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MMBV3102LT1

Onsemi

MMBV3102LT1 by Onsemi

MMBV3102LT1 by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 22 pF, and max power dissipation of 0.225 W. It is designed for very high frequency applications requiring hyperabrupt variable capacitance diodes in small outline packages.

Median Price

$1.660

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 1,311 parts In-Stock

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$0.059

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American Microsemiconductor Inc.

USA . 2,050 parts In-Stock

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$3.260

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Classic Components Corporation

USA . 2,983 parts In-Stock

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Digiode

USA . 617 parts In-Stock

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Resion

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Mil-Aero Solutions, Inc.

USA . 40 parts In-Stock

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Corohmni

South Africa . 134 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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TANS Electronics

Latvia . 3,033 parts In-Stock

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SupplyDigital Components

Austria . 2,263 parts In-Stock

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Kulean Microsystems

USA . 2,096 parts In-Stock

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Corphita

USA . 1,778 parts In-Stock

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Problanco Electronics

Mexico . 768 parts In-Stock

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UHIMA Technologies

Türkiye . 206 parts In-Stock

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Overview

Enhance your electronic designs with the MMBV3102LT1 Varactor Diode from Onsemi. With a minimum quality factor of 200 and hyperabrupt variable capacitance diode classification, this diode is perfect for very high-frequency applications. Its small outline package shape and dual terminal position make it easy to integrate into your projects. Experience superior performance and reliability with Onsemi's top-notch manufacturing standards. Unlock new possibilities in RF circuit design and modulation techniques with the MMBV3102LT1 Varactor Diode.

Feature Benefit Bullets

Minimum Quality Factor: 200

A high quality factor indicates better performance and efficiency in signal processing, making this varactor diode a reliable choice for high frequency applications.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material is durable and provides good insulation, ensuring reliability and longevity of the diode in various operating conditions.

Config: SINGLE

Single configuration simplifies circuit design and integration, making this varactor diode easy to incorporate into electronic systems.

Variable Capacitance Diode Classification: HYPERABRUPT

Hyperabrupt varactor diodes offer fast response times and precise tuning capabilities, making them ideal for frequency agile applications.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency operation, this varactor diode is suitable for applications requiring fast signal processing and high data transmission rates.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and reducing production costs.

Package Shape: RECTANGULAR

Rectangular package shape provides compact and space-saving design, making this varactor diode suitable for applications with limited board space.

No. of Terminals: 3

Having 3 terminals enables versatile connection options and allows for flexible circuit configurations in various electronic systems.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves board space and enhances thermal performance, making this varactor diode a practical choice for compact designs.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish ensures good solderability and reliable electrical connections, enhancing the overall performance and durability of the varactor diode.

Terminal Position: DUAL

Dual terminal position allows for easy and secure mounting on the PCB, improving mechanical stability and signal integrity in electronic circuits.

Maximum Power Dissipation: 0.225 W

With a high maximum power dissipation rating, this varactor diode can handle higher power levels without compromising performance or reliability.

Nominal Diode Capacitance: 22 pF

The nominal capacitance value of 22 pF ensures accurate tuning and stable performance in RF and microwave applications.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30 V provides protection against voltage spikes and ensures safe operation in high voltage environments.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures reliable soldering and assembly during manufacturing processes.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235 °C, this varactor diode can withstand high temperature soldering processes, ensuring robust assembly and reliability.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers precise frequency tuning capabilities, making it suitable for voltage-controlled oscillator circuits and frequency modulators.

Terminal Form: GULL WING

Gull wing terminal form allows for easy surface mounting and provides mechanical strength, ensuring secure attachment to the PCB and reliable electrical connections.

Maximum Repetitive Peak Reverse Voltage: 30 V

A maximum repetitive peak reverse voltage of 30 V ensures reliable performance and protection against reverse voltage conditions in the circuit.

Diode Cap Tolerance: 11.11 %

An 11.11% tolerance in diode capacitance provides consistency in performance and allows for precise tuning and frequency control in electronic circuits.

Diode Element Material: SILICON

Silicon diode element material offers high temperature stability, low leakage current, and good linearity, making this varactor diode a reliable choice for various RF and microwave applications.

Minimum Diode Capacitance Ratio: 4.5

A minimum diode capacitance ratio of 4.5 indicates a wide tuning range and precise frequency control, making this varactor diode ideal for applications requiring fine frequency adjustments.

Technical Specifications

Varactor Diodes MMBV3102LT1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

11.11 %

Minimum Diode Capacitance Ratio:

4.5

Nominal Diode Capacitance:

22 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

MMBV3102LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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