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BB249

NXP Semiconductors

BB249 by NXP Semiconductors

BB249 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a reverse test voltage of 28 V, and operates up to 100 °C. Ideal for RF tuning circuits, it ensures reliable performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,436 parts In-Stock

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2,436

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Digiode

USA . 1,553 parts In-Stock

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1,553

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Vyrian

USA . 200 parts In-Stock

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200

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Distributors (Availability)

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Native Components

USA . 435 parts In-Stock

1+ parts

$0.588

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435

$0.588

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Northwest PG Solutions

USA . 989 parts In-Stock

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$0.647

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989

$0.647

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One Stop Electronics

USA . 1,206 parts In-Stock

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$2.010

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$2.010

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Corphita

USA . 3,164 parts In-Stock

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3,164

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UNI Independent Distributors

Spain . 623 parts In-Stock

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Overview

Unlock the potential of your designs with the BB249 from NXP Semiconductors—a pinnacle of quality in varactor diodes. Crafted with precision in glass packaging, this versatile component excels in high-frequency applications, delivering unmatched performance and reliability. Experience significant advantages such as minimal reverse current and high breakdown voltage, ensuring optimal functionality even in demanding environments. Trust in NXP's legacy of innovation to elevate your projects!

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material offers excellent thermal stability, ensuring reliable performance across varying temperatures.

Config: SINGLE

A single configuration makes this varactor diode compact and suitable for designs needing minimal space.

Frequency Band: VERY HIGH FREQUENCY

Optimized for very high frequency applications, making it ideal for RF communication and other advanced electronic circuits.

Surface Mount: YES

Surface mount capability allows for easier integration into modern circuit boards, enhancing manufacturing efficiency.

Maximum Reverse Current: 0.01 uA

The extremely low maximum reverse current reduces power loss and increases overall circuit efficiency.

Package Shape: ROUND

The round package shape fits well into various circuit designs and aids in better thermal dissipation.

Reverse Test Voltage: 28 V

A respectable reverse test voltage enhances reliability in high-voltage applications, providing peace of mind in performance.

No. of Terminals: 2

With only two terminals, this diode provides a straightforward integration path for various electronic designs.

Package Style (Meter): LONG FORM

The long form package style can offer better handling in automated assembly processes, improving production efficiency.

Maximum Operating Temperature: 100 °C

A high maximum operating temperature allows for reliable usage in harsh environments without compromising performance.

Terminal Position: END

End terminal positioning enhances connection robustness and simplifies PCB layout designs.

Case Connection: ISOLATED

Isolated case connection provides improved safety and performance, reducing the risk of unwanted circuit interactions.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30V makes this diode suitable for various high-voltage applications.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it is perfect for tuning applications in frequency modulation circuits.

Terminal Form: WRAP AROUND

The wrap-around terminal form provides enhanced mechanical stability and aids in soldering to the PCB.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent electrical characteristics and long-term reliability.

Minimum Diode Capacitance Ratio: 8

A minimum diode capacitance ratio of 8 indicates significant tuning range, making it valuable in dynamic applications such as voltage-controlled oscillators.

Technical Specifications

Varactor Diodes BB249 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Additional Features:

3% MATCHED SETS ARE AVAILABLE

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

8

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

O-LELF-R2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

28 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

END

Trade Compliance

BB249 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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