Marketplace

USA . 29,575 parts In-Stock

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100+ parts

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29,575

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 274 parts In-Stock

1+ parts

$0.087

100+ parts

-

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274

$0.087

-

-

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Corphita

USA . 1,267 parts In-Stock

1+ parts

$0.097

100+ parts

-

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1,267

$0.097

-

-

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Continental Prestige Electronics

USA . 29,575 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.096

10k+ parts

-

29,575

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-

$0.096

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QUARKTWIN TECHNOLOGY LTD

USA . 12,446 parts In-Stock

1+ parts

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12,446

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TANS Electronics

Latvia . 6,661 parts In-Stock

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6,661

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SupplyDigital Components

Austria . 6,216 parts In-Stock

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6,216

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Problanco Electronics

Mexico . 2,024 parts In-Stock

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2,024

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Kulean Microsystems

USA . 386 parts In-Stock

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386

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UHIMA Technologies

Türkiye . 1 parts In-Stock

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Overview

Experience the superior quality and performance of the MMVL535T1 Varactor Diode by Onsemi. With its ultra-high frequency capabilities and variable capacitance design, this product is perfect for a wide range of applications. From RF tuning to frequency synthesis, the MMVL535T1 offers unmatched value and benefits. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and see the difference for yourself. Elevate your projects with the MMVL535T1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and reliability for long-term use.

Config: SINGLE

Simplifies circuit design and reduces complexity.

Frequency Band: ULTRA HIGH FREQUENCY

Ideal for applications requiring high-frequency signals.

Surface Mount: YES

Easy to install and suitable for SMT assembly processes.

Package Shape: RECTANGULAR

Space-efficient design for compact electronic devices.

No. of Terminals: 2

Simplified connection and integration within circuits.

Terminal Finish: TIN LEAD

Ensures good conductivity and solderability.

Nominal Diode Capacitance: 18.7 pF

Provides specific capacitance value for precise applications.

Diode Type: VARIABLE CAPACITANCE DIODE

Allows for tuning of capacitance based on circuit requirements.

Terminal Form: GULL WING

Facilitates easy soldering and secure installation on PCBs.

Maximum Repetitive Peak Reverse Voltage: 15 V

Suitable for low to medium voltage applications.

Diode Cap Tolerance: 6.67 %

Provides a reasonable tolerance level for accurate performance.

Diode Element Material: SILICON

Offers reliable and consistent performance over time.

Minimum Diode Capacitance Ratio: 2.6

Allows for a wide range of capacitance adjustment for flexibility in circuit design.

Technical Specifications

Varactor Diodes MMVL535T1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Cap Tolerance:

6.67 %

Minimum Diode Capacitance Ratio:

2.6

Nominal Diode Capacitance:

18.7 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMVL535T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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