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LE24C043M

Onsemi

LE24C043M by Onsemi

The Onsemi LE24C043M is an EEPROM with 512x8 organization, I2C control byte of 101000MR, and endurance of 1M write/erase cycles. It is used in industrial applications for storing data securely with a memory density of 4096 bit and operates at temperatures ranging from -40 to 85 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,470 parts In-Stock

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Vyrian

USA . 1,288 parts In-Stock

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SupplyDigital Components

Austria . 6,890 parts In-Stock

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6,890

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TANS Electronics

Latvia . 5,578 parts In-Stock

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Problanco Electronics

Mexico . 4,744 parts In-Stock

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Corphita

USA . 2,389 parts In-Stock

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Kulean Microsystems

USA . 1,453 parts In-Stock

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UHIMA Technologies

Türkiye . 980 parts In-Stock

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980

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Corohmni

South Africa . 364 parts In-Stock

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Overview

Unlock the power of data storage with the LE24C043M by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality EEPROM products that offer reliable performance and durability. Ideal for industrial applications, this small outline package provides 512 words of memory with 8-bit width, ensuring optimal data retention and endurance. With a maximum operating temperature of 85 °C and I2C control capabilities, the LE24C043M is designed to meet your data storage needs with ease. Experience the value and benefits of Onsemi's cutting-edge technology in data storage solutions today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the EEPROM, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy integration onto circuit boards, saving space and simplifying assembly.

Power Supplies (V): 3/5

Compatible with both 3V and 5V power supplies, offering flexibility in different system designs.

No. of Terminals: 8

Sufficient number of terminals for connecting the EEPROM in a circuit.

Organization: 512X8

Provides ample storage capacity with 512 words of 8-bit width.

I2C Control Byte: 101000MR

Allows for easy control and communication with other devices via the I2C interface.

Temperature Grade: INDUSTRIAL

Designed to operate reliably in industrial environments with a wide temperature range.

Endurance: 1000000 Write/Erase Cycles

Long-lasting memory endurance for frequent read/write operations, ensuring data reliability.

Memory Density: 4096 bit

Offers high memory density in a compact package, suitable for storing a large amount of data.

Serial Bus Type: I2C

Uses the I2C serial bus protocol for communication, widely supported in various applications.

Technical Specifications

EEPROM LE24C043M attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Minimum Data Retention Time:

20

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

101000MR

JESD-30 Code:

R-PDSO-G8

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

8

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Serial Bus Type:

I2C

Maximum Standby Current:

.000002 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Write Protection:

HARDWARE

Trade Compliance

LE24C043M Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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