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CAT24C512ZI-T3

Onsemi

CAT24C512ZI-T3 by Onsemi

CAT24C512ZI-T3 by Onsemi is a 64KX8 EEPROM with 524288 bit memory density. It operates at 0.4 MHz clock frequency and has 1000000 Write/Erase Cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Vyrian

USA . 11,692 parts In-Stock

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Dan-Mar Components

USA . 686 parts In-Stock

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Chip Stock

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Bristol Electronics

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Digiode

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Native Components

USA . 350 parts In-Stock

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$1.753

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Northwest PG Solutions

USA . 1,400 parts In-Stock

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$1.928

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Advanced Electronics

New Zealand . 300 parts In-Stock

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$4.057

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$3.692

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$3.327

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$4.057

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Corohmni

South Africa . 179 parts In-Stock

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$4.107

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AZTECH Wire

Italy . 1,056 parts In-Stock

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Perfect Parts

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Kulean Microsystems

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Kepictronics

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Problanco Electronics

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Corphita

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SupplyDigital Components

Austria . 763 parts In-Stock

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UHIMA Technologies

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Microchip USA

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Robosynatics

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Lucentia Tech

USA . 100 parts In-Stock

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$3.602

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TANS Electronics

Latvia . 83 parts In-Stock

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Overview

Unlock the power of reliable and high-quality memory storage with the CAT24C512ZI-T3 EEPROM by Onsemi. Designed to meet industrial standards, this EEPROM offers 64KX8 organization and 524288 bits of memory density for seamless data storage. With a durable plastic/epoxy package body material and a wide operating temperature range, this EEPROM is perfect for a variety of applications. Trust in Onsemi's reputation for excellence and experience the value and benefits of this versatile and efficient product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy integration into circuit boards, saving space and facilitating automated assembly processes.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures compatibility with a wide range of devices and systems.

No. of Terminals: 8

Having 8 terminals provides sufficient connectivity options while keeping the design simple and compact.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, the EEPROM can function reliably in harsh environments without any performance degradation.

Organization: 64KX8

The 64KX8 organization means that the EEPROM can store a large amount of data in a well-structured manner, making it efficient for data storage applications.

Technology: CMOS

Utilizing CMOS technology ensures low power consumption and high noise immunity, making the EEPROM energy-efficient and reliable.

Endurance: 1000000 Write/Erase Cycles

With a high endurance of 1,000,000 write/erase cycles, the EEPROM is long-lasting and can handle frequent data read/write operations without degradation.

Technical Specifications

EEPROM CAT24C512ZI-T3 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Reverse Pinout:

NO

Maximum Seated Height:

1.1 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000002 Amp

Maximum Supply Current:

2.5 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

CAT24C512ZI-T3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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