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EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.

EEPROM

Available Parts 850

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
25AA1024-I/P by Microchip Technology

25AA1024-I/P

Microchip Technology

25AA1024-I/P by Microchip Technology is a 1MX1 EEPROM with 20 MHz clock frequency, SPI serial bus type. It operates at -40 to 85 °C, has 1000000 write/erase cycles endurance, and uses hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage.

OPERTAES WITH 2.5VMIN @ 10MHZ

20 MHz

200

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.271 mm

8388608 bit

EEPROM

8

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

AEC-Q100

5.334 mm

SPI

.000012 Amp

10 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

6 ms

HARDWARE/SOFTWARE

24LC65/P by Microchip Technology

24LC65/P

Microchip Technology

24LC65/P by Microchip Technology is an 8KX8 EEPROM with 1000000 Write/Erase Cycles. It operates at 0.1 MHz, has a memory density of 65536 bit, and uses I2C serial bus type. Ideal for applications requiring reliable non-volatile memory storage in commercial temperature grade environments.

.1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.46 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

70 Cel

0 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

5

Not Qualified

TS 16949

4.32 mm

I2C

.000005 Amp

EEPROMs

3 mA

6 V

2.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

24LC65T/SM by Microchip Technology

24LC65T/SM

Microchip Technology

24LC65T/SM by Microchip Technology is an EEPROM with 8KX8 organization, 1000000 Write/Erase Cycles endurance, and I2C serial bus type. It operates at 5V nominal voltage and is suitable for applications requiring small outline package style and synchronous operation.

.1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.28 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

70 Cel

0 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

TS 16949

2.03 mm

I2C

.000005 Amp

EEPROMs

3 mA

6 V

2.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

AT28C16-20JC by Atmel

AT28C16-20JC

Atmel

Atmel's AT28C16-20JC is a 2Kx8 EEPROM chip with 3-STATE output, operating at 5V. It offers 10000 Write/Erase cycles, 200ns access time, and supports asynchronous mode. Ideal for applications requiring reliable non-volatile memory storage in commercial temperature environments.

200 ns

AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS

NO

YES

10

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

16384 bit

EEPROM

8

2

1

32

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.55 mm

.0001 Amp

EEPROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

NO

11.43 mm

1 ms

AT28C16-20JI by Atmel

AT28C16-20JI

Atmel

Atmel's AT28C16-20JI is a 2Kx8 EEPROM with 10000 Write/Erase Cycles. Operating at 5V, it offers a max access time of 200ns and features an industrial temperature grade. Widely used in applications requiring non-volatile memory storage, this chip carrier package has a rectangular shape and supports asynchronous operation.

200 ns

AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS

NO

YES

10

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

16384 bit

EEPROM

8

2

1

32

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.55 mm

.0001 Amp

EEPROMs

45 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

NO

11.43 mm

1 ms

AT28C16-20SC by Atmel

AT28C16-20SC

Atmel

AT28C16-20SC by Atmel is a 2Kx8 EEPROM with 5V supply, 70°C max temp, and 200ns access time. Ideal for data storage in commercial applications due to its 10000 write/erase cycles endurance and parallel interface. Measuring 15.4mm x 7.5mm x 2.65mm, it features a small outline package with gull wing terminals for surface mounting.

200 ns

AUTOMATIC WRITE; 10K ENDURANCE WRITE CYCLES; DATA RETENTION = 10 YEARS

NO

YES

10

10000 Write/Erase Cycles

R-PDSO-G24

e0

15.4 mm

16384 bit

EEPROM

8

1

24

2048 words

2K

ASYNCHRONOUS

70 Cel

0 Cel

2KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP24,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.65 mm

.0001 Amp

EEPROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

7.5 mm

1 ms

AT28LV256-20JC by Atmel

AT28LV256-20JC

Atmel

Atmel's AT28LV256-20JC is a 32Kx8 EEPROM chip with 3.3V supply, 200ns access time, and 10ms write cycle time. Ideal for applications requiring non-volatile memory storage in commercial-grade devices.

200 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

262144 bit

EEPROM

8

2

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

3.3

3

Not Qualified

3.55 mm

.00002 Amp

EEPROMs

15 mA

3.465 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

11.43 mm

10 ms

AT28LV256-25PC by Atmel

AT28LV256-25PC

Atmel

EEPROM; Temperature Grade: COMMERCIAL; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Memory Width: 8;

250 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

36.95 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

3.3

3

Not Qualified

5.59 mm

.00002 Amp

EEPROMs

15 mA

3.465 V

3.135 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

AT28LV256-25PI by Atmel

AT28LV256-25PI

Atmel

AT28LV256-25PI by Atmel is a 32Kx8 EEPROM with a supply voltage of 3.3V, operating temperature range of -40 to 85°C, and endurance of 10,000 write/erase cycles. It is commonly used in industrial applications for storing data reliably.

