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MV2101RL

Onsemi

MV2101RL by Onsemi

MV2101RL by Onsemi is a Varactor Diode with a min Quality Factor of 450, Nominal Capacitance of 6.8 pF, and Breakdown Voltage of 30 V. It is ideal for applications requiring variable capacitance in electronic circuits due to its high-quality performance and temperature tolerance up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,194 parts In-Stock

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Vyrian

USA . 587 parts In-Stock

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587

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SupplyDigital Components

Austria . 7,975 parts In-Stock

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7,975

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Problanco Electronics

Mexico . 5,813 parts In-Stock

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TANS Electronics

Latvia . 4,033 parts In-Stock

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Kulean Microsystems

USA . 3,506 parts In-Stock

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Corphita

USA . 820 parts In-Stock

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820

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Corohmni

South Africa . 268 parts In-Stock

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UHIMA Technologies

Türkiye . 74 parts In-Stock

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Overview

Unlock a world of endless possibilities with the MV2101RL Varactor Diode by Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by professionals worldwide. The MV2101RL is a game-changer in the field of variable capacitance diodes, offering a minimum quality factor of 450 and a nominal diode capacitance of 6.8 pF. Perfect for applications requiring precise tuning and frequency control, this diode boasts a minimum breakdown voltage of 30V and a maximum operating temperature of 150 °C. Trust Onsemi to deliver top-notch performance and value with the MV2101RL Varactor Diode.

Feature Benefit Bullets

Minimum Quality Factor: 450

The high quality factor ensures efficient performance and reliability in various applications.

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, making it suitable for different environments.

Config: SINGLE

Single configuration simplifies the design and integration of the diode into electronic circuits.

Package Shape: ROUND

The round shape allows for easier mounting and installation in various electronic devices.

No. of Terminals: 2

Having only 2 terminals simplifies the connections and reduces the complexity of the circuit design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides a compact design and ease of handling during installation.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the diode can withstand heat and perform reliably in demanding conditions.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good electrical conductivity and solderability for secure connections.

Terminal Position: BOTTOM

Having the terminal position at the bottom simplifies the layout and installation of the diode in circuits.

Maximum Power Dissipation: 0.28 W

The high maximum power dissipation capability allows the diode to handle high power levels without damage.

Nominal Diode Capacitance: 6.8 pF

The nominal capacitance value indicates the electrical properties that can contribute to better performance in circuit applications.

Minimum Breakdown Voltage: 30 V

The high minimum breakdown voltage rating provides protection against voltage spikes and ensures the diode's longevity.

Diode Type: VARIABLE CAPACITANCE DIODE

The variable capacitance feature allows for tuning and adjustment in circuits, making it versatile for different applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form makes it easy to mount the diode securely on a circuit board.

Diode Cap Tolerance: 10 %

The tolerance level allows for consistent performance and reliable operation in various conditions.

Diode Element Material: SILICON

Silicon diode element material provides stability and reliability in electronic circuits.

Minimum Diode Capacitance Ratio: 2.5

The minimum capacitance ratio indicates the range of capacitance values that can be achieved with this diode, providing flexibility in circuit design.

Technical Specifications

Varactor Diodes MV2101RL attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, EUROPEAN PART NUMBER

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

6.8 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

450

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2101RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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