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EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.

EEPROM

Available Parts 850

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
CAT25010VE-GT3D by Onsemi

CAT25010VE-GT3D

Onsemi

CAT25010VE-GT3D by Onsemi is an EEPROM with 128x8 organization, 1024-bit memory density, and SPI serial bus type. It operates at a max clock frequency of 10 MHz and has a write protection feature. Ideal for automotive applications due to its temperature grade and endurance of 1M Write/Erase cycles.

IT ALSO OPERATES AT 5MHZ AT 1.8MIN

10 MHz

100

1000000 Write/Erase Cycles

R-PDSO-G8

e4

4.9 mm

1024 bit

EEPROM

8

1

1

8

128 words

128

SYNCHRONOUS

125 Cel

-40 Cel

128X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE/SOFTWARE

CAT25010VI-GT3D by Onsemi

CAT25010VI-GT3D

Onsemi

CAT25010VI-GT3D by Onsemi is a 1024-bit EEPROM with 128x8 organization, SPI serial bus type, and 10 MHz clock frequency. It operates at -40 to 85 °C for industrial applications requiring reliable non-volatile memory storage. The small outline package with gull wing terminals makes it suitable for space-constrained designs.

10 MHz

100

1000000 Write/Erase Cycles

R-PDSO-G8

e4

4.9 mm

1024 bit

EEPROM

8

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE/SOFTWARE

CAT25010VP2IGT3D by Onsemi

CAT25010VP2IGT3D

Onsemi

CAT25010VP2IGT3D by Onsemi is a 1024-bit EEPROM with SPI serial bus, 128x8 organization, and 1000000 write/erase cycles. It operates at -40 to 85 °C, has a max clock frequency of 10 MHz, and is ideal for industrial applications requiring low power consumption.

10 MHz

100

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

1024 bit

EEPROM

8

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.8 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE/SOFTWARE

CAT25010YI-GT3D by Onsemi

CAT25010YI-GT3D

Onsemi

CAT25010YI-GT3D by Onsemi is an EEPROM with 128x8 organization, SPI serial bus type, and 1024-bit memory density. It operates at a max clock frequency of 10 MHz and has a write protection feature for hardware/software security. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

10 MHz

100

1000000 Write/Erase Cycles

R-PDSO-G8

e4

4.4 mm

1024 bit

EEPROM

8

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

1.2 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

30

3 mm

5 ms

HARDWARE/SOFTWARE

CAT25010ZI-GT3D by Onsemi

CAT25010ZI-GT3D

Onsemi

CAT25010ZI-GT3D by Onsemi is an EEPROM with 128x8 organization, SPI serial bus type, and 1024-bit memory density. Operating at -40 to 85 °C, it offers 1000000 write/erase cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

10 MHz

100

1000000 Write/Erase Cycles

S-PDSO-G8

e4

3 mm

1024 bit

EEPROM

8

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

1.1 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

30

3 mm

5 ms

HARDWARE/SOFTWARE

CAT25020LI-GD by Onsemi

CAT25020LI-GD

Onsemi

CAT25020LI-GD by Onsemi is an EEPROM with 256x8 organization, SPI serial bus type, and 2048-bit memory density. It operates at a max clock frequency of 10 MHz and has a write protection feature for hardware/software security. Ideal for industrial applications requiring reliable non-volatile memory storage.

10 MHz

100

1000000 Write/Erase Cycles

R-PDIP-T8

e4

9.27 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

260

2/5

Not Qualified

5.33 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

CAT25020VI-GT3D by Onsemi

CAT25020VI-GT3D

Onsemi

CAT25020VI-GT3D by Onsemi is an 8-terminal EEPROM with 256x8 organization, operating at 5V. It offers a max clock frequency of 10MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

10 MHz

100

1000000 Write/Erase Cycles

R-PDSO-G8

e4

4.9 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE/SOFTWARE

CAT25020VP2IGT3D by Onsemi

CAT25020VP2IGT3D

Onsemi

CAT25020VP2IGT3D by Onsemi is a 256x8 EEPROM with SPI serial bus, 2048-bit memory density, and 1000000 write/erase cycles. Operating at -40 to 85 °C, it has a max clock frequency of 10 MHz and supports hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

10 MHz

100

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.8 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE/SOFTWARE

CAT25020YI-GT3D by Onsemi

CAT25020YI-GT3D

Onsemi

CAT25020YI-GT3D by Onsemi is an 8-terminal EEPROM with 256x8 organization, SPI serial bus type, and 2048-bit memory density. It operates at a max clock frequency of 10 MHz and has a write protection feature for hardware/software security. Ideal for industrial applications requiring reliable non-volatile memory storage.

