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SMMBV809LT1

Onsemi

SMMBV809LT1 by Onsemi

SMMBV809LT1 by Onsemi is a single hyperabrupt varactor diode with 5.3pF capacitance, 20V breakdown voltage, and 0.225W power dissipation. Ideal for ultra high frequency applications requiring small outline rectangular package with gull wing terminals.

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Problanco Electronics

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Corphita

USA . 1,644 parts In-Stock

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Kulean Microsystems

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Overview

Unlock the potential of your electronic designs with the SMMBV809LT1 varactor diode from Onsemi. With a minimum quality factor of 75 and ultra-high frequency capabilities, this diode offers top-notch performance for applications in telecommunications, radar systems, and more. The hyperabrupt variable capacitance classification ensures precise control, while the small outline package makes integration a breeze. Trust in the quality and expertise of Onsemi to deliver reliable components that exceed expectations. Elevate your projects with the SMMBV809LT1 and experience the difference in performance and efficiency.

Feature Benefit Bullets

Minimum Quality Factor: 75

Higher quality factor indicates better performance in terms of frequency selectivity and signal quality, making this varactor diode suitable for high frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as package body material provides good durability and resistance to environmental factors, ensuring reliability in different operating conditions.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various electronic applications.

Variable Capacitance Diode Classification: HYPERABRUPT

Hyperabrupt varactor diodes offer steep capacitance-voltage characteristics, allowing for precise tuning and modulation in RF and microwave circuits.

Frequency Band: ULTRA HIGH FREQUENCY

Designed for ultra high frequency applications, this varactor diode is suitable for use in advanced communication systems and high-speed data transmission.

Surface Mount: YES

Surface mount capability simplifies PCB assembly and enables compact device designs, saving space and reducing production costs.

Package Shape: RECTANGULAR

Rectangular package shape offers easy handling and placement on circuit boards, enhancing overall system integration.

No. of Terminals: 3

Three terminals provide flexibility in connection options and signal control, making it versatile for various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on PCBs and allows for higher component density, ideal for compact electronic devices and systems.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and conductivity, ensuring secure connections and stable performance in diverse operating environments.

Terminal Position: DUAL

Dual terminal position facilitates efficient signal transmission and control, enhancing the functionality and reliability of the varactor diode.

Maximum Power Dissipation: 0.225 W

With a high maximum power dissipation rating, this varactor diode can handle moderate power levels without compromising performance or reliability.

Nominal Diode Capacitance: 5.3 pF

The nominal capacitance value of 5.3 pF provides suitable tuning range and performance characteristics for various RF and microwave applications.

Minimum Breakdown Voltage: 20 V

A minimum breakdown voltage of 20 V ensures robustness and protection against voltage surges, enhancing the durability and longevity of the varactor diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it allows for precise tuning of capacitance values, making it ideal for voltage-controlled oscillator (VCO) and frequency modulation applications.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and mounting on PCBs, ensuring secure connections and reliable performance in demanding electronic systems.

Diode Cap Tolerance: 15.09 %

The tight capacitance tolerance of 15.09% ensures accurate and consistent performance in frequency-dependent circuits, supporting reliable signal processing and modulation.

Diode Element Material: SILICON

Silicon as diode element material offers good temperature stability and low leakage current, contributing to the overall performance and reliability of the varactor diode.

Minimum Diode Capacitance Ratio: 1.8

A minimum capacitance ratio of 1.8 provides sufficient tuning range for frequency modulation and signal processing, making this varactor diode versatile in various applications.

Technical Specifications

Varactor Diodes SMMBV809LT1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

20 V

Config:

SINGLE

Diode Cap Tolerance:

15.09 %

Minimum Diode Capacitance Ratio:

1.8

Nominal Diode Capacitance:

5.3 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

75

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

SMMBV809LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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