Loading...

CAT93C46LE-G

Onsemi

CAT93C46LE-G by Onsemi

CAT93C46LE-G by Onsemi is an EEPROM with 64x16 organization, operating at 2MHz clock frequency. It has a memory density of 1024 bit and operates on a supply voltage range of 1.8V to 5.5V. Ideal for automotive applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 597 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

597

-

-

-

-

Vyrian

USA . 82 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

82

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 870 parts In-Stock

1+ parts

$8.325

100+ parts

-

1k+ parts

-

10k+ parts

-

870

$8.325

-

-

-

Northwest PG Solutions

USA . 836 parts In-Stock

1+ parts

$9.157

100+ parts

$8.242

1k+ parts

-

10k+ parts

-

836

$9.157

$8.242

-

-

Problanco Electronics

Mexico . 6,938 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,938

-

-

-

-

SupplyDigital Components

Austria . 4,458 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,458

-

-

-

-

TANS Electronics

Latvia . 3,995 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,995

-

-

-

-

Corphita

USA . 1,077 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,077

-

-

-

-

Kulean Microsystems

USA . 842 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

842

-

-

-

-

UHIMA Technologies

Türkiye . 477 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

477

-

-

-

-

Corohmni

South Africa . 345 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

345

-

-

-

-

Overview

Unlock endless possibilities with the CAT93C46LE-G EEPROM by Onsemi. Crafted with precision and innovation, this memory module is designed to exceed expectations in automotive applications. Experience seamless data storage and retrieval at up to 2MHz clock frequency, ensuring reliability and efficiency. With a durable plastic/epoxy package body and nickel palladium gold terminal finish, this EEPROM guarantees longevity and robust performance in any environment. Trust Onsemi for cutting-edge technology that delivers exceptional value and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material makes the product suitable for various environments.

Operating Mode: SYNCHRONOUS

Allows for synchronous communication with other devices, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement ensures compatibility with common power sources.

Maximum Operating Temperature: 125 °C

High operating temperature range makes it suitable for automotive and industrial applications.

Memory Density: 1024 bit

Offers a decent amount of memory space for storing data or firmware.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity.

Parallel or Serial: SERIAL

Serial interface allows for simple and efficient data transfer.

Minimum Data Retention Time: 100

Long data retention time ensures that important information is preserved even in low power situations.

Technical Specifications

EEPROM CAT93C46LE-G attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

100 YEAR DATA RETENTION

Alternate Memory Width:

8

Maximum Clock Frequency (fCLK):

2 MHz

Minimum Data Retention Time:

100

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e4

Length:

9.27 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Maximum Seated Height:

5.33 mm

Serial Bus Type:

MICROWIRE

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

CAT93C46LE-G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20