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LE24C042M

Onsemi

LE24C042M by Onsemi

The Onsemi LE24C042M is an EEPROM with 512x8 organization, CMOS technology, and 4096-bit memory density. It operates at -40 to 85 °C, suitable for industrial applications. With I2C serial bus type and 1000000 write/erase cycles endurance, it offers reliable data storage in a small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,182 parts In-Stock

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Digiode

USA . 599 parts In-Stock

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TANS Electronics

Latvia . 6,306 parts In-Stock

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Kulean Microsystems

USA . 6,259 parts In-Stock

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SupplyDigital Components

Austria . 4,073 parts In-Stock

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Problanco Electronics

Mexico . 3,869 parts In-Stock

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UHIMA Technologies

Türkiye . 708 parts In-Stock

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Corphita

USA . 461 parts In-Stock

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Corohmni

South Africa . 352 parts In-Stock

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Overview

Discover the LE24C042M by Onsemi, a top-quality EEPROM that offers unparalleled reliability and performance. Manufactured by Onsemi, a trusted name in the industry, this EEPROM is perfect for a wide range of applications. Its compact design and industrial-grade temperature range make it ideal for demanding environments. With a memory density of 4096 bits and endurance of 1,000,000 write/erase cycles, this EEPROM provides exceptional value and benefits to customers looking for a reliable and efficient solution. Unlock the potential of your projects with the LE24C042M today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the EEPROM, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Allows for easy installation and space-saving on PCBs, making it suitable for compact electronic devices.

Power Supplies (V): 3/5

Supports both 3V and 5V power supplies, offering flexibility for integration into different systems.

No. of Terminals: 8

Provides sufficient connectivity options for interfacing with other components in the system.

Package Style (Meter): SMALL OUTLINE

Compact small outline package design saves space and allows for efficient PCB layout.

Maximum Operating Temperature: 85 °C

Capable of operating at high temperatures, suitable for industrial applications where heat dissipation is crucial.

Organization: 512X8

Offers a good balance between storage capacity (512 words) and data width (8 bits), suitable for various data storage applications.

I2C Control Byte: 1010000R

Utilizes I2C control byte for communication, enabling easy integration with I2C bus systems.

Temperature Grade: INDUSTRIAL

Designed to meet industrial temperature requirements, ensuring reliable performance in harsh environments.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed operation, making it energy-efficient.

Parallel or Serial: SERIAL

Operates in serial mode, simplifying data transfer and communication with other devices.

Memory Density: 4096 bit

Offers high memory density in a small package, enabling storage of a large amount of data in a compact form factor.

Memory IC Type: EEPROM

EEPROM technology provides non-volatile data storage, allowing data to be retained even when power is disconnected.

Technical Specifications

EEPROM LE24C042M attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Minimum Data Retention Time:

20

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010000R

JESD-30 Code:

R-PDSO-G8

Memory Density:

4096 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

8

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Serial Bus Type:

I2C

Maximum Standby Current:

.000002 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

LE24C042M Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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