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MMBV3102LT1G

Onsemi

MMBV3102LT1G by Onsemi

MMBV3102LT1G by Onsemi is a single hyperabrupt varactor diode with 22pF nominal capacitance, suitable for very high frequency applications. It has a min breakdown voltage of 30V and operates at a max temperature of 125 °C. This small outline diode in gull wing terminal form is surface mountable and has a power dissipation of 0.225W.

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Overview

Unlock the potential of your electronic designs with the MMBV3102LT1G Varactor Diode by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in all their products. Ideal for very high-frequency applications, this hyperabrupt diode offers a minimum quality factor of 200 and a nominal capacitance of 22pF. Its small outline package and dual terminal position make it easy to integrate into your circuit design. Experience enhanced performance and efficiency with the MMBV3102LT1G, providing customers with the value and benefits they need for their projects.

Feature Benefit Bullets

Minimum Quality Factor: 200

A high quality factor indicates that this varactor diode has good performance and can effectively control capacitance variations.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this varactor diode lightweight and durable, ideal for various applications.

Config: SINGLE

A single configuration simplifies the design and integration of this varactor diode into circuits.

Variable Capacitance Diode Classification: HYPERABRUPT

The hyperabrupt classification indicates that this varactor diode has a sharp change in capacitance with voltage, making it suitable for applications requiring precise tuning.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, this varactor diode is capable of handling high-frequency signals efficiently.

Surface Mount: YES

Being surface mount compatible allows for easy and convenient mounting of this varactor diode on circuit boards.

Package Shape: RECTANGULAR

The rectangular package shape offers versatility in placement and allows for efficient use of space on the circuit board.

No. of Terminals: 3

With 3 terminals, this varactor diode provides flexibility in connections and circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this varactor diode suitable for compact electronic devices.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this varactor diode can withstand elevated temperatures without compromising performance.

Terminal Finish: TIN

The tin terminal finish ensures good conductivity and corrosion resistance, enhancing the reliability of this varactor diode.

Terminal Position: DUAL

Dual terminal position enables easier installation and connection in electronic circuits.

Maximum Power Dissipation: 0.225 W

This varactor diode can dissipate a maximum power of 0.225 W, making it suitable for high-power applications.

Nominal Diode Capacitance: 22 pF

The nominal capacitance value of 22 pF ensures stable performance in tuning and modulation applications.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30 V provides protection against voltage spikes and ensures the reliability of this varactor diode.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds allows for efficient soldering during assembly.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this varactor diode can withstand the soldering process without damage.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers tunable capacitance for use in voltage-controlled oscillators, filters, and frequency multipliers.

Terminal Form: GULL WING

The gull wing terminal form simplifies the soldering process and ensures secure connection in surface mount applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

The maximum repetitive peak reverse voltage of 30 V indicates the voltage capability of this varactor diode in reverse bias conditions.

Diode Cap Tolerance: 11.1 %

The diode capacitance tolerance of 11.1% ensures that this varactor diode operates within specified capacitance limits for accurate tuning.

Diode Element Material: SILICON

Made of silicon, this varactor diode offers stable performance over a wide range of temperatures and operating conditions.

Minimum Diode Capacitance Ratio: 4.5

The minimum capacitance ratio of 4.5 indicates the range of capacitance variation achievable with this varactor diode, making it suitable for voltage-controlled applications.

Technical Specifications

Varactor Diodes MMBV3102LT1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

11.1 %

Minimum Diode Capacitance Ratio:

4.5

Nominal Diode Capacitance:

22 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

MMBV3102LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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