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SRI512-W4/1GE

STMicroelectronics

SRI512-W4/1GE by STMicroelectronics

SRI512-W4/1GE by STMicroelectronics is a 512-bit EEPROM with 32x16 organization, operating at 3V. It features asynchronous mode, serial interface, and -20 to 85 °C temperature range. Ideal for applications requiring non-volatile memory storage in compact electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,881 parts In-Stock

1+ parts

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5,881

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Anansix

USA . 1,429 parts In-Stock

1+ parts

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1,429

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Digiode

USA . 438 parts In-Stock

1+ parts

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438

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,440 parts In-Stock

1+ parts

$4.730

100+ parts

-

1k+ parts

$4.257

10k+ parts

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1,440

$4.730

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$4.257

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MKK Technologies

India . 1,271 parts In-Stock

1+ parts

$8.894

100+ parts

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1,271

$8.894

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DigiPath Technology Company

USA . 1,271 parts In-Stock

1+ parts

$8.894

100+ parts

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1,271

$8.894

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AZTECH Wire

Italy . 1,113 parts In-Stock

1+ parts

$21.570

100+ parts

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1,113

$21.570

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Corphita

USA . 3,116 parts In-Stock

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3,116

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Parana Technologies

USA . 1,613 parts In-Stock

1+ parts

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100+ parts

$5.655

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1,613

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$5.655

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Overview

Unlock the power of reliable data storage with the SRI512-W4/1GE by STMicroelectronics. As a leader in semiconductor manufacturing, STMicroelectronics ensures top-notch quality and performance. This EEPROM chip offers seamless integration with its surface mount design and asynchronous operating mode. Ideal for a wide range of applications, this chip provides customers with a convenient and efficient solution for storing essential data. Experience the value and benefits of STMicroelectronics' SRI512-W4/1GE for your next project.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and convenient installation onto circuit boards, saving space and enabling efficient assembly processes.

Operating Mode: ASYNCHRONOUS

Enables independent operations without the need for synchronization, offering flexibility in data retrieval and storage.

Nominal Supply Voltage / Vsup (V): 3

Operates efficiently at a standard voltage level, ensuring compatibility with common power sources.

Package Style (Meter): UNCASED CHIP

Offers a compact and lightweight design, ideal for applications where size and weight are important factors.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for use in environments with elevated heat levels.

Organization: 32X16

Provides a good balance between memory capacity and data processing capabilities, suitable for various applications.

Minimum Operating Temperature: -20 °C

Functions reliably even in cold temperatures, making it versatile for use in different climate conditions.

Terminal Position: UPPER

Facilitates easy access to terminals for connections, simplifying integration into electronic systems.

Minimum Supply Voltage (Vsup): 2.5 V

Can operate at lower voltage levels, offering energy efficiency and compatibility with a wider range of power sources.

Programming Voltage (V): 3

Uses a standard programming voltage, ensuring ease of programming and compatibility with existing systems.

Technology: CMOS

Utilizes CMOS technology for efficient power consumption and reliable performance, extending the product's lifespan.

Parallel or Serial: SERIAL

Serial communication allows for sequential data transfer, enabling simple integration and data exchange with other devices.

Terminal Form: NO LEAD

Lead-free terminal form aligns with environmental standards and regulations, promoting sustainability and eco-friendliness.

No. of Words: 32 words

Offers a moderate storage capacity, suitable for storing essential data or program code in various electronic devices.

Memory Width: 16

Provides a balance between data storage capacity and data transfer speed, ensuring efficient processing of information.

Maximum Supply Voltage (Vsup): 3.5 V

Can handle higher voltage levels within a safe limit, ensuring reliability and protection against voltage spikes.

Maximum Write Cycle Time (tWC): 5 ms

Fast write cycle time allows for quick data storage and retrieval, enhancing overall system performance.

Memory Density: 512 bit

Offers sufficient memory density for storing critical data or code, suitable for a wide range of applications.

Memory IC Type: EEPROM

Uses EEPROM technology for non-volatile data storage, retaining data even when power is disconnected, making it reliable for data retention.

Technical Specifications

EEPROM SRI512-W4/1GE attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

JESD-30 Code:

X-XUUC-N

Memory Density:

512 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Words:

32 words

No. of Words Code:

32

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

32X16

Package Body Material:

UNSPECIFIED

Package Code:

DIE

Package Shape:

Package Style (Meter):

UNCASED CHIP

Parallel or Serial:

SERIAL

Programming Voltage (V):

3

Maximum Supply Voltage (Vsup):

3.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

SRI512-W4/1GE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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