10 MHz

100

1000000 Write/Erase Cycles

R-PDSO-G8

e4

4.4 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

1.2 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

30

3 mm

5 ms

HARDWARE/SOFTWARE

CAT25040LI-GD by Onsemi

CAT25040LI-GD

Onsemi

CAT25040LI-GD by Onsemi is an EEPROM with 512x8 organization, SPI serial bus type, and 10 MHz clock frequency. It operates at -40 to 85 °C, has a 5V nominal voltage, and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

10 MHz

100

1000000 Write/Erase Cycles

R-PDIP-T8

e4

9.27 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

260

2/5

Not Qualified

5.33 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

CAT25040VI-GT3D by Onsemi

CAT25040VI-GT3D

Onsemi

CAT25040VI-GT3D by Onsemi is a 512x8 EEPROM with SPI serial bus, 4096-bit memory density, and 1M write/erase cycles. Operating at -40 to 85 °C, it has a max clock frequency of 10MHz and supports hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

10 MHz

100

1000000 Write/Erase Cycles

R-PDSO-G8

e4

4.9 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE/SOFTWARE

CAT25040VP2IGT3D by Onsemi

CAT25040VP2IGT3D

Onsemi

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.5 V;

10 MHz

100

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.8 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE/SOFTWARE

CAT25040YI-GT3D by Onsemi

CAT25040YI-GT3D

Onsemi

CAT25040YI-GT3D by Onsemi is an EEPROM with 512x8 organization, SPI serial bus type, and 10 MHz clock frequency. It operates at -40 to 85 °C, has a 5V supply voltage, and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

10 MHz

100

1000000 Write/Erase Cycles

R-PDSO-G8

e4

4.4 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

1.2 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

30

3 mm

5 ms

HARDWARE/SOFTWARE

M24256-BFMB6TG by STMicroelectronics

M24256-BFMB6TG

STMicroelectronics

STMicroelectronics' M24256-BFMB6TG is an EEPROM with 32KX8 organization, 262144 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates in industrial temperature range (-40 to 85 °C) and uses I2C serial bus for control, suitable for applications requiring reliable non-volatile memory storage.

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

262144 bit

EEPROM

8

1

8

32768 words

32K

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8/5

Not Qualified

I2C

.000001 Amp

EEPROMs

5 mA

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

.5 mm

DUAL

HARDWARE

M24256-DRDW6TP by STMicroelectronics

M24256-DRDW6TP

STMicroelectronics

STMicroelectronics M24256-DRDW6TP is an EEPROM with 32KX8 organization, operating at 2.5V, and featuring I2C control byte for hardware write protection. It has a memory density of 262144 bit, endurance of 4M cycles, and operates in industrial temperature range. Ideal for applications requiring reliable non-volatile memory storage with serial bus interface.

1 MHz

200

4000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.4 mm

262144 bit

EEPROM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

2.5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

30

3 mm

5 ms

HARDWARE

M24256-DRMN6TP by STMicroelectronics

M24256-DRMN6TP

STMicroelectronics

STMicroelectronics M24256-DRMN6TP is an EEPROM with 32KX8 organization, operating at 2.5V, and offering 4000000 write/erase cycles. It has a serial interface using I2C control byte for industrial applications requiring reliable non-volatile memory storage in a small outline package.

1 MHz

200

4000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

262144 bit

EEPROM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2.5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

3.9 mm

HARDWARE

M95512-DRMB6TG by STMicroelectronics

M95512-DRMB6TG

STMicroelectronics

STMicroelectronics M95512-DRMB6TG is an EEPROM with 64KX8 organization, SPI serial bus type, and 524288-bit memory density. It operates b/w -40 to 85 °C and has a min data retention time of 40s. Ideal for industrial applications requiring reliable non-volatile memory storage.

