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M95010-DW3P/G

STMicroelectronics

M95010-DW3P/G by STMicroelectronics

M95010-DW3P/G by STMicroelectronics is a 1024-bit EEPROM with a 5 MHz SPI interface, ideal for automotive applications. It operates b/w -40 °C to 125 °C and features hardware/software write protection. This compact, surface-mount device ensures reliable data retention with up to 1M write/erase cycles.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,377 parts In-Stock

1+ parts

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3,377

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Digiode

USA . 2,958 parts In-Stock

1+ parts

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2,958

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Anansix

USA . 1,387 parts In-Stock

1+ parts

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1,387

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 284 parts In-Stock

1+ parts

$2.398

100+ parts

-

1k+ parts

$2.159

10k+ parts

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284

$2.398

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$2.159

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MKK Technologies

India . 1,689 parts In-Stock

1+ parts

$4.510

100+ parts

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1,689

$4.510

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DigiPath Technology Company

USA . 1,689 parts In-Stock

1+ parts

$4.510

100+ parts

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1,689

$4.510

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Parana Technologies

USA . 2,202 parts In-Stock

1+ parts

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100+ parts

$2.868

1k+ parts

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2,202

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$2.868

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Corphita

USA . 170 parts In-Stock

1+ parts

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170

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Overview

Unlock the potential of your designs with the M95010-DW3P/G EEPROM from STMicroelectronics, a leader in innovative semiconductor solutions. This compact, high-quality memory chip is engineered for reliability in automotive applications, ensuring durability across extreme temperatures. With robust write protection and impressive endurance, it delivers exceptional performance, giving you peace of mind and confidence as you enhance your products with cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body provides durability and resistance to environmental factors, ensuring reliable performance in various applications.

Surface Mount: YES

Surface mount technology allows for compact design and easier integration into modern printed circuit boards.

Package Shape: RECTANGULAR

The rectangular shape enables efficient use of board space, facilitating high-density designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation simplifies system design and allows for flexible timing in data communication.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage is standard in many applications, making it easy to integrate into existing systems.

Power Supplies (V): 5

This consistent power supply requirement ensures compatibility with various electronics and reduces design complexity.

No. of Terminals: 8

Having 8 terminals allows for straightforward connections and integration into circuit designs.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline and thin profile make it ideal for space-constrained applications, enhancing versatility.

Maximum Operating Temperature: 125 °C

With a high operating temperature limit, this EEPROM is suitable for automotive and other high-temperature environments.

Organization: 128X8

This organization provides efficient data structure, allowing for straightforward data access and manipulation.

Minimum Operating Temperature: -40 °C

The operational temperature range makes this product ideal for extreme environments, such as automotive applications.

Terminal Finish: NICKEL PALLADIUM GOLD

This terminal finishing ensures excellent solderability and corrosion resistance, thus enhancing reliability.

Terminal Position: DUAL

Dual-terminal positioning allows for better stability and connection reliability during assembly.

Write Protection: HARDWARE/SOFTWARE

The combination of hardware and software write protection offers enhanced data security, vital for sensitive applications.

Maximum Seated Height: 1.2 mm

The low seated height allows for a slim profile, facilitating height-constrained applications in compact designs.

Maximum Clock Frequency (fCLK): 5 MHz

Operating at 5 MHz enables fast data transfer rates, contributing to improved overall system performance.

Width: 3 mm

A narrow width allows for high-density board layouts, optimizing the design of electronic devices.

Minimum Supply Voltage (Vsup): 4.5 V

With a minimum supply voltage requirement of 4.5V, it is versatile for various operational scenarios.

Length: 4.4 mm

The compact length aids in shrinking the overall footprint of electronic designs.

Temperature Grade: AUTOMOTIVE

Rated for automotive applications ensures reliability and performance under stressful conditions.

Technology: CMOS

CMOS technology offers low power consumption and high density, making it ideal for portable devices.

Parallel or Serial: SERIAL

Serial communication allows for reduced pin count and simplified circuit design.

Terminal Form: GULL WING

Gull wing terminals provide ease of soldering and excellent mechanical strength, enhancing robustness.

Maximum Supply Current: 3 mA

Low supply current ensures energy efficiency, prolonging the battery life in portable applications.

No. of Words: 128 words

The ability to store 128 words makes it suitable for many applications requiring moderate data storage.

Memory Width: 8

An 8-bit memory width allows for efficient data handling suited to many common data formats.

Minimum Data Retention Time: 40

A minimum data retention time of 40 years provides assurance of data longevity and reliability.

Terminal Pitch: 0.65 mm

A small terminal pitch aids in densely packed designs, making it easier to optimize PCB real estate.

No. of Words Code: 128

The flexibility in data storage reflects versatility in applications ranging from automotive to consumer electronics.

Maximum Supply Voltage (Vsup): 5.5 V

The operational range up to 5.5V offers the flexibility for various powered devices without compromise.

Endurance: 1000000 Write/Erase Cycles

The high endurance rate allows for extensive use in applications that require frequent data updates, ensuring long-lasting performance.

Serial Bus Type: SPI

The SPI serial bus type allows for fast data transfer and straightforward integration into various systems.

Maximum Write Cycle Time (tWC): 5 ms

Fast write cycle time enhances overall system efficiency, making it suitable for time-sensitive applications.

Memory Density: 1024 bit

1024-bit memory density strikes a balance between size and capacity, ideal for simple data storage needs.

Memory IC Type: EEPROM

As an EEPROM, it retains data without power, making it perfect for configurations and settings storage.

Maximum Standby Current: 0.000005 Amp

Extremely low standby current ensures minimal power consumption in idle modes, benefiting battery-operated devices.

Technical Specifications

EEPROM M95010-DW3P/G attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

5 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.4 mm

Memory Density:

1024 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

128 words

No. of Words Code:

128

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000005 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

M95010-DW3P/G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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