250 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

36.95 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

3.3

3

Not Qualified

5.59 mm

.00005 Amp

EEPROMs

15 mA

3.465 V

3.135 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

24AA65/P by Microchip Technology

24AA65/P

Microchip Technology

24AA65/P by Microchip Technology is an 8KX8 EEPROM with 1000000 Write/Erase Cycles. It operates at 0.1 MHz with a supply voltage range of 1.8-6V, suitable for I2C serial bus applications in commercial temperature grade environments.

.1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.46 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

70 Cel

0 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

5

Not Qualified

TS 16949

4.32 mm

I2C

.000005 Amp

EEPROMs

3 mA

6 V

1.8 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

24C65/P by Microchip Technology

24C65/P

Microchip Technology

24C65/P by Microchip Technology is an EEPROM with a memory density of 65536 bit. It operates in synchronous mode and has a max clock frequency of 0.4 MHz. It is commonly used in applications that require non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.46 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

70 Cel

0 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

5

Not Qualified

TS 16949

4.32 mm

I2C

.000005 Amp

EEPROMs

3 mA

6 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

24C65/SM by Microchip Technology

24C65/SM

Microchip Technology

24C65/SM by Microchip Technology is an EEPROM with 8KX8 organization, operating at 5V. It features a max clock frequency of 0.4 MHz and offers 1000000 Write/Erase cycles endurance. Ideal for applications requiring reliable non-volatile memory storage in commercial-grade electronic devices.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.28 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

70 Cel

0 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

5

Not Qualified

TS 16949

2.03 mm

I2C

.000005 Amp

EEPROMs

3 mA

6 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

M24C16-WBN6 by STMicroelectronics

M24C16-WBN6

STMicroelectronics

STMicroelectronics M24C16-WBN6 is an 8-terminal EEPROM with 2Kx8 organization, operating at 5V. It features I2C control byte for synchronous operation and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact rectangular package.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDIP-T8

e0

9.27 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C16-BN6 by STMicroelectronics

M24C16-BN6

STMicroelectronics

STMicroelectronics M24C16-BN6 is an 8-terminal EEPROM with 2Kx8 organization, operating at 5V. It features a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact rectangular package.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDIP-T8

e0

9.27 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C16-WMN6T by STMicroelectronics

M24C16-WMN6T

STMicroelectronics

M24C16-WMN6T by STMicroelectronics is a 2Kx8 EEPROM with I2C control byte 1010MMMR. It operates at 5V, has 1000000 write/erase cycles, and supports a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G8

e0

4.9 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C16-WMN6 by STMicroelectronics

M24C16-WMN6

STMicroelectronics

The STMicroelectronics M24C16-WMN6 is an EEPROM with 2Kx8 organization, operating at 5V. It features a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G8

e0

4.9 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C16-MN6 by STMicroelectronics

M24C16-MN6

STMicroelectronics

The STMicroelectronics M24C16-MN6 is an EEPROM with 2Kx8 organization, operating at 5V. It features a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G8

e0

4.9 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C08-WBN6 by STMicroelectronics

M24C08-WBN6

STMicroelectronics

M24C08-WBN6 by STMicroelectronics is an EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 Write/Erase cycles endurance. It operates in synchronous mode with a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDIP-T8

e0

9.27 mm

8192 bit

EEPROM

8

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C08-WMN6T by STMicroelectronics

M24C08-WMN6T

STMicroelectronics

STMicroelectronics M24C08-WMN6T is a 1Kx8 EEPROM with I2C serial bus, 8192-bit memory density, and 1000000 write/erase cycles. It operates at -40 to 85 °C, has a max clock frequency of 0.4 MHz, and is used in industrial applications for hardware write protection.

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDSO-G8

e0

4.9 mm

8192 bit

EEPROM

8

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C08-WMN6 by STMicroelectronics

M24C08-WMN6

STMicroelectronics

STMicroelectronics M24C08-WMN6 is an EEPROM with 1KX8 organization, operating at 5V. It offers 1000000 Write/Erase cycles, I2C serial bus type, and a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDSO-G8

e0

4.9 mm

8192 bit

EEPROM

8

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

TH58NVG4S0FTA20 by Toshiba

TH58NVG4S0FTA20

Toshiba

Toshiba's TH58NVG4S0FTA20 EEPROM operates at 3.3V, with 48 terminals in a small outline package. It has a memory density of 17179869184 bits and is ideal for commercial applications requiring parallel operation with a programming voltage of 3V.

