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1N5697

Onsemi

1N5697 by Onsemi

1N5697 by Onsemi is a varactor diode with 8.2 pF nominal capacitance, 65 V breakdown voltage, and -65 to 175 °C operating temp range. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 2,325 parts In-Stock

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Digiode

USA . 636 parts In-Stock

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Northwest PG Solutions

USA . 1,304 parts In-Stock

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Kulean Microsystems

USA . 7,422 parts In-Stock

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TANS Electronics

Latvia . 3,677 parts In-Stock

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Problanco Electronics

Mexico . 2,884 parts In-Stock

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SupplyDigital Components

Austria . 1,238 parts In-Stock

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Native Components

USA . 291 parts In-Stock

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Corphita

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UHIMA Technologies

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Corohmni

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Overview

Unlock endless possibilities with the 1N5697 Varactor Diode from Onsemi. Crafted with precision and quality in mind, this diode offers superior performance and reliability for a wide range of applications. Whether you're looking to enhance RF communication systems or improve signal processing, the 1N5697 delivers exceptional value, benefits, and advantages that will take your projects to the next level. Trust in Onsemi's expertise and choose the 1N5697 for all your varactor diode needs.

Feature Benefit Bullets

Minimum Quality Factor: 450

High quality factor ensures better performance and stability in applications requiring precise tuning and low loss.

Package Body Material: GLASS

Glass package provides durability and excellent electrical isolation for reliable operation.

Config: SINGLE

Single configuration simplifies circuit design and integration into systems.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance allows for abrupt transition in capacitance values, enabling fast and accurate tuning.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures minimal power loss and high efficiency.

Package Shape: ROUND

Round shape facilitates easy mounting and handling during assembly.

Reverse Test Voltage: 60 V

High reverse test voltage capability provides reliable protection against reverse bias conditions.

No. of Terminals: 2

Simple two-terminal design for easy connectivity and integration.

Package Style (Meter): LONG FORM

Long form package style allows for better heat dissipation and mechanical stability.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliability in high-temperature environments.

Minimum Operating Temperature: -65 °C

Wide operating temperature range enables performance in both extreme cold and hot conditions.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and conductivity for secure connections.

Terminal Position: AXIAL

Axial terminal position allows for easy insertion into circuit boards and better mechanical stability.

Case Connection: ISOLATED

Isolated case connection ensures electrical insulation for safe operation.

Maximum Power Dissipation: 0.4 W

High power dissipation capability allows for handling of high power levels without damage.

Nominal Diode Capacitance: 8.2 pF

Low nominal capacitance for precise tuning and high frequency applications.

Minimum Breakdown Voltage: 65 V

High minimum breakdown voltage ensures protection against voltage spikes and overloads.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type allows for dynamic tuning in various RF and microwave applications.

Terminal Form: WIRE

Wire terminal form enables easy connection and flexibility in mounting options.

Maximum Repetitive Peak Reverse Voltage: 60 V

High repetitive peak reverse voltage rating for reliable performance in repetitive signal applications.

Diode Cap Tolerance: 20 %

Tight capacitance tolerance ensures accurate and consistent performance in tuning circuits.

Diode Element Material: SILICON

Silicon diode element material offers stable and reliable performance over a wide range of temperatures and frequencies.

Minimum Diode Capacitance Ratio: 2.7

High minimum capacitance ratio allows for wide tuning range and flexibility in applications.

Technical Specifications

Varactor Diodes 1N5697 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

65 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.7

Nominal Diode Capacitance:

8.2 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

450

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

60 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5697 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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