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M95010-DW3G/S

STMicroelectronics

M95010-DW3G/S by STMicroelectronics

M95010-DW3G/S from STMicroelectronics is a 1024-bit EEPROM with a 5 MHz SPI interface, ideal for automotive applications. It operates b/w -40 °C to 125 °C and features hardware/software write protection. Its compact SOIC package ensures efficient space utilization in designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 4,612 parts In-Stock

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Vyrian

USA . 1,732 parts In-Stock

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Anansix

USA . 1,568 parts In-Stock

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1,568

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IDEA Electronic Components Group

UK . 323 parts In-Stock

1+ parts

$2.181

100+ parts

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$1.963

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323

$2.181

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$1.963

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MKK Technologies

India . 1,591 parts In-Stock

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$4.102

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$4.102

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DigiPath Technology Company

USA . 1,591 parts In-Stock

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$4.102

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1,591

$4.102

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Parana Technologies

USA . 2,134 parts In-Stock

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$2.608

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$2.608

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Corphita

USA . 59 parts In-Stock

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Overview

Unlock unparalleled reliability with the M95010-DW3G/S EEPROM from STMicroelectronics, a trusted leader in semiconductor innovation. Designed for automotive applications, this compact memory solution delivers robust performance even in extreme temperatures. Enjoy seamless integration with its thin profile and dual terminal design, ensuring easy mounting and exceptional durability. Elevate your projects with superior data retention and agile write capabilities, enhancing efficiency and longevity for your systems.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers good durability and protection, making this EEPROM suitable for various applications.

Surface Mount: YES

The surface mount design allows for more compact circuit designs and improved performance in space-constrained applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB and ensures efficient layout in electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation simplifies data management, allowing for faster and easier interactions with the device.

Nominal Supply Voltage / Vsup: 5 V

With a standard nominal voltage of 5 V, this EEPROM can be easily integrated into common electronic systems.

Power Supplies (V): 5

Supports a uniform power supply, enhancing compatibility with existing circuits and reducing design complexity.

No. of Terminals: 8

The 8-terminal configuration provides a compact interface while offering sufficient connectivity for its functionalities.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline with a thin profile maximizes board space, making it ideal for small and portable electronic devices.

Maximum Operating Temperature: 125 °C

This EEPROM can function in high-temperature environments, suitable for automotive and industrial applications.

Organization: 128X8

The organization of 128x8 bits allows for efficient data management and retrieval, enhancing its usability in various applications.

Minimum Operating Temperature: -40 °C

With a wide operating temperature range, it can withstand harsh environments, ensuring reliability in extreme conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold finish provides excellent corrosion resistance and improves solderability for better performance.

Terminal Position: DUAL

The dual terminal position enables easier mounting and better connectivity options in complex layouts.

Write Protection: HARDWARE/SOFTWARE

Dual write protection methods safeguard data integrity, making it a secure choice for sensitive applications.

Maximum Seated Height: 1.2 mm

Low seated height promotes designs where space is a premium, enabling thinner and more compact devices.

Maximum Clock Frequency (fCLK): 5 MHz

A maximum clock frequency of 5 MHz allows for fast data processing and efficient communication.

Width: 3 mm

A narrow width ensures that the EEPROM can fit into tighter spaces while maintaining performance.

Minimum Supply Voltage (Vsup): 4.5 V

Operating at a minimum of 4.5 V makes it compatible with a variety of power supply systems.

Length: 4.4 mm

The compact length aids in the design of miniaturized devices without compromising on functionality.

Temperature Grade: AUTOMOTIVE

Automotive grade certification ensures robustness and longevity, making it suitable for vehicle applications.

Technology: CMOS

CMOS technology offers lower power consumption while maintaining high-speed performance, essential for modern electronics.

Parallel or Serial: SERIAL

Serial communication allows for simplified wiring and faster data transfer rates, which is beneficial for performance.

Terminal Form: GULL WING

Gull wing terminal form enhances soldering reliability and improves the mechanical connection to the PCB.

Maximum Supply Current: 3 mA

Low supply current requirements contribute to energy efficiency, ideal for battery-powered applications.

No. of Words: 128 words

Offers adequate storage capacity for many applications, balancing size and functionality.

Memory Width: 8

The 8-bit memory width is a standard configuration, facilitating easier integration with microcontrollers and other devices.

Minimum Data Retention Time: 40

A long data retention time ensures reliable storage of critical information, enhancing data integrity over time.

Terminal Pitch: 0.65 mm

A 0.65 mm terminal pitch supports tighter spacing on PCBs, accommodating current miniature design trends.

No. of Words Code: 128

The specification aligns with typical data storage needs in various electronic applications, promoting usability.

Maximum Supply Voltage (Vsup): 5.5 V

The ability to handle up to 5.5 V ensures compatibility with a wide range of power supply sources.

Endurance: 1000000 Write/Erase Cycles

High endurance significantly extends the lifespan of the EEPROM, making it a reliable option for frequent data updates.

Serial Bus Type: SPI

SPI interface enables high-speed data transfer and is widely supported, enhancing the overall integration capability.

Maximum Write Cycle Time (tWC): 5 ms

Fast write cycle times improve performance in applications requiring frequent data updates.

Memory Density: 1024 bit

Adequate memory density for moderate data storage, catering to various applications without taking up excessive space.

Memory IC Type: EEPROM

As an EEPROM, it combines non-volatility with rewrite capabilities, offering a versatile solution for diverse applications.

Maximum Standby Current: 0.000005 Amp

Extremely low standby current enhances energy efficiency, making it suitable for long-term operation in low-power devices.

Technical Specifications

EEPROM M95010-DW3G/S attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

5 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.4 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M95010-DW3G/S Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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