R-PDSO-G48

18.4 mm

17179869184 bit

EEPROM

8

1

48

2147483648 words

2G

ASYNCHRONOUS

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

12 mm

TH58NVG5S0FTA20 by Toshiba

TH58NVG5S0FTA20

Toshiba

Toshiba's TH58NVG5S0FTA20 EEPROM features 48 terminals, 3.3V supply voltage, and 70°C max temp. Ideal for commercial applications, it offers a memory density of 34359738368 bits in a small outline package with gull wing terminals.

R-PDSO-G48

18.4 mm

34359738368 bit

EEPROM

8

1

48

4294967296 words

4G

ASYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

12 mm

TH58NVG5S0FTAK0 by Toshiba

TH58NVG5S0FTAK0

Toshiba

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Organization: 4GX8;

R-PDSO-G48

18.4 mm

34359738368 bit

EEPROM

8

1

48

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

12 mm

LE24163LBXA-SH by Onsemi

LE24163LBXA-SH

Onsemi

LE24163LBXA-SH by Onsemi is a 2KX8 EEPROM with 16384 bit memory density. It operates at 2.5V, has a clock frequency of 0.4 MHz, and supports industrial temperature grade. Ideal for applications requiring low power consumption and reliable non-volatile memory storage in compact devices.

FOR WRITE OPERATION-1.8V TO 3.6V SUPPLY

.4 MHz

R-PBGA-B5

e1

1.2 mm

16384 bit

EEPROM

8

1

1

5

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

260

3

.33 mm

3.6 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

30

.8 mm

5 ms

24AA044-I/P by Microchip Technology

24AA044-I/P

Microchip Technology

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

1.7V TO 1.8V @ 0.1MHz AND 1.8V TO 2.2V @ 0.4MHz

1 MHz

200

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e3

9.271 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2.5

TS 16949

5.334 mm

I2C

.000001 Amp

3 mA

5.5 V

2.2 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

1.27 mm

DUAL

7.62 mm

5 ms

AT24C64-10PC by Atmel

AT24C64-10PC

Atmel

AT24C64-10PC by Atmel is an 8Kx8 EEPROM with a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. It operates on a 5V supply, has I2C serial bus type, and is commonly used in applications requiring non-volatile memory storage.

DATA RETENTION: 100 YEARS

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e0

9.59 mm

65536 bit

EEPROM

8

1

8

8192 words

8K

SYNCHRONOUS

70 Cel

0 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

5.33 mm

I2C

.000035 Amp

EEPROMs

3 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

HARDWARE

EPC1064VPC8 by Altera

EPC1064VPC8

Altera

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; JESD-609 Code: e0;

4 WIRE INTERFACE TO FLEX 8000 DEVICES

6 MHz

COMMON

R-PDIP-T8

e0

9.398 mm

65536 bit

CONFIGURATION MEMORY

1

1

1

8

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

220

3.3

Not Qualified

4.318 mm

OTP ROMs

3.6 V

3 V

3.3

NO

MOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

EPC1064VLC20 by Altera

EPC1064VLC20

Altera

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; JESD-609 Code: e0;

4 WIRE INTERFACE TO FLEX 8000 DEVICES

6 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

65536 bit

CONFIGURATION MEMORY

1

1

1

20

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

220

3.3

Not Qualified

4.572 mm

OTP ROMs

3.6 V

3 V

3.3

YES

MOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

8.9662 mm

EPC1064LI20 by Altera

EPC1064LI20

Altera

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 5.5 V;

4 WIRE INTERFACE TO FLEX 8000 DEVICES

4 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

65536 bit

CONFIGURATION MEMORY

1

1

1

20

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

220

5

Not Qualified

4.572 mm

OTP ROMs

5.5 V

4.5 V

5

YES

MOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

8.9662 mm

EPC1064VTC32 by Altera

EPC1064VTC32

Altera

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: LQFP; Package Shape: SQUARE; Terminal Pitch: .8 mm;

4 WIRE INTERFACE TO FLEX 8000 DEVICES

4 MHz

COMMON

S-PQFP-G32

e0

7 mm

65536 bit

CONFIGURATION MEMORY

1

3

1

32

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX1

3-STATE

PLASTIC/EPOXY

LQFP

TQFP32,.35SQ,32

SQUARE

FLATPACK, LOW PROFILE

220

3.3

Not Qualified

1.27 mm

OTP ROMs

3.6 V

3 V

3.3

YES

MOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

7 mm

AT28C256-15PC by Atmel

AT28C256-15PC

Atmel

AT28C256-15PC by Atmel is a 32KX8 EEPROM with 10000 Write/Erase Cycles. Operating at 5V, it offers a max access time of 150ns and features a memory density of 262144 bits. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

