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AT24C02C-SSHM-T-899

Microchip Technology

AT24C02C-SSHM-T-899 by Microchip Technology

AT24C02C-SSHM-T-899 by Microchip: 256x8 EEPROM with I2C control, 1MHz clock frequency, and 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

Median Price

$4.472

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 650 parts In-Stock

1+ parts

$4.472

100+ parts

$4.249

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$4.249

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650

$4.472

$4.249

$4.249

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,056 parts In-Stock

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VNN

France . 3,322 parts In-Stock

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3,322

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Nova Conductors

Japan . 43 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 457 parts In-Stock

1+ parts

$3.800

100+ parts

$3.705

1k+ parts

$3.686

10k+ parts

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457

$3.800

$3.705

$3.686

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Ampacity Inc.

Singapore . 205 parts In-Stock

1+ parts

$3.800

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205

$3.800

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Advanced Electronics

New Zealand . 650 parts In-Stock

1+ parts

$4.472

100+ parts

$4.249

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$4.249

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650

$4.472

$4.249

$4.249

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Corohmni

South Africa . 741 parts In-Stock

1+ parts

$5.611

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741

$5.611

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Aztec Data Supply Inc.

USA . 582 parts In-Stock

1+ parts

$5.746

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582

$5.746

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AZTECH Wire

Italy . 243 parts In-Stock

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$6.160

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243

$6.160

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RGB Technical Solutions

Ukraine . 5,423 parts In-Stock

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Continental Prestige Electronics

USA . 2,655 parts In-Stock

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Argo Parts USA

USA . 419 parts In-Stock

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419

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Robosynatics

Brazil . 150 parts In-Stock

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$0.695

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$0.695

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$0.695

150

-

$0.695

$0.695

$0.695

Lucentia Tech

USA . 150 parts In-Stock

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-

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$0.695

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$0.695

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$0.695

150

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$0.695

$0.695

$0.695

Bastille Electronics

Australia . 100 parts In-Stock

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100

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Overview

Upgrade your electronics with the AT24C02C-SSHM-T-899 by Microchip Technology, a high-quality EEPROM that ensures reliable performance and durability. Microchip Technology, a trusted manufacturer, offers a versatile product suitable for various applications. With features like hardware write protection and a wide operating temperature range, this EEPROM provides value and peace of mind to customers looking for a dependable memory solution. Trust in the innovation and expertise of Microchip Technology to enhance your devices with the AT24C02C-SSHM-T-899.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Nominal Supply Voltage / Vsup (V): 2.5

Operates at a low voltage, making it energy-efficient and suitable for portable devices.

Maximum Operating Temperature: 85 °C

Can withstand higher temperatures, making it suitable for industrial environments.

Memory Density: 2048 bit

Offers a high memory density, allowing for storage of a large amount of data in a compact size.

Endurance: 1000000 Write/Erase Cycles

Has a high endurance level, ensuring reliable and long-lasting performance for frequent read and write operations.

Serial Bus Type: I2C

Utilizes the I2C communication protocol for easy integration with other devices, enhancing its versatility and compatibility.

Technical Specifications

EEPROM AT24C02C-SSHM-T-899 attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

1 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

Length:

4.925 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.23

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Programming Voltage (V):

2.5

Maximum Seated Height:

1.75 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000006 Amp

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

AT24C02C-SSHM-T-899 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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