40

1000000 Write/Erase Cycles

R-PDSO-N8

e4

524288 bit

EEPROM

8

1

8

65536 words

64K

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

SPI

.000005 Amp

EEPROMs

8 mA

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

30

HARDWARE/SOFTWARE

SRI512-SBN18/1GE by STMicroelectronics

SRI512-SBN18/1GE

STMicroelectronics

SRI512-SBN18/1GE by STMicroelectronics is a 512-bit EEPROM with 32x16 organization. It operates asynchronously at supply voltages b/w 2.5V to 3.5V, featuring a max write cycle time of 5ms. This serial memory IC is ideal for applications requiring non-volatile data storage in temperature ranges from -20 °C to 85°C.

X-XUUC-N

512 bit

EEPROM

16

1

32 words

32

ASYNCHRONOUS

85 Cel

-20 Cel

32X16

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

SERIAL

3

3.5 V

2.5 V

3

YES

CMOS

OTHER

NO LEAD

UPPER

5 ms

SRI512-W4/1GE by STMicroelectronics

SRI512-W4/1GE

STMicroelectronics

SRI512-W4/1GE by STMicroelectronics is a 512-bit EEPROM with 32x16 organization, operating at 3V. It features asynchronous mode, serial interface, and -20 to 85 °C temperature range. Ideal for applications requiring non-volatile memory storage in compact electronic devices.

X-XUUC-N

512 bit

EEPROM

16

1

32 words

32

ASYNCHRONOUS

85 Cel

-20 Cel

32X16

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

SERIAL

3

3.5 V

2.5 V

3

YES

CMOS

OTHER

NO LEAD

UPPER

5 ms

M24512-DRDW6TP by STMicroelectronics

M24512-DRDW6TP

STMicroelectronics

STMicroelectronics M24512-DRDW6TP is an EEPROM with 64KX8 organization, operating at 2/5V. It features I2C control byte, hardware write protection, and 1MHz clock frequency. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

1 MHz

200

4000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

4.4 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2/5

5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

M24512-DRMB6TG by STMicroelectronics

M24512-DRMB6TG

STMicroelectronics

STMicroelectronics M24512-DRMB6TG is an EEPROM with 64KX8 organization, operating at 2.5V, and featuring I2C control byte 1010MMMR. It has a small outline package style suitable for industrial temperature grades applications. With endurance of 1M cycles, it offers reliable data storage in various electronic devices.

1 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-N8

e4

3 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE

M24512-DRMN6TP by STMicroelectronics

M24512-DRMN6TP

STMicroelectronics

STMicroelectronics M24512-DRMN6TP is a 64KX8 EEPROM with I2C control, operating at 1 MHz. It has a memory density of 524288 bit and can endure 4M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

1 MHz

200

4000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

M24512-RMB6TG by STMicroelectronics

M24512-RMB6TG

STMicroelectronics

M24512-RMB6TG by STMicroelectronics is an EEPROM with 64KX8 organization, I2C control byte 1010MMMR, and 1 MHz max clock frequency. It is used in industrial applications for data storage due to its 1000000 write/erase cycles endurance and serial bus type I2C interface.

1 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-N8

e4

3 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE

M24512-RMC6TG by STMicroelectronics

M24512-RMC6TG

STMicroelectronics

M24512-RMC6TG by STMicroelectronics is a 64KX8 EEPROM with a memory density of 524288 bit. It operates in synchronous mode at a max clock frequency of 1 MHz and has a small outline package shape suitable for industrial applications.

1 MHz

R-PDSO-N8

3 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

5

.6 mm

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

5 ms

CAT25M01VE-GT3 by Onsemi

CAT25M01VE-GT3

Onsemi

CAT25M01VE-GT3 by Onsemi is a 128KX8 EEPROM with 1048576 bit memory density. It operates at 5V, has a clock frequency of 10 MHz, and uses SPI serial bus type. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and small outline package style.