150 ns

AUTOMATIC WRITE

NO

YES

10

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

225

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0002 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

30

YES

15.24 mm

10 ms

AT28C256-15PI by Atmel

AT28C256-15PI

Atmel

AT28C256-15PI by Atmel is a 32KX8 EEPROM with 10000 Write/Erase Cycles. Operating at 5V, it offers a max access time of 150ns and endurance of 262144 bits. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

150 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

240

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0002 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

30

YES

15.24 mm

10 ms

AT28C256F-15PI by Atmel

AT28C256F-15PI

Atmel

AT28C256F-15PI by Atmel is a 32KX8 EEPROM with 10000 Write/Erase Cycles. It operates at 5V, has a page size of 64 words, and offers a max access time of 150 ns. Ideal for industrial applications requiring reliable non-volatile memory storage.

150 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0002 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

3 ms

AT28HC256-12PC by Atmel

AT28HC256-12PC

Atmel

AT28HC256-12PC by Atmel is a 32KX8 EEPROM with 3-STATE output, operating at 5V. It offers 10000 Write/Erase cycles, 120 ns access time, and supports data polling. Ideal for applications requiring reliable non-volatile memory storage in commercial temperature environments.

120 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0003 Amp

EEPROMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

AT28HC256-70PI by Atmel

AT28HC256-70PI

Atmel

AT28HC256-70PI by Atmel is a 32KX8 EEPROM with 3-STATE output, operating at 5V. It features a max access time of 70ns and can endure up to 10,000 Write/Erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

70 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

MIL-STD-883

4.826 mm

EEPROMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

AT28HC256E-12PI by Atmel

AT28HC256E-12PI

Atmel

Atmel's AT28HC256E-12PI is a 32Kx8 EEPROM with 100,000 Write/Erase Cycles. Operating at 5V, it offers 120ns Access Time and supports Asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage.

120 ns

AUTOMATIC WRITE

NO

YES

100000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0003 Amp

EEPROMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

AT25010-10PC by Atmel

AT25010-10PC

Atmel

Atmel's AT25010-10PC is a 1024-bit EEPROM with 128x8 organization, operating at 5V. It features SPI serial bus, 3MHz clock frequency, and 1000000 write/erase cycles. Ideal for applications requiring reliable non-volatile memory in commercial temperature environments.

4-WIRE SERIAL INTERFACE

3 MHz

100

1000000 Write/Erase Cycles

R-PDIP-T8

e0

9.59 mm

1024 bit

EEPROM

8

1

8

128 words

128

SYNCHRONOUS

70 Cel

0 Cel

128X8

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

5.33 mm

SPI

.0001 Amp

EEPROMs

6 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

AT28C256E-15SC by Atmel

AT28C256E-15SC

Atmel

EEPROM; Temperature Grade: COMMERCIAL; No. of Terminals: 28; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 4.5 V;

150 ns

AUTOMATIC WRITE

NO

YES

100000 Write/Erase Cycles

R-PDSO-G28

e0

17.9 mm

262144 bit

EEPROM

8

2

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.4

RECTANGULAR

SMALL OUTLINE

64

PARALLEL

240

5

5

Not Qualified

MIL-STD-883

2.65 mm

.0002 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

YES

7.5 mm

10 ms

AT28C256-15JI by Atmel

AT28C256-15JI

Atmel

AT28C256-15JI by Atmel is a 32Kx8 EEPROM chip with 3-STATE output, operating at 5V. It offers industrial-grade temperature range (-40 to 85°C) and supports asynchronous operation. Ideal for applications requiring reliable non-volatile memory storage with fast access times (150ns).

150 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

262144 bit

EEPROM

8

2

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

MIL-STD-883

3.556 mm

.0002 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

11.43 mm

10 ms

AT28C256-20JC by Atmel

AT28C256-20JC

Atmel

Atmel's AT28C256-20JC is a 32Kx8 EEPROM chip with 3-STATE output, operating at 5V. It offers 10000 Write/Erase cycles, 200ns access time, and supports asynchronous mode. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

200 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

262144 bit

EEPROM

8

2

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

MIL-STD-883

3.556 mm

.0002 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

11.43 mm

10 ms

AT28HC256-12JI by Atmel

AT28HC256-12JI

Atmel

AT28HC256-12JI by Atmel is a 32Kx8 EEPROM chip with 3-STATE output, operating at 5V. It features asynchronous mode, industrial temperature grade, and 10000 write/erase cycles endurance. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

