Loading...

1N5463

Onsemi

1N5463 by Onsemi

1N5463 by Onsemi is a varactor diode with 10pF nominal capacitance, abrupt variable capacitance classification, and 30V breakdown voltage. It is used in RF applications for frequency tuning due to its high quality factor of 550 and low reverse current of 0.00000002uA.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,117 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,117

-

-

-

-

Digiode

USA . 1,242 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,242

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 253 parts In-Stock

1+ parts

$0.685

100+ parts

-

1k+ parts

-

10k+ parts

-

253

$0.685

-

-

-

Northwest PG Solutions

USA . 2,329 parts In-Stock

1+ parts

$0.753

100+ parts

-

1k+ parts

-

10k+ parts

-

2,329

$0.753

-

-

-

TANS Electronics

Latvia . 6,408 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,408

-

-

-

-

Problanco Electronics

Mexico . 5,435 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,435

-

-

-

-

Kulean Microsystems

USA . 4,876 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,876

-

-

-

-

Corphita

USA . 1,547 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,547

-

-

-

-

SupplyDigital Components

Austria . 626 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

626

-

-

-

-

UHIMA Technologies

Türkiye . 378 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

378

-

-

-

-

Corohmni

South Africa . 119 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

119

-

-

-

-

Overview

Enhance your electronic projects with the 1N5463 from Onsemi, a top-quality Varactor Diode that offers unmatched performance and reliability. Manufactured by the trusted brand Onsemi, this diode is perfect for applications requiring variable capacitance, such as voltage-controlled oscillators and frequency modulators. With a high minimum quality factor of 550 and a maximum reverse current of only 0.00000002 uA, this diode ensures optimal functionality and efficiency. Experience the value and benefits of using the 1N5463 in your designs today!

Feature Benefit Bullets

Minimum Quality Factor: 550

High quality factor ensures efficient performance and excellent signal quality.

Package Body Material: GLASS

Glass material provides durability and protection to the diode, ensuring long-term reliability.

Config: SINGLE

Single configuration simplifies installation and usage of the varactor diode.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification ensures precise and fast changes in capacitance, ideal for applications requiring quick adjustments.

Maximum Reverse Current: 0.00000002 uA

Low reverse current minimizes power loss and enhances efficiency of the diode.

Package Shape: ROUND

Round shape allows for easy integration into circuits and compact designs.

Reverse Test Voltage: 25 V

Suitable reverse test voltage for various applications, ensuring compatibility and reliable performance.

No. of Terminals: 2

Two terminals make for easy connection and installation in circuits.

Package Style (Meter): LONG FORM

Long form package style provides sufficient space for diode components, reducing the risk of damage and ensuring stability.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable performance in various temperature conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures the diode can function in cold environments without issues.

Terminal Finish: TIN LEAD

Tin lead finish provides good conductivity and solderability for easy installation and reliable connections.

Terminal Position: AXIAL

Axial terminal position allows for easy integration into circuits and ensures stable connections.

Case Connection: ISOLATED

Isolated case connection prevents interference and ensures proper functioning of the diode.

Maximum Power Dissipation: 0.4 W

High maximum power dissipation capability allows the diode to handle power efficiently.

Nominal Diode Capacitance: 10 pF

Nominal capacitance value suitable for various applications, providing versatility and flexibility.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage ensures the diode can handle voltage spikes without damage.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type allows for adjustable capacitance, making it versatile for different applications.

Terminal Form: WIRE

Wire terminal form provides flexibility and ease of connection in circuits.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage capability ensures reliable performance in high voltage conditions.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% provides accuracy and consistency in performance.

Diode Element Material: SILICON

Silicon material in the diode element ensures stability and reliability in operation.

Minimum Diode Capacitance Ratio: 2.8

Minimum capacitance ratio of 2.8 allows for precise control and adjustment of capacitance as needed in circuits.

Technical Specifications

Varactor Diodes 1N5463 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.8

Nominal Diode Capacitance:

10 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

550

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5463 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20