10 MHz

R-PDSO-G8

e4

4.9 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

125 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.75 mm

SPI

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

24FC64F-I/ST by Microchip Technology

24FC64F-I/ST

Microchip Technology

24FC64F-I/ST by Microchip Technology is an EEPROM with 8KX8 organization, operating at 1 MHz. It features a max temperature of 85°C and endurance of 1M Write/Erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.4 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

5

Not Qualified

TS 16949

1.2 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

24AA64-E/MS by Microchip Technology

24AA64-E/MS

Microchip Technology

EEPROM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 10; Package Shape: SQUARE; Technology: CMOS; Maximum Seated Height: 1.1 mm;

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G10

e3

3 mm

65536 bit

EEPROM

8

1

1

1

10

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

TSSOP10,.19,20

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

4.5

AEC-Q100

1.1 mm

I2C

.000005 Amp

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.5 mm

DUAL

40

3 mm

5 ms

HARDWARE

24AA64T-E/SN by Microchip Technology

24AA64T-E/SN

Microchip Technology

24AA64T-E/SN by Microchip Tech is an 8KX8 EEPROM with 65536-bit memory density. Operating at 4.5V, it offers a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for automotive applications due to AEC-Q100 screening level and -40 to 125°C operating temperature range.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

4.5

Not Qualified

AEC-Q100

1.75 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

M24256-BFCS6TP/K by STMicroelectronics

M24256-BFCS6TP/K

STMicroelectronics

STMicroelectronics M24256-BFCS6TP/K is a 32KX8 EEPROM with 1.8V nominal voltage, operating in synchronous mode at up to 1MHz clock frequency. It features I2C control byte for hardware write protection and offers 4000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

1 MHz

200

4000000 Write/Erase Cycles

1010DDDR

R-PBGA-B8

1.358 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

VFBGA

BGA8,3X5,14/8

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

1.8/5

Not Qualified

.58 mm

I2C

.000001 Amp

EEPROMs

2.5 mA

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.4 mm

BOTTOM

1.271 mm

5 ms

HARDWARE

CAT24C02HU4IGT3A by Onsemi

CAT24C02HU4IGT3A

Onsemi

CAT24C02HU4IGT3A by Onsemi is an EEPROM with 256x8 organization, operating at 3.3V. It offers 1000000 write/erase cycles, I2C serial bus type, and a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8/5

Not Qualified

.55 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE

CAT24C02VP2IGT3A by Onsemi

CAT24C02VP2IGT3A

Onsemi

CAT24C02VP2IGT3A by Onsemi is an EEPROM with 256x8 organization, operating at 3.3V. It offers a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8/5

Not Qualified

.8 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE

CAT24C04C5ATR by Onsemi

CAT24C04C5ATR

Onsemi

CAT24C04C5ATR by Onsemi is a 4Kx1 EEPROM with I2C control byte. It operates at 3.3V, has 4096-bit memory density, and supports up to 0.4 MHz clock frequency. Ideal for industrial applications requiring low power consumption and high endurance with 1000000 write/erase cycles.

.4 MHz

100

1000000 Write/Erase Cycles

1010000R

R-PBGA-B5

e1

.86 mm

4096 bit

EEPROM

1

1

1

5

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX1

PLASTIC/EPOXY

VFBGA

BGA5,3X3,10/6

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

1.8/5

Not Qualified

.39 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.3 mm

BOTTOM

NOT SPECIFIED

.84 mm

5 ms

HARDWARE

BR93H56RFJ-2CE2 by ROHM

BR93H56RFJ-2CE2

ROHM

BR93H56RFJ-2CE2 by ROHM is an AEC-Q100 EEPROM with 128x16 organization, 2048-bit memory density, and 2 MHz clock frequency. Ideal for automotive applications due to its low profile design, -40 to 125°C operating temperature range, and software write protection feature.