120 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

262144 bit

EEPROM

8

2

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

MIL-STD-883

3.556 mm

.0003 Amp

EEPROMs

80 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

11.43 mm

10 ms

AT28C040-20LI by Atmel

AT28C040-20LI

Atmel

AT28C040-20LI by Atmel is a 512Kx8 EEPROM with 3-STATE output, operating at 5V. It features a fast access time of 200ns and supports asynchronous operation. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

200 ns

AUTOMATIC WRITE

NO

YES

S-CQCC-N44

e0

16.55 mm

4194304 bit

EEPROM

8

1

1

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

QCCN

LCC44,.65SQ

SQUARE

CHIP CARRIER

256

PARALLEL

5

5

Not Qualified

2.74 mm

.003 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

NO LEAD

1.27 mm

QUAD

YES

16.55 mm

10 ms

93C46BX-I/SN by Microchip Technology

93C46BX-I/SN

Microchip Technology

93C46BX-I/SN by Microchip Technology is a serial EEPROM with a memory density of 1024 bit. It operates at a max clock frequency of 3 MHz and has an endurance of 1,000,000 write/erase cycles. This EEPROM is commonly used in industrial applications for data storage and retrieval.

1000000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS

3 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

1024 bit

EEPROM

16

1

1

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

TOTEM POLE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

Not Qualified

YES

NO

TS 16949

1.75 mm

MICROWIRE

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

6 ms

SOFTWARE

24AA02/SN by Microchip Technology

24AA02/SN

Microchip Technology

24AA02/SN by Microchip Technology is a 2048-bit EEPROM with 256x8 organization, operating at 5V. It features I2C serial bus, 1000000 write/erase cycles endurance, and synchronous operation. Ideal for applications requiring small outline packages and low power consumption in commercial temperature grades.

.4 MHz

200

1000000 Write/Erase Cycles

1010XXXR

R-PDSO-G8

e3

4.9 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

70 Cel

0 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

Not Qualified

1.75 mm

I2C

.0001 Amp

3 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

10 ms

HARDWARE

24AA256-I/SM by Microchip Technology

24AA256-I/SM

Microchip Technology

24AA256-I/SM by Microchip Technology is a 32KX8 EEPROM with 262144 bit memory density. Operating at 2.5V, it offers 1000000 Write/Erase Cycles endurance and supports I2C serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.26 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/5

2.5

Not Qualified

NO

AEC-Q100

2.03 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

5.25 mm

5 ms

HARDWARE

24LC21/P by Microchip Technology

24LC21/P

Microchip Technology

24LC21/P by Microchip Technology is an EEPROM with 128x8 organization, operating at 5V. It features I2C control byte 1010XXXR and offers 1000000 write/erase cycles. Ideal for applications requiring low power consumption and reliable non-volatile memory storage in commercial temperature environments.

.4 MHz

200

1000000 Write/Erase Cycles

1010XXXR

R-PDIP-T8

e3

9.46 mm

1024 bit

EEPROM

8

1

1

8

128 words

128

SYNCHRONOUS

70 Cel

0 Cel

128X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

5

Not Qualified

4.32 mm

I2C

.0001 Amp

EEPROMs

3 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

25C040-E/SN by Microchip Technology

25C040-E/SN

Microchip Technology

25C040-E/SN by Microchip Technology is a 512x8 EEPROM with SPI serial bus type, operating at 5V. It offers 1,000,000 write/erase cycles and has a max clock frequency of 3MHz. Ideal for automotive applications due to its TS16949 screening level and wide temperature range from -40°C to 125°C.

3 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

4096 bit

EEPROM

8

1

1

1

8

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

5

Not Qualified

TS 16949

1.75 mm

SPI

.000005 Amp

EEPROMs

5 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

93LC66A-I/P by Microchip Technology

93LC66A-I/P

Microchip Technology

93LC66A-I/P by Microchip Tech is a 512x8 EEPROM with 1MHz clock freq. Operates at -40 to 85°C, has 1000000 write/erase cycles, and uses MICROWIRE serial bus. Ideal for industrial applications requiring reliable non-volatile memory storage.

1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS

1 MHz

200

1000000 Write/Erase Cycles

R-PDIP-T8

e3

9.27 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

TOTEM POLE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

YES

NO

TS 16949

5.33 mm

MICROWIRE

.000001 Amp

EEPROMs

2 mA

5.5 V

1.8 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

YES

7.62 mm

6 ms

SOFTWARE