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LE2432DXATBG

Onsemi

LE2432DXATBG by Onsemi

LE2432DXATBG by Onsemi is a 4KX8 EEPROM with 32768 bit memory density. It operates at 1 MHz clock frequency, has I2C serial bus type, and supports synchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in compact devices.

Median Price

$0.200

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 45,000 parts In-Stock

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$0.200

Flip Electronics (Authorized)

USA . 45,000 parts In-Stock

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45,000

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Distributors (In-Stock)

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Vyrian

USA . 357 parts In-Stock

1+ parts

$0.200

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357

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Flip Electronics

USA . 45,000 parts In-Stock

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Bristol Electronics

USA . 5,000 parts In-Stock

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Digiode

USA . 1,732 parts In-Stock

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1,732

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Distributors (Availability)

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Corohmni

South Africa . 86 parts In-Stock

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$0.200

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86

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SupplyDigital Components

Austria . 5,296 parts In-Stock

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Kulean Microsystems

USA . 5,295 parts In-Stock

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Problanco Electronics

Mexico . 4,021 parts In-Stock

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TANS Electronics

Latvia . 1,503 parts In-Stock

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UHIMA Technologies

Türkiye . 674 parts In-Stock

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Microchip USA

USA . 479 parts In-Stock

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479

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Corphita

USA . 278 parts In-Stock

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278

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Overview

Unlock the power of data storage with the LE2432DXATBG EEPROM by Onsemi. With a compact package body and high-quality design, this device offers reliable performance in a variety of applications. From industrial automation to consumer electronics, this synchronous operating mode EEPROM provides seamless integration and versatile functionality. Trust Onsemi's reputation for excellence and experience the benefits of efficient data storage solutions with the LE2432DXATBG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise and coordinated functionality, enhancing the overall performance of the EEPROM.

Nominal Supply Voltage / Vsup (V): 2

The nominal supply voltage of 2V provides a balanced power requirement for the EEPROM, making it energy-efficient.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C allows the EEPROM to function effectively in various environmental conditions.

Memory Density: 32768 bit

With a high memory density of 32768 bits, this EEPROM can store a large amount of data, making it suitable for applications requiring extensive data storage.

Technical Specifications

EEPROM LE2432DXATBG attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

1 MHz

JESD-30 Code:

R-PBGA-B6

JESD-609 Code:

e1

Length:

1.2 mm

Memory Density:

32768 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

No. of Words:

4096 words

No. of Words Code:

4K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.33 mm

Serial Bus Type:

I2C

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

.8 mm

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

LE2432DXATBG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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