SEATED HT-CALCULATED

2 MHz

100

1000000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

125 Cel

-40 Cel

128X16

PLASTIC/EPOXY

LSOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE, LOW PROFILE

SERIAL

NOT SPECIFIED

3/5

Not Qualified

AEC-Q100

1.65 mm

MICROWIRE

.00001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

4 ms

SOFTWARE

CAT24C512ZI-T3 by Onsemi

CAT24C512ZI-T3

Onsemi

CAT24C512ZI-T3 by Onsemi is a 64KX8 EEPROM with 524288 bit memory density. It operates at 0.4 MHz clock frequency and has 1000000 Write/Erase Cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e4

3 mm

524288 bit

EEPROM

8

1

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

NO

1.1 mm

I2C

.000002 Amp

2.5 mA

5.5 V

1.8 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

M95512-RCS6TP/K by STMicroelectronics

M95512-RCS6TP/K

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 5.5 V;

5 MHz

R-PBGA-B8

1.937 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

.58 mm

SPI

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

NOT SPECIFIED

1.271 mm

M95512-RMC6TG by STMicroelectronics

M95512-RMC6TG

STMicroelectronics

STMicroelectronics M95512-RMC6TG is a 64KX8 EEPROM with SPI interface, operating at 5 MHz. It has 1000000 Write/Erase Cycles endurance and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring low power consumption and high reliability.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-N8

3 mm

524288 bit

EEPROM

8

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

2/5

Not Qualified

.6 mm

SPI

.000003 Amp

EEPROMs

2.5 mA

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

HARDWARE/SOFTWARE

M95020-RMC6TG by STMicroelectronics

M95020-RMC6TG

STMicroelectronics

STMicroelectronics M95020-RMC6TG is a 2Kx1 EEPROM with SPI serial bus, 2048-bit memory density, and 1000000 write/erase cycles. It operates at -40 to 85 °C for industrial applications, with a max clock frequency of 5 MHz. The package is small outline rectangular, suitable for surface mount assembly.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-N8

3 mm

2048 bit

EEPROM

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX1

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2/5

Not Qualified

.6 mm

SPI

.000001 Amp

EEPROMs

3 mA

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

5 ms

HARDWARE/SOFTWARE

M95160-DWDW4TP/K by STMicroelectronics

M95160-DWDW4TP/K

STMicroelectronics

STMicroelectronics M95160-DWDW4TP/K is an AEC-Q100 EEPROM with 2KX8 organization, SPI serial bus type, and 16384-bit memory density. Operating at -40 to 145 °C, it's ideal for automotive applications requiring reliable data storage with 4000000 write/erase cycles endurance.

10 MHz

40

4000000 Write/Erase Cycles

R-PDSO-G8

e4

4.4 mm

16384 bit

EEPROM

8

1

1

8

2048 words

2K

SYNCHRONOUS

145 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

Not Qualified

AEC-Q100

1.2 mm

SPI

.000002 Amp

EEPROMs

4 mA

5.5 V

2.5 V

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

4 ms

HARDWARE/SOFTWARE

BR24G1M-3A by ROHM

BR24G1M-3A

ROHM

ROHM's BR24G1M-3A is an 8-terminal EEPROM with 128Kx8 organization, operating at 1MHz clock frequency. Ideal for industrial applications, it offers a memory density of 1048576 bits and endurance of 1000000 write/erase cycles.

ROHM-S-A0000225889 REF SEATED HTCONSIDER

1 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

9.3 mm

1048576 bit

EEPROM

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

NOT SPECIFIED

1.8/5

Not Qualified

3.7 mm

I2C

.000003 Amp

EEPROMs

4.5 mA

5.5 V

1.7 V

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

7.62 mm

5 ms

HARDWARE

M24LR04E-RUW20/2 by STMicroelectronics

M24LR04E-RUW20/2

STMicroelectronics

STMicroelectronics M24LR04E-RUW20/2 is a 4096-bit EEPROM with I2C serial bus, operating at 2.5V, -40 to 85 °C temp range. Suitable for industrial applications, it offers synchronous operation, 128x32 organization, and a max clock frequency of 0.4 MHz.

8

.4 MHz

X-XUUC-N

4096 bit

EEPROM

32

1

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X32

UNSPECIFIED

DIE

UNSPECIFIED

UNCASED CHIP

SERIAL

I2C

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

5 ms

25AA02E64T-I/SN by Microchip Technology

25AA02E64T-I/SN

Microchip Technology

25AA02E64T-I/SN by Microchip Technology is a serial EEPROM with 256x8 organization, SPI interface, and 10 MHz clock frequency. It operates in industrial temperature range (-40 to 85 °C) and has a max supply voltage of 5.5V. Ideal for applications requiring reliable non-volatile memory storage with high endurance of 1M write/erase cycles.

