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M95080-WMN6TP/S

STMicroelectronics

M95080-WMN6TP/S by STMicroelectronics

M95080-WMN6TP/S by STMicroelectronics is an EEPROM with 1KX8 organization, SPI serial bus type, and 8192 bit memory density. It operates at a clock frequency of up to 10 MHz and has a max supply voltage of 5.5 V. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,104 parts In-Stock

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3,104

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Vyrian

USA . 1,119 parts In-Stock

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1,119

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Anansix

USA . 573 parts In-Stock

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573

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 949 parts In-Stock

1+ parts

$2.848

100+ parts

-

1k+ parts

$2.563

10k+ parts

-

949

$2.848

-

$2.563

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Corohmni

South Africa . 84 parts In-Stock

1+ parts

$3.078

100+ parts

-

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84

$3.078

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Ampacity Inc.

Singapore . 1,634 parts In-Stock

1+ parts

$4.000

100+ parts

-

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1,634

$4.000

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Aztec Data Supply Inc.

USA . 163 parts In-Stock

1+ parts

$4.630

100+ parts

-

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163

$4.630

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MKK Technologies

India . 1,773 parts In-Stock

1+ parts

$5.356

100+ parts

-

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1,773

$5.356

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DigiPath Technology Company

USA . 1,773 parts In-Stock

1+ parts

$5.356

100+ parts

-

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1,773

$5.356

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Semicontronic

India . 1,430 parts In-Stock

1+ parts

$6.000

100+ parts

$5.850

1k+ parts

$5.820

10k+ parts

-

1,430

$6.000

$5.850

$5.820

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AZTECH Wire

Italy . 552 parts In-Stock

1+ parts

$17.300

100+ parts

-

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552

$17.300

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Assy Fe

Spain . 30,000 parts In-Stock

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30,000

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Parana Technologies

USA . 2,133 parts In-Stock

1+ parts

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$3.406

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2,133

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$3.406

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Corphita

USA . 1,279 parts In-Stock

1+ parts

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1,279

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Argo Parts USA

USA . 400 parts In-Stock

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400

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Continental Prestige Electronics

USA . 50 parts In-Stock

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50

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Bastille Electronics

Australia . 21 parts In-Stock

1+ parts

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21

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Overview

Elevate your projects with the M95080-WMN6TP/S by STMicroelectronics. Known for their top-notch quality and reliability, STMicroelectronics brings you this EEPROM that is perfect for a wide range of applications. With its small outline package and dual terminal position, this memory IC offers high performance in industrial-grade environments. Experience the value and benefits of fast clock frequency, low write cycle time, and high memory density. Trust STMicroelectronics to deliver cutting-edge technology that meets your needs seamlessly.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material is lightweight and durable, making the EEPROM easy to handle and long-lasting.

Surface Mount:

YES - This feature allows for easy and secure installation on a circuit board, saving time and effort during assembly.

Package Shape:

RECTANGULAR - The rectangular shape makes it easy to fit the EEPROM into tight spaces on a PCB, maximizing design flexibility.

Operating Mode:

SYNCHRONOUS - Synchronous operation ensures precise and accurate data transfer, ideal for applications requiring real-time communication.

Nominal Supply Voltage (Vsup):

5V - The 5V supply voltage provides a stable power source for the EEPROM, ensuring reliable performance.

No. of Terminals:

8 - With 8 terminals, this EEPROM is easy to interface with other components, simplifying integration into a larger system.

Package Style (Meter):

SMALL OUTLINE - The small outline package saves space on the PCB, ideal for compact designs or applications with limited board area.

Maximum Operating Temperature:

85 °C - The wide operating temperature range makes this EEPROM suitable for use in industrial environments or harsh conditions.

Organization:

1KX8 - The 1KX8 organization allows for efficient storage and retrieval of data, optimizing memory usage.

Minimum Operating Temperature:

40 °C - The EEPROM can operate in extremely low temperatures, making it suitable for outdoor or automotive applications.

Terminal Finish:

NICKEL PALLADIUM GOLD - This finish provides excellent corrosion resistance and ensures reliable electrical connections, enhancing the overall lifespan of the EEPROM.

Terminal Position:

DUAL - The dual terminal position offers flexibility in PCB layout and component placement, making installation easier and more efficient.

Maximum Seated Height:

1.75 mm - The low seated height of the EEPROM allows for compact designs and facilitates airflow in the system, preventing overheating.

Maximum Clock Frequency (fCLK):

10 MHz - The high clock frequency enables fast data transfer speeds, ideal for applications requiring quick access to memory.

Width:

3.9 mm - The slim width of the EEPROM saves space on the PCB, making it suitable for compact or densely populated circuit boards.

Minimum Supply Voltage (Vsup):

2.5V - The low minimum supply voltage ensures compatibility with a wide range of systems and power sources.

Length:

4.9 mm - The compact length of the EEPROM allows for easy integration into tight spaces or small electronic devices.

Temperature Grade:

INDUSTRIAL - The industrial temperature grade ensures reliable operation in harsh environments or demanding applications.

Technology:

CMOS - The CMOS technology used in this EEPROM offers low power consumption and high noise immunity, making it energy-efficient and reliable.

Parallel or Serial:

SERIAL - The serial interface simplifies communication with other components, reducing the number of signals required and saving board space.

Terminal Form:

GULL WING - The gull wing terminal form provides secure mechanical connection and facilitates automated assembly processes, ensuring consistent quality.

No. of Words:

1024 words - The 1024-word capacity offers ample storage for data, addresses, or program codes, making the EEPROM versatile and adaptable.

Memory Width:

8 - The 8-bit memory width allows for efficient data storage and retrieval, ideal for applications requiring small chunks of data to be accessed quickly.

Terminal Pitch:

1.27 mm - The standard terminal pitch enables easy soldering and rework, ensuring a reliable electrical connection and smooth integration into the PCB.

No. of Words Code:

1K - The 1K word code simplifies addressing and access to memory locations, streamlining data storage and retrieval processes.

Maximum Supply Voltage (Vsup):

5.5V - The high maximum supply voltage tolerance provides a safety margin for voltage spikes or fluctuations, ensuring the EEPROM's stability in various operating conditions.

Serial Bus Type:

SPI - The SPI bus type offers fast data transfer rates and synchronous communication, making the EEPROM suitable for time-sensitive applications.

Maximum Write Cycle Time (tWC):

5 ms - The short write cycle time ensures quick and efficient programming of the EEPROM, ideal for applications requiring frequent data updates.

Memory Density:

8192 bit - The high memory density allows for storing a large amount of data in a small footprint, making the EEPROM efficient and cost-effective.

Memory IC Type:

EEPROM - As an Electrically Erasable Programmable Read-Only Memory, this product offers non-volatile data storage, allowing for easy data retention even when the power is turned off.

Technical Specifications

EEPROM M95080-WMN6TP/S attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

10 MHz

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Memory Density:

8192 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

M95080-WMN6TP/S Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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