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24AA64-I/SNG

Microchip Technology

24AA64-I/SNG by Microchip Technology

24AA64-I/SNG by Microchip Technology is an 8KX8 EEPROM with a memory density of 65536 bit. It operates in synchronous mode at a max clock frequency of 0.4 MHz and has a write protection feature for hardware security. Ideal for industrial applications requiring reliable data storage with endurance of 1000000 Write/Erase Cycles.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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VNN

France . 2,577 parts In-Stock

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Vyrian

USA . 965 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Semi Source

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Ampacity Inc.

Singapore . 1,393 parts In-Stock

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$1.000

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Corohmni

South Africa . 13 parts In-Stock

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$2.108

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Advanced Electronics

New Zealand . 75 parts In-Stock

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$2.347

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$2.230

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75

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Aztec Data Supply Inc.

USA . 1,401 parts In-Stock

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$5.130

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AZTECH Wire

Italy . 889 parts In-Stock

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$14.230

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Semicontronic

India . 1,364 parts In-Stock

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$17.000

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$16.575

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$16.490

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$17.000

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QualityLine Systems

Poland . 4,946 parts In-Stock

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Continental Prestige Electronics

USA . 2,373 parts In-Stock

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Bastille Electronics

Australia . 900 parts In-Stock

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Argo Parts USA

USA . 790 parts In-Stock

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Marpe Global Electronics

Taiwan . 789 parts In-Stock

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XL Components Corporation

Australia . 711 parts In-Stock

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Overview

Unlock endless possibilities with the 24AA64-I/SNG by Microchip Technology. This high-quality EEPROM offers unparalleled reliability and performance, making it ideal for a wide range of applications. With its compact design and advanced features, this product is a game-changer in data storage solutions. Trust Microchip Technology for cutting-edge technology that delivers value and innovation to customers worldwide. Elevate your projects with the 24AA64-I/SNG and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the EEPROM, making it a reliable choice for long-term use.

Nominal Supply Voltage / Vsup (V): 2.5

The nominal supply voltage of 2.5V offers efficient power consumption and stable operation for the EEPROM.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this EEPROM can perform reliably in various environmental conditions.

Memory Density: 65536 bit

The high memory density of 65536 bits allows for storing a large amount of data in a compact EEPROM, ideal for applications requiring high data storage capacity.

Endurance: 1000000 Write/Erase Cycles

The EEPROM's high endurance of 1,000,000 write/erase cycles ensures data reliability and longevity, suitable for frequent read/write operations.

Serial Bus Type: I2C

The I2C serial bus interface provides a simple and efficient way to communicate with the EEPROM, enabling easy integration into various systems.

Technical Specifications

EEPROM 24AA64-I/SNG attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

2/5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24AA64-I/SNG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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