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LE2416DXATBG

Onsemi

LE2416DXATBG by Onsemi

LE2416DXATBG by Onsemi is a 2Kx8 EEPROM with I2C serial bus, operating at 1MHz. It has a memory density of 16384 bits and operates in industrial temperature range (-40 to 85°C). Suitable for applications requiring low power consumption and compact design.

Median Price

$0.270

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 20,000 parts In-Stock

1+ parts

-

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$0.270

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$0.270

Flip Electronics (Authorized)

USA . 20,000 parts In-Stock

1+ parts

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,149 parts In-Stock

1+ parts

$0.270

100+ parts

-

1k+ parts

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10k+ parts

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2,149

$0.270

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Flip Electronics

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

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20,000

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Digiode

USA . 383 parts In-Stock

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383

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 431 parts In-Stock

1+ parts

$0.270

100+ parts

-

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10k+ parts

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431

$0.270

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$4.476

100+ parts

$4.073

1k+ parts

$3.670

10k+ parts

-

5,000

$4.476

$4.073

$3.670

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Problanco Electronics

Mexico . 8,102 parts In-Stock

1+ parts

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8,102

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TANS Electronics

Latvia . 5,370 parts In-Stock

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5,370

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SupplyDigital Components

Austria . 5,165 parts In-Stock

1+ parts

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5,165

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QUARKTWIN TECHNOLOGY LTD

USA . 4,735 parts In-Stock

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4,735

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Kulean Microsystems

USA . 3,312 parts In-Stock

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3,312

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Corphita

USA . 363 parts In-Stock

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363

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Microchip USA

USA . 327 parts In-Stock

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327

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UHIMA Technologies

Türkiye . 88 parts In-Stock

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88

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Overview

Discover the cutting-edge LE2416DXATBG EEPROM by Onsemi, a reliable and high-quality product that guarantees top-notch performance. Backed by the reputable manufacturer Onsemi, this EEPROM is perfect for a wide range of applications. From industrial settings to consumer electronics, this versatile product offers unrivaled value and benefits to customers. Say goodbye to slow write cycle times with the LE2416DXATBG, providing quick and efficient data storage solutions. Upgrade your devices with this advanced technology and experience the advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good durability and protection for the EEPROM, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise and reliable data transmission, making the EEPROM suitable for applications requiring strict timing requirements.

Nominal Supply Voltage / Vsup (V): 2

Operating at a nominal supply voltage of 2V enables energy-efficient operation and compatibility with low-power systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this EEPROM is suitable for use in industrial environments where elevated temperatures may be encountered.

Organization: 2KX8

The organization of 2Kx8 allows for convenient storage and retrieval of data in small chunks, making it ideal for applications requiring frequent data access.

Minimum Operating Temperature: -40 °C

The EEPROM can operate effectively even in extremely low temperatures, making it suitable for use in harsh cold environments.

Serial Bus Type: I2C

The I2C serial bus type offers a simple and efficient way to communicate with the EEPROM, enabling easy integration into a wide range of systems.

Memory Density: 16384 bit

With a high memory density of 16384 bits, this EEPROM can store a large amount of data in a compact form factor, making it ideal for space-constrained applications.

Technical Specifications

EEPROM LE2416DXATBG attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

1 MHz

JESD-30 Code:

R-PBGA-B6

JESD-609 Code:

e1

Length:

1.2 mm

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.33 mm

Serial Bus Type:

I2C

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

.8 mm

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

LE2416DXATBG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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