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LE2416RLBXA

Onsemi

LE2416RLBXA by Onsemi

LE2416RLBXA by Onsemi is a 2Kx8 EEPROM with 16384-bit memory density. It operates at 2.5V, -40 to 85 °C, and supports I2C serial bus type. Ideal for industrial applications requiring low-profile, fine-pitch grid array packages with synchronous operation up to 0.4MHz clock frequency.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 921 parts In-Stock

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Vyrian

USA . 692 parts In-Stock

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TANS Electronics

Latvia . 5,903 parts In-Stock

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Problanco Electronics

Mexico . 3,525 parts In-Stock

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Corphita

USA . 1,336 parts In-Stock

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SupplyDigital Components

Austria . 403 parts In-Stock

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Kulean Microsystems

USA . 293 parts In-Stock

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Corohmni

South Africa . 171 parts In-Stock

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UHIMA Technologies

Türkiye . 35 parts In-Stock

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Overview

Enhance your electronic devices with the LE2416RLBXA by Onsemi, a top-quality EEPROM that guarantees superior performance and reliability. Manufactured by the trusted brand Onsemi, this EEPROM is perfect for a wide range of applications in industries such as automotive, consumer electronics, and industrial automation. With its compact design and advanced features like synchronous operation and industrial-grade temperature range, the LE2416RLBXA offers excellent value and benefits to customers looking for a dependable memory solution. Upgrade your products today with the cutting-edge technology of Onsemi's LE2416RLBXA.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the EEPROM, ensuring long-term reliability.

Surface Mount: YES

Allows for easy installation on circuit boards, saving space and making it suitable for compact designs.

Operating Mode: SYNCHRONOUS

Enables precise timing and synchronization in data transfer, enhancing performance.

Nominal Supply Voltage / Vsup (V): 2.5

Optimal voltage for efficient operation and power consumption.

No. of Terminals: 6

Simplified connectivity and integration within circuit systems.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments with varying temperature conditions.

Organization: 2KX8

Arrangement of memory cells that allows for efficient storage and retrieval of data.

Minimum Operating Temperature: -40 °C

Can withstand harsh cold environments without compromising performance.

Technology: CMOS

Low power consumption and high noise immunity, ideal for energy-efficient applications.

Serial Bus Type: I2C

Supports communication with other devices, facilitating data exchange and system integration.

Technical Specifications

EEPROM LE2416RLBXA attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

JESD-30 Code:

R-PBGA-B6

Length:

1.2 mm

Memory Density:

16384 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

6

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

SERIAL

Maximum Seated Height:

.33 mm

Serial Bus Type:

I2C

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Width:

.8 mm

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

LE2416RLBXA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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