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AT28LV010-20JU-235

Microchip Technology

AT28LV010-20JU-235 by Microchip Technology

AT28LV010-20JU-235 by Microchip is a 128Kx8 EEPROM with 3.3V supply, 200ns access time, and 100000 write/erase cycles. It is used in industrial applications for non-volatile memory storage due to its high endurance and parallel interface.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,042 parts In-Stock

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8,042

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VNN

France . 2,940 parts In-Stock

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2,940

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Corohmni

South Africa . 372 parts In-Stock

1+ parts

$3.246

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372

$3.246

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Aztec Data Supply Inc.

USA . 291 parts In-Stock

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$3.773

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291

$3.773

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Ampacity Inc.

Singapore . 1,454 parts In-Stock

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$9.000

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$9.000

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AZTECH Wire

Italy . 725 parts In-Stock

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$18.261

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725

$18.261

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Semicontronic

India . 1,320 parts In-Stock

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$23.000

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$22.425

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$22.310

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$23.000

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$22.310

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QUARKTWIN TECHNOLOGY LTD

USA . 26,452 parts In-Stock

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Fulton Briggs Corp.

USA . 7,647 parts In-Stock

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Continental Prestige Electronics

USA . 3,239 parts In-Stock

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Microchip USA

USA . 1,696 parts In-Stock

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Argo Parts USA

USA . 986 parts In-Stock

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986

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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Robosynatics

Brazil . 100 parts In-Stock

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$1.230

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$1.230

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Lucentia Tech

USA . 100 parts In-Stock

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$1.230

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$1.230

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$1.230

100

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$1.230

$1.230

$1.230

Overview

Unlock endless possibilities with the Microchip Technology AT28LV010-20JU-235 EEPROM. Manufactured by industry leader Microchip Technology, this high-quality chip offers unparalleled reliability and performance. Ideal for a wide range of applications, this EEPROM provides customers with valuable benefits such as fast access times, high endurance, and flexible write protection options. Trust in Microchip Technology to deliver top-notch products that meet your needs and exceed your expectations. Elevate your projects with the AT28LV010-20JU-235 and experience innovation at its finest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the EEPROM, ensuring it can withstand various environmental conditions.

Operating Mode: ASYNCHRONOUS

Allows for independent operation without the need for synchronization, providing flexibility and ease of use.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard voltage level, making it compatible with a wide range of applications.

Organization: 128KX8

Offers a high level of organization with a large memory capacity, allowing for efficient storage and retrieval of data.

Write Protection: HARDWARE/SOFTWARE

Allows for secure data storage with options for both hardware and software-based protection methods.

Endurance: 100000 Write/Erase Cycles

Ensures long-lasting performance with a high number of write/erase cycles, making it suitable for frequent data updates.

Technical Specifications

EEPROM AT28LV010-20JU-235 attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Access Time:

200 ns

Minimum Data Retention Time:

10

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

32

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.45X.55

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Maximum Seated Height:

3.556 mm

Maximum Standby Current:

.00005 Amp

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.43 mm

Maximum Write Cycle Time (tWC):

10 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

AT28LV010-20JU-235 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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