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LE24163LBXA-SH

Onsemi

LE24163LBXA-SH by Onsemi

LE24163LBXA-SH by Onsemi is a 2KX8 EEPROM with 16384 bit memory density. It operates at 2.5V, has a clock frequency of 0.4 MHz, and supports industrial temperature grade. Ideal for applications requiring low power consumption and reliable non-volatile memory storage in compact devices.

Median Price

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Lifecycle Status

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3

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1k+

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Chip Stock

USA . 38,000 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 589 parts In-Stock

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Component Stockers USA

USA . 473 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 8,451 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

Austria . 6,013 parts In-Stock

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TANS Electronics

Latvia . 5,963 parts In-Stock

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Microchip USA

USA . 5,472 parts In-Stock

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Corphita

USA . 1,627 parts In-Stock

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Kulean Microsystems

USA . 667 parts In-Stock

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 430 parts In-Stock

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Corohmni

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Overview

Unlock the power of efficient data storage with Onsemi's LE24163LBXA-SH EEPROM. Built with top-notch quality and precision, this device offers a reliable solution for various applications in industrial settings. With a nominal supply voltage of 2.5V and a maximum operating temperature of 85 °C, this EEPROM ensures optimal performance even in challenging conditions. Experience seamless operation and high-speed data processing with the LE24163LBXA-SH by Onsemi, providing unmatched value and benefits to customers seeking top-tier memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and reliability for long-term use.

Surface Mount: YES

Surface mount capability makes it easy to integrate into various electronic systems.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures accurate and synchronized data transfers.

Nominal Supply Voltage / Vsup (V): 2.5

Operates efficiently at a nominal supply voltage of 2.5V, suitable for many applications.

No. of Terminals: 5

Limited number of terminals simplifies the design and integration process.

Minimum Operating Temperature: -40 °C

Capable of functioning at extremely low temperatures, ideal for harsh environments.

Maximum Operating Temperature: 85 °C

Can operate effectively at high temperatures without performance degradation.

Memory Density: 16384 bit

High memory density allows for storing a large amount of data in a compact device.

Maximum Write Cycle Time (tWC): 5 ms

Fast write cycle time ensures quick data storage and retrieval.

Technical Specifications

EEPROM LE24163LBXA-SH attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

FOR WRITE OPERATION-1.8V TO 3.6V SUPPLY

Maximum Clock Frequency (fCLK):

.4 MHz

JESD-30 Code:

R-PBGA-B5

JESD-609 Code:

e1

Length:

1.2 mm

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

5

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

.33 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

.8 mm

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

LE24163LBXA-SH Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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