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1N5148A

Onsemi

1N5148A by Onsemi

1N5148A by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 47 pF, and breakdown voltage of 60V. It is used in RF tuning circuits for applications requiring variable capacitance control.

Median Price

$28.597

Lifecycle Status

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10

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1k+

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Freelance Electronics

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American Microsemiconductor Inc.

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Component Sense

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LittleDiode

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Corohmni

South Africa . 423 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the 1N5148A Varactor Diode by Onsemi. With a minimum quality factor of 200, this high-quality diode offers superior performance and reliability. Its variable capacitance feature makes it ideal for applications such as frequency tuning, voltage-controlled oscillators, and phase-locked loops. Trust in Onsemi's reputation for excellence in semiconductor manufacturing to deliver a product that meets your needs. Experience the value and benefits that the 1N5148A brings to your projects today.

Feature Benefit Bullets

Minimum Quality Factor: 200

With a minimum quality factor of 200, this varactor diode offers high performance and efficiency in signal processing applications.

Package Body Material: GLASS

The glass package body material ensures high durability and reliable performance of the varactor diode in various operating conditions.

Config: SINGLE

The single configuration simplifies the design and installation process, making this varactor diode easy to integrate into electronic circuits.

Package Shape: ROUND

The round package shape provides uniform distribution of stress and allows for easy mounting, enhancing the overall stability of the varactor diode.

No. of Terminals: 2

With two terminals, this varactor diode offers simple connectivity and ease of use in circuit design and implementation.

Package Style (Meter): LONG FORM

The long form package style ensures efficient heat dissipation and helps maintain the overall performance and reliability of the varactor diode.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175 °C, this varactor diode can withstand high temperature environments, ensuring stable performance under extreme conditions.

Terminal Position: AXIAL

The axial terminal position simplifies the connection process and allows for easy integration of the varactor diode into circuit designs.

Case Connection: ISOLATED

The isolated case connection ensures proper insulation and helps prevent electrical interference, enhancing the overall performance and reliability of the varactor diode.

Maximum Power Dissipation: 0.4 W

With a maximum power dissipation of 0.4 W, this varactor diode can handle high power levels, making it suitable for various high-frequency applications.

Nominal Diode Capacitance: 47 pF

The nominal diode capacitance of 47 pF offers precise control and modulation of capacitance, making this varactor diode ideal for frequency tuning and voltage-controlled applications.

Minimum Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60 V, this varactor diode offers reliable operation and protection against voltage surges, ensuring long-term performance and stability.

Diode Type: VARIABLE CAPACITANCE DIODE

The variable capacitance diode type allows for adjustable capacitance levels, making this varactor diode versatile and suitable for a wide range of applications.

Terminal Form: WIRE

The wire terminal form offers easy and reliable connection options, allowing for quick and secure installation of the varactor diode in electronic circuits.

Diode Cap Tolerance: 10 %

With a diode capacitance tolerance of 10%, this varactor diode provides accurate and consistent capacitance values, ensuring precision in signal processing applications.

Diode Element Material: SILICON

The silicon diode element material offers high performance and reliability, making this varactor diode suitable for demanding signal processing and frequency control applications.

Minimum Diode Capacitance Ratio: 3.2

With a minimum diode capacitance ratio of 3.2, this varactor diode offers a wide range of capacitance values, allowing for precise frequency tuning and modulation in various electronic circuits.

Technical Specifications

Varactor Diodes 1N5148A attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

60 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

3.2

Nominal Diode Capacitance:

47 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-204AA

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

1N5148A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-00-503-8992, 5961005038992, 5961-00-233-7293, 5961002337293, 5961-00-110-0919, 5961001100919, 5961-00-848-1904, 5961008481904, 5961-01-214-5681, 5961012145681, 5961-01-317-6589, 5961013176589, 5961-99-118-0447, 5961991180447

NIIN

005038992, 002337293, 001100919, 008481904, 012145681, 013176589, 991180447

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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