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24AA64T-E/SN

Microchip Technology

24AA64T-E/SN by Microchip Technology

24AA64T-E/SN by Microchip Tech is an 8KX8 EEPROM with 65536-bit memory density. Operating at 4.5V, it offers a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for automotive applications due to AEC-Q100 screening level and -40 to 125°C operating temperature range.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,443 parts In-Stock

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VNN

France . 3,010 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 60 parts In-Stock

1+ parts

$2.536

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60

$2.536

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Corohmni

South Africa . 506 parts In-Stock

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$5.589

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506

$5.589

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AZTECH Wire

Italy . 684 parts In-Stock

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$7.779

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684

$7.779

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Ampacity Inc.

Singapore . 922 parts In-Stock

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$12.000

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922

$12.000

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Lixinc

USA . 8,354 parts In-Stock

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8,354

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West Coast Incorporated

USA . 4,515 parts In-Stock

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Continental Prestige Electronics

USA . 3,040 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 504 parts In-Stock

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Overview

Unlock endless possibilities with the 24AA64T-E/SN EEPROM by Microchip Technology. This high-quality memory IC offers unparalleled reliability, endurance, and performance, making it perfect for automotive applications and beyond. With a wide operating temperature range and hardware write protection, this EEPROM ensures your data is safe and secure. Experience the value of quality craftsmanship and cutting-edge technology with the 24AA64T-E/SN today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures the longevity and reliability of the product.

Surface Mount: YES

Allows for easy and convenient installation on a surface, saving space and reducing assembly time.

Screening Level: AEC-Q100

Certified automotive-grade quality ensures high performance and reliability in harsh environments.

Nominal Supply Voltage / Vsup (V): 4.5

Optimal supply voltage for efficient operation and performance.

Memory Density: 65536 bit

Sufficient memory capacity for storing data and information effectively.

Endurance: 1000000 Write/Erase Cycles

High endurance ensures longevity and reliability of the product for repeated read/write operations.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise and coordinated data transfer, improving overall system efficiency.

Maximum Operating Temperature: 125 °C

High temperature tolerance makes it suitable for automotive and industrial applications.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows for reliable performance in extreme conditions.

Output Characteristics: OPEN-DRAIN

Open-drain output configuration ensures compatibility with various systems and devices.

Technical Specifications

EEPROM 24AA64T-E/SN attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.23

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5

Programming Voltage (V):

4.5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24AA64T-E/SN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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