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1N4786A

International Semiconductor

1N4786A by International Semiconductor

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Median Price

-

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ECAB

Sweden . 49 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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49

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Technical Specifications

Varactor Diodes 1N4786A attributes and parameters. Explore more Varactor Diodes devices from International Semiconductor

Specs

Additional Features:

HIGH Q, LOW LEAKAGE

Minimum Breakdown Voltage:

25 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.4

Nominal Diode Capacitance:

6.8 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

1N4786A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-00-001-3279, 5961000013279

NIIN

000013279

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