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CAT93C76VI-G

Onsemi

CAT93C76VI-G by Onsemi

CAT93C76VI-G by Onsemi is a 8192-bit EEPROM with 512x16 organization, operating at 1MHz clock frequency. It has a serial bus type of MICROWIRE and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring small outline package and low power consumption.

Median Price

$0.317

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 400 parts In-Stock

1+ parts

-

100+ parts

$0.317

1k+ parts

$0.263

10k+ parts

$0.235

400

-

$0.317

$0.263

$0.235

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 306 parts In-Stock

1+ parts

$0.247

100+ parts

-

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-

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306

$0.247

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Chip Stock

USA . 72,000 parts In-Stock

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72,000

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Vyrian

USA . 12,271 parts In-Stock

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12,271

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Distributors (Availability)

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Corphita

USA . 1,138 parts In-Stock

1+ parts

$0.234

100+ parts

-

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1,138

$0.234

-

-

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Corohmni

South Africa . 498 parts In-Stock

1+ parts

$0.260

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-

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498

$0.260

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Native Components

USA . 844 parts In-Stock

1+ parts

$10.552

100+ parts

-

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844

$10.552

-

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Northwest PG Solutions

USA . 2,357 parts In-Stock

1+ parts

$11.607

100+ parts

$10.446

1k+ parts

-

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2,357

$11.607

$10.446

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AZTECH Wire

Italy . 535 parts In-Stock

1+ parts

$16.960

100+ parts

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535

$16.960

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Kulean Microsystems

USA . 6,079 parts In-Stock

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6,079

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SupplyDigital Components

Austria . 5,520 parts In-Stock

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5,520

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Problanco Electronics

Mexico . 3,909 parts In-Stock

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3,909

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TANS Electronics

Latvia . 2,800 parts In-Stock

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2,800

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UHIMA Technologies

Türkiye . 743 parts In-Stock

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743

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Microchip USA

USA . 343 parts In-Stock

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343

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Overview

Unlock the power of reliable data storage with the CAT93C76VI-G EEPROM by Onsemi. This cutting-edge technology offers unparalleled quality and performance, ensuring seamless operation in a variety of applications. With its compact design and high-speed synchronous operation, this EEPROM is perfect for industrial use where durability and efficiency are key. Trust Onsemi's expertise in memory ICs to deliver a product that exceeds expectations, providing customers with unmatched value and peace of mind. Elevate your systems with the CAT93C76VI-G and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides durability and protection for the EEPROM, making it suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient PCB assembly, saving time and effort during the manufacturing process.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data transfers are synchronized with a clock signal, improving overall reliability and performance of the EEPROM.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V provides stable power delivery to the EEPROM, ensuring consistent performance.

Memory Density: 8192 bit

High memory density of 8192 bits allows for storage of large amounts of data in a compact EEPROM, making it efficient for various applications.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures the EEPROM can operate reliably in harsh environmental conditions, making it suitable for industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the EEPROM.

Serial Bus Type: MICROWIRE

Using the MICROWIRE serial bus type allows for simple and efficient communication with the EEPROM, enabling easy integration with other devices.

Technical Specifications

EEPROM CAT93C76VI-G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Alternate Memory Width:

8

Maximum Clock Frequency (fCLK):

1 MHz

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Maximum Seated Height:

1.75 mm

Serial Bus Type:

MICROWIRE

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

CAT93C76VI-G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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