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TH58NVG5S0FTA20

Toshiba

TH58NVG5S0FTA20 by Toshiba

Toshiba's TH58NVG5S0FTA20 EEPROM features 48 terminals, 3.3V supply voltage, and 70°C max temp. Ideal for commercial applications, it offers a memory density of 34359738368 bits in a small outline package with gull wing terminals.

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Overview

Unlock the power of innovation with the TH58NVG5S0FTA20 by Toshiba. This cutting-edge EEPROM boasts unmatched quality and reliability, backed by Toshiba's reputation as a leader in semiconductor technology. Ideal for a wide range of applications, this versatile device offers customers unparalleled value and benefits. Experience seamless operation, superior performance, and enhanced efficiency with the TH58NVG5S0FTA20. Choose Toshiba for excellence you can trust.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material ensures durability and protection for the EEPROM, making it a reliable choice for long-term use.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort during the manufacturing process.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent control of read and write operations, providing flexibility and efficiency in data access.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a nominal supply voltage of 3.3V, making it compatible with a wide range of electronic systems and devices.

No. of Terminals: 48

48 terminals provide ample connectivity options for integrating the EEPROM into complex circuit designs.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Small outline and thin profile package style saves space on the circuit board, ideal for compact electronic devices.

Maximum Operating Temperature: 70 °C

Operates efficiently at temperatures up to 70°C, suitable for a wide range of operating environments.

Organization: 4GX8

4GX8 organization allows for efficient data storage and retrieval, optimizing performance for various applications.

Minimum Operating Temperature: 0 °C

Capable of operating at temperatures as low as 0°C, making it suitable for use in cold environments.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit board layout and connection options, making installation easier and more convenient.

Maximum Seated Height: 1.2 mm

Low seated height of 1.2mm allows for a compact design and easy integration into space-constrained electronic devices.

Width: 12 mm

Width of 12mm provides a balance between space-saving design and ease of handling during installation and maintenance.

Minimum Supply Voltage (Vsup): 2.7 V

Works reliably at a minimum supply voltage of 2.7V, ensuring stable operation even under low power conditions.

Length: 18.4 mm

Length of 18.4mm offers a compact form factor that can fit into tight spaces, ideal for portable and miniaturized electronic devices.

Programming Voltage (V): 3

Programming voltage of 3V ensures compatibility with standard programming protocols and simplifies integration into existing systems.

Temperature Grade: COMMERCIAL

Commercial-grade temperature rating makes this EEPROM suitable for standard operating conditions in commercial electronic devices.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed performance, making the EEPROM energy-efficient and reliable.

Parallel or Serial: PARALLEL

Parallel interface allows for fast data transfer rates and simultaneous access to multiple memory locations, enhancing overall system performance.

Terminal Form: GULL WING

Gull wing terminal form provides secure soldering connections and easy installation on the circuit board, ensuring reliability in operation.

No. of Words: 4294967296 words

Large capacity of 4294967296 words allows for storing vast amounts of data, suitable for applications requiring extensive memory storage.

Memory Width: 8

Memory width of 8 bits ensures compatibility with standard data formats and facilitates data processing and retrieval operations.

Terminal Pitch: 0.5 mm

Terminal pitch of 0.5mm enables high-density mounting and space-saving design, making it ideal for compact circuit layouts.

No. of Words Code: 4G

4G words code provides a standardized format for addressing memory locations, ensuring efficient data access and management.

Maximum Supply Voltage (Vsup): 3.6 V

Operates safely at a maximum supply voltage of 3.6V, protecting the EEPROM from voltage surges and ensuring stable performance.

Memory Density: 34359738368 bit

High memory density of 34359738368 bits offers ample storage capacity for data-intensive applications, making it a versatile choice for various use cases.

Memory IC Type: EEPROM

EEPROM memory IC type ensures non-volatile data storage and reliable data retention, making it suitable for storing critical system information.

Technical Specifications

EEPROM TH58NVG5S0FTA20 attributes and parameters. Explore more EEPROM devices from Toshiba

Specs

JESD-30 Code:

R-PDSO-G48

Length:

18.4 mm

Memory Density:

34359738368 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

4294967296 words

No. of Words Code:

4G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

4GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

12 mm

Trade Compliance

TH58NVG5S0FTA20 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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