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CAT93C46HU4I-GT3

Onsemi

CAT93C46HU4I-GT3 by Onsemi

CAT93C46HU4I-GT3 by Onsemi is a 1024-bit EEPROM with 64x16 organization, operating at 2MHz clock frequency. It has a serial MICROWIRE bus type and operates in industrial temperature range (-40 to 85 °C). Suitable for applications requiring low power consumption and small footprint.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,519 parts In-Stock

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1,519

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Vyrian

USA . 418 parts In-Stock

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418

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Distributors (Availability)

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Native Components

USA . 594 parts In-Stock

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$18.080

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594

$18.080

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Northwest PG Solutions

USA . 1,213 parts In-Stock

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$19.888

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$17.899

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$19.888

$17.899

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Problanco Electronics

Mexico . 5,880 parts In-Stock

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5,880

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SupplyDigital Components

Austria . 1,250 parts In-Stock

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1,250

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Corphita

USA . 533 parts In-Stock

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533

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Corohmni

South Africa . 475 parts In-Stock

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475

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UHIMA Technologies

Türkiye . 241 parts In-Stock

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TANS Electronics

Latvia . 209 parts In-Stock

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Kulean Microsystems

USA . 158 parts In-Stock

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Overview

Unlock the power of reliable data storage with the CAT93C46HU4I-GT3 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality EEPROM products that are versatile and durable. This small outline memory IC is perfect for industrial applications, offering a wide operating temperature range and high clock frequency. With a serial bus type of MICROWIRE and a memory density of 1024 bit, this EEPROM provides efficient and secure data storage solutions. Trust Onsemi to provide you with the best technology for your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is durable and cost-effective, making the product suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and labor costs.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal voltage of 5V provides a stable power supply for reliable performance.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred and accessed efficiently, enhancing overall performance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the EEPROM can function reliably in a wide range of environments.

Technology: CMOS

CMOS technology offers low power consumption and high-speed performance, making the EEPROM energy-efficient and fast.

Serial Bus Type: MICROWIRE

Using the Microwire serial bus type enables efficient communication and data transfer, enhancing the overall functionality of the EEPROM.

Memory Density: 1024 bit

High memory density allows for storing a large amount of data in a compact EEPROM chip, making it suitable for a variety of applications.

Technical Specifications

EEPROM CAT93C46HU4I-GT3 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

100 YEAR DATA RETENTION

Alternate Memory Width:

8

Maximum Clock Frequency (fCLK):

2 MHz

Minimum Data Retention Time:

100

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Length:

3 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64X16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Maximum Seated Height:

.55 mm

Serial Bus Type:

MICROWIRE

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

2 mm

Trade Compliance

CAT93C46HU4I-GT3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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