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1N5462

Onsemi

1N5462 by Onsemi

1N5462 by Onsemi is a Varactor Diode with a Min Quality Factor of 600, Max Reverse Current of 0.00000002 uA, and Nominal Diode Capacitance of 8.2 pF. It is used in applications requiring variable capacitance diodes for tuning circuits with a voltage range from -65 to 175 °C.

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Overview

Unlock the power of advanced technology with the 1N5462 Varactor Diode by Onsemi. With a minimum quality factor of 600 and a maximum reverse current of 0.00000002 uA, this diode offers unparalleled performance and reliability. Perfect for applications where precision and stability are crucial, such as in RF tuning circuits or frequency modulators. Trust Onsemi's expertise and innovation to deliver exceptional quality and value with the 1N5462 Varactor Diode.

Feature Benefit Bullets

Minimum Quality Factor: 600

A high quality factor indicates good performance and stability in high-frequency applications, making this varactor diode a reliable choice.

Package Body Material: GLASS

Glass provides excellent protection and insulation, ensuring the durability and reliability of the varactor diode.

Config: SINGLE

Single configuration simplifies the setup and integration of the varactor diode in electronic circuits.

Variable Capacitance Diode Classification: ABRUPT

The abrupt classification ensures precise and rapid capacitance changes, making this varactor diode suitable for frequency tuning applications.

Maximum Reverse Current: 0.00000002 uA

Low reverse current minimizes power losses and improves efficiency in electronic circuits utilizing this varactor diode.

Package Shape: ROUND

The round shape offers easy handling and mounting, enhancing the usability of this varactor diode in various electronic devices.

Reverse Test Voltage: 25 V

The high reverse test voltage rating ensures safe operation and protection of the varactor diode in reverse bias conditions.

No. of Terminals: 2

Having only two terminals simplifies the connection and integration of this varactor diode in electronic circuits.

Package Style (Meter): LONG FORM

The long form package style offers easy identification and installation of the varactor diode in electronic equipment.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows this varactor diode to withstand harsh environmental conditions and thermal stress.

Minimum Operating Temperature: -65 °C

Wide operating temperature range enables this varactor diode to function reliably in extreme cold conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides a reliable and durable connection, ensuring stable performance of this varactor diode in electronic circuits.

Terminal Position: AXIAL

Axial terminal position facilitates easy identification and connection of this varactor diode in electronic circuits.

Case Connection: ISOLATED

Isolated case connection prevents unwanted interference and enhances the stability of this varactor diode in electronic systems.

Maximum Power Dissipation: 0.4 W

High maximum power dissipation rating allows this varactor diode to handle significant power levels without performance degradation.

Nominal Diode Capacitance: 8.2 pF

The nominal capacitance value offers precise tuning capabilities, making this varactor diode suitable for resonant circuit applications.

Minimum Breakdown Voltage: 30 V

The high minimum breakdown voltage ensures protection against voltage spikes and overloads, enhancing the reliability of this varactor diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product provides adjustable capacitance for frequency tuning applications.

Terminal Form: WIRE

Wire terminal form offers easy connection and secure attachment of this varactor diode in electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 30 V

The high maximum repetitive peak reverse voltage rating ensures the durability and long-term reliability of this varactor diode.

Diode Cap Tolerance: 20 %

The 20% capacitance tolerance provides flexibility in circuit design and tuning, making this varactor diode versatile in various applications.

Diode Element Material: SILICON

Silicon diode element material offers excellent performance and reliability, making this varactor diode a preferred choice in electronic circuits.

Minimum Diode Capacitance Ratio: 2.8

The minimum capacitance ratio ensures precise and effective tuning capabilities, making this varactor diode suitable for frequency modulation applications.

Technical Specifications

Varactor Diodes 1N5462 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.8

Nominal Diode Capacitance:

8.2 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

600

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5462 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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