Loading...

934042930115

NXP Semiconductors

934042930115 by NXP Semiconductors

The NXP 934042930115 is a variable capacitance diode ideal for RF tuning applications. It features a max reverse current of 0.01 µA, operates b/w -55 °C to 125 °C, and has a breakdown voltage of 10 V. Its compact design ensures efficient surface mount integration.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,749 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,749

-

-

-

-

Digiode

USA . 1,274 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,274

-

-

-

-

Vyrian

USA . 884 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

884

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 4,561 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,561

-

-

-

-

Overview

Elevate your designs with the NXP 934042930115 varactor diode, a testament to NXP Semiconductors' commitment to quality and innovation. This surface-mount component excels in tuning applications, offering exceptional reliability across diverse environments—from -55 °C to 125 °C. Its compact size and efficiency make it ideal for RF circuits, enhancing performance while minimizing space. Enjoy the peace of mind that comes with NXP’s industry-leading expertise and support.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance to environmental factors, making this varactor diode suitable for a variety of applications.

Config: SINGLE

A single configuration simplifies circuit design and allows for efficient integration into electronic systems.

Surface Mount: YES

Being a surface mount device enables ease of placement and soldering on PCBs, which can reduce assembly time and costs.

Maximum Reverse Current: 0.01 uA

A low maximum reverse current enhances the diode's reliability and efficiency, minimizing leakage and improving performance in RF applications.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact profile, facilitating denser circuit layouts and better use of PCB space.

Reverse Test Voltage: 10 V

With a reverse test voltage of 10 V, this varactor diode exhibits robust characteristics under reverse bias, contributing to its reliability in various circuits.

No. of Terminals: 2

A simple 2-terminal design allows for straightforward connections in circuits, enhancing ease of use and setup.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this diode suitable for space-constrained applications, allowing versatile integration into different designs.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature ensures the diode can function effectively in demanding high-temperature environments, increasing its applicability.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this varactor diode is capable of operating in extremely cold conditions, broadening its usage scenarios.

Terminal Position: DUAL

The dual terminal position aids in flexibility during PCB designing, allowing for better routing of traces in complex circuits.

Maximum Power Dissipation: 0.2 W

The capability to dissipate up to 0.2 W ensures reliable operation without overheating, which is crucial for high-frequency applications.

Minimum Breakdown Voltage: 10 V

A minimum breakdown voltage of 10 V provides stability and reliability under over-voltage conditions, safeguarding circuit integrity.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it is ideal for RF tuning and voltage-controlled oscillators, allowing for precision in tuning applications.

Terminal Form: GULL WING

Gull wing terminals ease soldering and improve mechanical stability, contributing to a robust connection in surface mount applications.

Diode Element Material: SILICON

Silicon as the diode element material provides excellent electrical characteristics and efficiency, making this diode a strong performer in various applications.

Minimum Diode Capacitance Ratio: 1.6929

A minimum capacitance ratio of 1.6929 allows for effective tuning in RF circuits, enhancing performance in frequency-modulated applications.

Technical Specifications

Varactor Diodes 934042930115 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Minimum Breakdown Voltage:

10 V

Config:

SINGLE

Minimum Diode Capacitance Ratio:

1.6929

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

10 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

934042930115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20