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CAT24C256XE-T2

Onsemi

CAT24C256XE-T2 by Onsemi

CAT24C256XE-T2 by Onsemi is an EEPROM with 32KX8 organization, 262144 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates in synchronous mode at a max clock frequency of 1 MHz. Ideal for automotive applications due to its small outline package style and wide temperature range from -40 to 125 °C.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

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Native Components

USA . 367 parts In-Stock

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$0.678

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Northwest PG Solutions

USA . 21 parts In-Stock

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$0.746

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Advanced Electronics

New Zealand . 17 parts In-Stock

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$6.705

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$6.102

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$5.498

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AZTECH Wire

Italy . 610 parts In-Stock

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Component Stockers USA

USA . 560 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 4,928 parts In-Stock

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Problanco Electronics

Mexico . 4,784 parts In-Stock

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Kulean Microsystems

USA . 2,785 parts In-Stock

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SupplyDigital Components

Austria . 2,135 parts In-Stock

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Corphita

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UHIMA Technologies

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Microchip USA

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Overview

Discover the CAT24C256XE-T2 by Onsemi, a high-quality EEPROM that offers exceptional value and benefits. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for automotive applications and features a compact design with reliable performance. With a memory capacity of 32KX8, a wide operating temperature range, and superior write protection, this EEPROM is ideal for customers looking for a durable and efficient solution. Upgrade your system with the CAT24C256XE-T2 and experience seamless operation and peace of mind knowing your data is secure.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the EEPROM, ensuring a longer lifespan.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer and processing, making the EEPROM more efficient.

Nominal Supply Voltage / Vsup (V): 5

Operating at a higher supply voltage of 5V ensures stable performance and reliability.

No. of Terminals: 8

Having a sufficient number of terminals allows for easy connectivity and integration into circuitry.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the EEPROM can function reliably in harsh environments.

Memory IC Type: EEPROM

Being an Electrically Erasable Programmable Read-Only Memory, this product offers flexibility in data storage and retrieval.

Technical Specifications

EEPROM CAT24C256XE-T2 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

100 YEAR DATA RETENTION

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

5.255 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

2.03 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000002 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5.23 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

CAT24C256XE-T2 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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