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LE2464RDXATDG

Onsemi

LE2464RDXATDG by Onsemi

LE2464RDXATDG by Onsemi is a 8KX8 EEPROM with 65536 bit memory density. It operates at 1 MHz clock frequency, has I2C serial bus type, and supports synchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in compact devices.

Median Price

$0.200

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.170

15,000

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-

-

$0.170

Flip Electronics (Authorized)

USA . 15,000 parts In-Stock

1+ parts

-

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10k+ parts

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15,000

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Rochester

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

$0.247

1k+ parts

$0.205

10k+ parts

$0.183

5,000

-

$0.247

$0.205

$0.183

Farnell

UK . 5,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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$0.162

5,000

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-

-

$0.162

Verical

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

$0.229

5,000

-

-

-

$0.229

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,466 parts In-Stock

1+ parts

$0.162

100+ parts

-

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1,466

$0.162

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Digiode

USA . 1,219 parts In-Stock

1+ parts

$0.193

100+ parts

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10k+ parts

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1,219

$0.193

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Flip Electronics

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

-

15,000

-

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 366 parts In-Stock

1+ parts

$0.162

100+ parts

-

1k+ parts

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10k+ parts

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366

$0.162

-

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Corphita

USA . 435 parts In-Stock

1+ parts

$0.183

100+ parts

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435

$0.183

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Kulean Microsystems

USA . 7,036 parts In-Stock

1+ parts

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7,036

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Problanco Electronics

Mexico . 6,199 parts In-Stock

1+ parts

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6,199

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TANS Electronics

Latvia . 5,783 parts In-Stock

1+ parts

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5,783

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Continental Prestige Electronics

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.162

10k+ parts

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5,000

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-

$0.162

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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2,000

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SupplyDigital Components

Austria . 1,851 parts In-Stock

1+ parts

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1,851

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UHIMA Technologies

Türkiye . 475 parts In-Stock

1+ parts

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475

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Microchip USA

USA . 341 parts In-Stock

1+ parts

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341

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Overview

Unlock endless possibilities with the LE2464RDXATDG by Onsemi. This high-quality EEPROM offers reliable performance and versatility for a variety of applications. With a nominal supply voltage of 2V and a maximum clock frequency of 1MHz, this product provides seamless operation in industrial settings. Its compact size and thin profile make it ideal for space-constrained designs. Trust Onsemi's expertise to deliver exceptional value and innovation with the LE2464RDXATDG, offering customers unmatched benefits and advantages in their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the EEPROM, ensuring reliability in various operating conditions.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving space and simplifying the assembly process.

Operating Mode: SYNCHRONOUS

Enables synchronized data transfer, enhancing performance and efficiency during read and write operations.

Nominal Supply Voltage / Vsup (V): 2

Optimal supply voltage for the EEPROM, ensuring stable operation and longevity.

Maximum Operating Temperature: 85 °C

Suitable for industrial applications with higher temperature requirements, offering reliability in harsh environments.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed data processing, making it energy efficient and fast.

Serial Bus Type: I2C

Utilizes the widely used I2C interface for communication, ensuring compatibility with a wide range of devices and systems.

Technical Specifications

EEPROM LE2464RDXATDG attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

1 MHz

JESD-30 Code:

R-PBGA-B6

JESD-609 Code:

e1

Length:

1.2 mm

Memory Density:

65536 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.33 mm

Serial Bus Type:

I2C

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

.8 mm

Maximum Write Cycle Time (tWC):

5 ms

Trade Compliance

LE2464RDXATDG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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