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M95010-BN3G/W

STMicroelectronics

M95010-BN3G/W by STMicroelectronics

M95010-BN3G/W by STMicroelectronics is a 1024-bit EEPROM with a synchronous operating mode and SPI serial bus type. It features a wide temperature range (-40 °C to 125 °C) and supports up to 1M write/erase cycles, making it ideal for automotive applications. With an in-line package and dual terminal position, it ensures reliable performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,117 parts In-Stock

1+ parts

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4,117

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Anansix

USA . 2,044 parts In-Stock

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2,044

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Digiode

USA . 215 parts In-Stock

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215

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,400 parts In-Stock

1+ parts

$2.930

100+ parts

-

1k+ parts

$2.637

10k+ parts

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1,400

$2.930

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$2.637

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MKK Technologies

India . 529 parts In-Stock

1+ parts

$5.510

100+ parts

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529

$5.510

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DigiPath Technology Company

USA . 529 parts In-Stock

1+ parts

$5.510

100+ parts

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529

$5.510

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Corphita

USA . 1,079 parts In-Stock

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1,079

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Parana Technologies

USA . 980 parts In-Stock

1+ parts

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$3.504

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980

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$3.504

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Overview

Unlock the power of reliable, high-performance data storage with the M95010-BN3G/W EEPROM from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics offers a robust solution designed for automotive applications, ensuring durability in extreme temperatures. Enjoy seamless synchronization, write protection features, and industry-leading endurance—empowering your projects with efficiency and peace of mind. Elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures protection against environmental factors, making the EEPROM suitable for various applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCBs, facilitating easy integration into designs.

Operating Mode: SYNCHRONOUS

Synchronous operation enables faster data transfer rates, improving performance in high-speed applications.

Nominal Supply Voltage / Vsup: 5V

Standard operating voltage is common in many applications, allowing for easy compatibility with existing systems.

Power Supplies: 5V

Compatible power requirements simplify design and reduce potential voltages mismatch issues.

No. of Terminals: 8

A compact terminal count ensures a small footprint, making it ideal for space-constrained designs.

Package Style (Meter): IN-LINE

In-line packaging allows for straightforward assembly and easier handling during production.

Maximum Operating Temperature: 125 °C

This high temperature tolerance makes the EEPROM suitable for automotive applications and harsh environments.

Organization: 128X8

This specific memory organization balances capacity and simplicity, ideal for various data storage needs.

Minimum Operating Temperature: -40 °C

Wide temperature range enhances reliability in extreme conditions, particularly in automotive and industrial applications.

Terminal Finish: MATTE TIN

The matte tin finish ensures good solderability, promoting reliable connections and reducing manufacturing issues.

Terminal Position: DUAL

Dual terminal positions provide flexibility in design for different layout options on PCBs.

Write Protection: HARDWARE/SOFTWARE

Robust write protection methods help safeguard data integrity, making it suitable for critical applications.

Maximum Seated Height: 5.33 mm

Low height maximizes space efficiency on PCBs while maintaining compatibility with various designs.

Maximum Clock Frequency (fCLK): 5 MHz

A 5 MHz clock frequency allows for reasonable data throughput, meeting the needs for many applications.

Width: 7.62 mm

This compact width facilitates space-saving designs and efficient layout on circuit boards.

Minimum Supply Voltage (Vsup): 4.5V

A minimum voltage requirement that's easily achievable in standard designs increases usability.

Length: 9.27 mm

Short length contributes to compact design, allowing for integration into tight spaces.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive standards, ensuring reliability and performance within vehicular electronics.

Technology: CMOS

CMOS technology ensures low power consumption, ideal for energy-efficient applications.

Parallel or Serial: SERIAL

Serial communication allows for simpler connections and reduced pin count, making it easier to interface with microcontrollers.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mounting capabilities, enhancing mechanical stability in various applications.

Maximum Supply Current: 3 mA

Low supply current ensures energy efficiency, making it suitable for battery-powered devices.

No. of Words: 128 words

Ample word count enables storage of sufficient data for a variety of applications.

Memory Width: 8

8-bit memory width is suitable for various standard applications, providing an adequate data bus size.

Minimum Data Retention Time: 40 years

Exceptional data retention time offers peace of mind for long-term storage requirements.

Terminal Pitch: 2.54 mm

Standard terminal pitch facilitates ease of integration with existing PCB designs and components.

No. of Words Code: 128

Offers flexibility in data handling, making it an ideal choice for a broad range of applications.

Maximum Supply Voltage (Vsup): 5.5V

Tolerance for higher supply voltages expands usability across different applications.

Endurance: 1,000,000 Write/Erase Cycles

High endurance ensures the EEPROM can be used in write-intensive applications without significant wear.

Serial Bus Type: SPI

SPI communication allows for high-speed data transfer and is widely used in embedded systems.

Maximum Write Cycle Time (tWC): 5 ms

Fast write cycle time enhances performance in applications that require quick data writing capabilities.

Memory Density: 1024 bit

Sufficient memory density for various applications, balancing capacity and efficiency.

Memory IC Type: EEPROM

As an EEPROM, this memory type can be reprogrammed and retains data without power, making it versatile and efficient.

Maximum Standby Current: 0.000005 Amps

Minimal standby current ensures low power consumption, making it ideal for energy-sensitive applications.

Technical Specifications

EEPROM M95010-BN3G/W attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

5 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.27 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M95010-BN3G/W Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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