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M95080-DWDW4TP/K

STMicroelectronics

M95080-DWDW4TP/K by STMicroelectronics

STMicroelectronics M95080-DWDW4TP/K is an AEC-Q100 EEPROM with 1KX8 organization, operating at -40 to 145 °C. It features a serial SPI interface, 10 MHz clock frequency, and 8192-bit memory density. Ideal for automotive applications requiring reliable non-volatile data storage in a compact 0.65 mm pitch package.

Median Price

$0.912

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 638 parts In-Stock

1+ parts

$0.912

100+ parts

-

1k+ parts

-

10k+ parts

-

638

$0.912

-

-

-

Vyrian

USA . 11,451 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,451

-

-

-

-

Anansix

USA . 96 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

96

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 962 parts In-Stock

1+ parts

$0.864

100+ parts

-

1k+ parts

-

10k+ parts

-

962

$0.864

-

-

-

IDEA Electronic Components Group

UK . 1,315 parts In-Stock

1+ parts

$3.839

100+ parts

-

1k+ parts

$3.455

10k+ parts

-

1,315

$3.839

-

$3.455

-

Microchip USA

USA . 5,917 parts In-Stock

1+ parts

$4.249

100+ parts

-

1k+ parts

-

10k+ parts

-

5,917

$4.249

-

-

-

MKK Technologies

India . 1,102 parts In-Stock

1+ parts

$7.219

100+ parts

-

1k+ parts

-

10k+ parts

-

1,102

$7.219

-

-

-

DigiPath Technology Company

USA . 1,102 parts In-Stock

1+ parts

$7.219

100+ parts

-

1k+ parts

-

10k+ parts

-

1,102

$7.219

-

-

-

AZTECH Wire

Italy . 610 parts In-Stock

1+ parts

$13.030

100+ parts

-

1k+ parts

-

10k+ parts

-

610

$13.030

-

-

-

Parana Technologies

USA . 1,510 parts In-Stock

1+ parts

-

100+ parts

$4.590

1k+ parts

-

10k+ parts

-

1,510

-

$4.590

-

-

Overview

Unlock the power of reliable data storage and retrieval with the M95080-DWDW4TP/K EEPROM by STMicroelectronics. With a focus on quality and innovation, STMicroelectronics continues to set the standard in the industry. This versatile product is ideal for automotive applications, ensuring seamless operation even in extreme temperatures. Experience the value and benefits that this compact, high-performance memory solution brings to your projects. Embrace the future of technology with STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the EEPROM chip, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Allows for easy and efficient mounting on PCBs, saving space and simplifying assembly.

Screening Level: AEC-Q100

Ensures that the EEPROM meets automotive industry standards for quality and reliability.

Operating Mode: SYNCHRONOUS

Enables data to be transferred quickly and efficiently, improving overall performance.

No. of Terminals: 8

Provides necessary connections for data input/output, power, and control signals.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Facilitates space-saving design in automotive applications where size constraints may be a concern.

Maximum Operating Temperature: 145 °C

Allows the EEPROM to operate reliably in high-temperature environments, preventing data loss or corruption.

Organization: 1KX8

Provides a total storage capacity of 1K words with a width of 8 bits per word.

Minimum Operating Temperature: -40 °C

Ensures reliable performance in cold temperatures, making the EEPROM suitable for automotive use in various climates.

Terminal Position: DUAL

Supports efficient data transfer and communication between the EEPROM and other components in the system.

Technical Specifications

EEPROM M95080-DWDW4TP/K attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

10 MHz

JESD-30 Code:

R-PDSO-G8

Length:

4.4 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

145 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

4 ms

Trade Compliance

M95080-DWDW4TP/K Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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