ALSO OPERATES AT 2.5V TO 5.5V @5MHZ AND 1.8V TO 2.5V @3MHZ

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

5

Not Qualified

TS 16949

1.75 mm

SPI

.000001 Amp

EEPROMs

5 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

M95080-DWDW4TP/K by STMicroelectronics

M95080-DWDW4TP/K

STMicroelectronics

STMicroelectronics M95080-DWDW4TP/K is an AEC-Q100 EEPROM with 1KX8 organization, operating at -40 to 145 °C. It features a serial SPI interface, 10 MHz clock frequency, and 8192-bit memory density. Ideal for automotive applications requiring reliable non-volatile data storage in a compact 0.65 mm pitch package.

10 MHz

R-PDSO-G8

4.4 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

145 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

AEC-Q100

1.2 mm

SPI

5.5 V

2.5 V

YES

CMOS

AUTOMOTIVE

GULL WING

.65 mm

DUAL

3 mm

4 ms

CAV24M01YE-GT3 by Onsemi

CAV24M01YE-GT3

Onsemi

CAV24M01YE-GT3 by Onsemi is an EEPROM with 128KX8 organization, operating at 5V. It features a serial interface, small outline package style, and automotive temperature grade. Ideal for applications requiring non-volatile memory storage in harsh environments.

.4 MHz

R-PDSO-G8

e4

4.4 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

125 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

NOT SPECIFIED

1.2 mm

I2C

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.65 mm

DUAL

NOT SPECIFIED

3 mm

5 ms

24AA256UID-I/P by Microchip Technology

24AA256UID-I/P

Microchip Technology

24AA256UID-I/P by Microchip Technology is an EEPROM with 32KX8 organization, operating at 4.5V and -40 to 85 °C temperature range. It features I2C control byte 1010DDDR, serial interface, and endurance of 1M cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

ALSO OPERATES AT 1.7V TO 2.5V @ 0.1MHZ

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.271 mm

262144 bit

EEPROM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

1.8/5

4.5

Not Qualified

TS 16949

5.334 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

1.27 mm

DUAL

7.62 mm

5 ms

93AA46CT-I/MNY by Microchip Technology

93AA46CT-I/MNY

Microchip Technology

93AA46CT-I/MNY by Microchip Technology is a 1024-bit EEPROM with 64x16 organization, operating at 5V. It features serial interface, software write protection, and industrial temperature grade. Ideal for applications requiring small outline package, such as automotive electronics and industrial controls.

8

3 MHz

200

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

1024 bit

EEPROM

16

1

1

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

TOTEM POLE

PLASTIC/EPOXY

SON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

YES

NO

TS 16949

MICROWIRE

.000001 Amp

EEPROMs

2 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

SOFTWARE

CAT93C46RVI-G by Onsemi

CAT93C46RVI-G

Onsemi

CAT93C46RVI-G by Onsemi is a 1024-bit EEPROM with 64x16 organization, operating at up to 2MHz clock frequency. It has a supply voltage range of 1.8V to 5.5V and operates in industrial temperature grade. Ideal for applications requiring small outline package, serial communication via Microwire, and low power consumption.

8

2 MHz

R-PDSO-G8

e4

4.9 mm

1024 bit

EEPROM

16

1

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

MICROWIRE

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

CAT93C76VI-G by Onsemi

CAT93C76VI-G

Onsemi

CAT93C76VI-G by Onsemi is a 8192-bit EEPROM with 512x16 organization, operating at 1MHz clock frequency. It has a serial bus type of MICROWIRE and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring small outline package and low power consumption.

8

1 MHz

R-PDSO-G8

e4

4.9 mm

8192 bit

EEPROM

16

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X16

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

1.75 mm

MICROWIRE

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

3.9 mm

TC58NVG2S0FTA00 by Toshiba

TC58NVG2S0FTA00

Toshiba

EEPROM; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

R-PDSO-G48

18.4 mm

4294967296 bit

EEPROM

8

1

48

536870912 words

512M

ASYNCHRONOUS

70 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

12 mm