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MV2109

Onsemi

MV2109 by Onsemi

MV2109 by Onsemi is a varactor diode with a min quality factor of 200, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 33 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode has a breakdown voltage of 30 V and is classified as an abrupt variable capacitance diode with through-hole terminal form.

Median Price

$0.172

Lifecycle Status

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19

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1k+

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Avnet

USA . 1,800 parts In-Stock

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Rochester

USA . 290 parts In-Stock

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$0.172

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$0.143

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$0.127

290

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$0.172

$0.143

$0.127

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Digiode

USA . 1,261 parts In-Stock

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$0.141

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Vyrian

USA . 1,944 parts In-Stock

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DF Sales Co.

USA . 2,455 parts In-Stock

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$0.160

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DF Sales Co.

USA . 2,455 parts In-Stock

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$0.160

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$0.160

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Forefront Electronics and Design

USA . 500 parts In-Stock

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$9.800

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$9.800

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American Microsemiconductor Inc.

USA . 6,170 parts In-Stock

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$12.500

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Electronic Expediters

USA . 84,698 parts In-Stock

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LWI Electronics Inc

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Prism Electronics

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Bristol Electronics

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MISTER SPROCKETS

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Sunrise Surplus Inc.

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North Shore Components

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Mil-Aero Solutions, Inc.

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M&R Communications

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PC Components Company LLC

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Resion

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Corphita

USA . 1,510 parts In-Stock

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Corohmni

South Africa . 54 parts In-Stock

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SupplyDigital Components

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Kulean Microsystems

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Perfect Parts

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Problanco Electronics

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TANS Electronics

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Infinite Electronics LLP (Excess)

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UHIMA Technologies

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Overview

The MV2109 Varactor Diode by Onsemi is a high-quality component that offers precise capacitance control for applications in the high frequency to ultra high frequency bands. Manufactured by Onsemi, a trusted name in the industry, this diode ensures reliable performance and durability. Whether you need to tune RF circuits or design voltage-controlled oscillators, the MV2109 delivers exceptional value with its 33 pF nominal capacitance, 30V breakdown voltage, and 200 minimum quality factor. Trust Onsemi's expertise and choose the MV2109 for your next project.

Feature Benefit Bullets

Minimum Quality Factor: 200

This high quality factor ensures optimal performance and efficiency of the varactor diode.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the diode.

Config: SINGLE

Single configuration simplifies the circuit design and integration of the varactor diode.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Wide frequency band coverage allows for versatile applications in high frequency to ultra high frequency ranges.

Maximum Power Dissipation: 0.28 W

The high power dissipation capability ensures the diode can handle power effectively without overheating.

Nominal Diode Capacitance: 33 pF

The specified capacitance value is ideal for applications requiring precise tuning and frequency control.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30V provides protection against voltage spikes and surges.

Maximum Repetitive Peak Reverse Voltage: 30 V

The maximum peak reverse voltage rating of 30V ensures the diode can withstand reverse voltage without damage.

Technical Specifications

Varactor Diodes MV2109 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MV2109 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-074-7922, 5961010747922

NIIN

010747922

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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