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M24C02-WBN6P

STMicroelectronics

M24C02-WBN6P by STMicroelectronics

M24C02-WBN6P by STMicroelectronics is an EEPROM with 256x8 organization, operating at 5V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact rectangular package.

Median Price

$0.133

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.133

100+ parts

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150

$0.133

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Chip Stock

USA . 25,755 parts In-Stock

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25,755

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SIE Connect GmbH - GreenChips

Germany . 12,000 parts In-Stock

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12,000

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Greenchips

USA . 12,000 parts In-Stock

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12,000

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Vyrian

USA . 6,067 parts In-Stock

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6,067

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Digiode

USA . 1,870 parts In-Stock

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1,870

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LWI Electronics Inc

India . 1,550 parts In-Stock

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1,550

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Extreme Components

USA . 283 parts In-Stock

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283

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ComSIT Distribution GmbH

Germany . 271 parts In-Stock

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271

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ComSIT USA

USA . 271 parts In-Stock

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271

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Anansix

USA . 226 parts In-Stock

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226

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Bas Electronics GmbH & Co. KG

Germany . 135 parts In-Stock

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135

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J2 Sourcing AB

Sweden . 72 parts In-Stock

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72

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Prism Electronics

USA . 49 parts In-Stock

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49

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EPE Components Inc.

USA . 22 parts In-Stock

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22

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Bristol Electronics

USA . 22 parts In-Stock

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22

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Cyclops Electronics Ltd

UK . 18 parts In-Stock

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18

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Pegasus Components GmbH

Germany . 17 parts In-Stock

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17

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EMSNET

USA . 7 parts In-Stock

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7

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 1,096 parts In-Stock

1+ parts

$0.133

100+ parts

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1k+ parts

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10k+ parts

$0.130

1,096

$0.133

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-

$0.130

Argo Parts USA

USA . 1,084 parts In-Stock

1+ parts

$0.133

100+ parts

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$0.129

1,084

$0.133

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$0.129

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.133

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$0.130

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500

$0.133

$0.130

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$2.618

100+ parts

$2.487

1k+ parts

$2.487

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200

$2.618

$2.487

$2.487

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Aztec Data Supply Inc.

USA . 2,536 parts In-Stock

1+ parts

$2.760

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2,536

$2.760

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IDEA Electronic Components Group

UK . 1,926 parts In-Stock

1+ parts

$4.615

100+ parts

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$4.153

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1,926

$4.615

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$4.153

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Corohmni

South Africa . 669 parts In-Stock

1+ parts

$5.444

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669

$5.444

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MKK Technologies

India . 1,883 parts In-Stock

1+ parts

$8.678

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1,883

$8.678

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DigiPath Technology Company

USA . 1,883 parts In-Stock

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$8.678

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1,883

$8.678

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Ampacity Inc.

Singapore . 1,253 parts In-Stock

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$9.000

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1,253

$9.000

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Microchip USA

USA . 325 parts In-Stock

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$9.370

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325

$9.370

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AZTECH Wire

Italy . 578 parts In-Stock

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$13.497

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578

$13.497

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Semicontronic

India . 1,615 parts In-Stock

1+ parts

$27.000

100+ parts

$26.325

1k+ parts

$26.190

10k+ parts

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1,615

$27.000

$26.325

$26.190

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Kepictronics

USA . 8,850 parts In-Stock

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8,850

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Lixinc

USA . 7,696 parts In-Stock

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7,696

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Corphita

USA . 4,180 parts In-Stock

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4,180

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Perfect Parts

USA . 3,228 parts In-Stock

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3,228

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A-Z Elektronik GmbH

Germany . 2,252 parts In-Stock

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2,252

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Parana Technologies

USA . 285 parts In-Stock

1+ parts

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100+ parts

$5.518

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285

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$5.518

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Assy Fe

Spain . 152 parts In-Stock

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152

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Cyclops Electronics Ltd (Excess)

UK . 65 parts In-Stock

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65

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Overview

Unlock the power of STMicroelectronics with the M24C02-WBN6P EEPROM. Crafted with precision and reliability, this memory IC offers unparalleled performance in a compact package. Ideal for a wide range of applications, this EEPROM provides users with seamless data storage solutions. Experience the value of industrial-grade technology, high endurance, and efficient operation. Trust STMicroelectronics to deliver quality products that exceed expectations. Elevate your projects with the M24C02-WBN6P and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and protection for the EEPROM, making it a reliable choice for long-term use.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into various systems and devices, maximizing compatibility.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures efficient data transfer and communication, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage offers stable power input, promoting consistent and reliable operation of the EEPROM.

Power Supplies (V): 3/5

The dual power supply option (3V/5V) gives flexibility in different system configurations, making it versatile for various applications.

No. of Terminals: 8

The 8 terminals provide simple connectivity and installation, simplifying the setup process.

Package Style (Meter): IN-LINE

The in-line package style offers a compact form factor, ideal for space-constrained environments.

Maximum Operating Temperature: 85 °C

With a high operating temperature range, this EEPROM can withstand harsh environmental conditions and remain functional.

Organization: 256X8

The 256x8 organization allows for efficient data storage and retrieval, optimizing memory usage.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this EEPROM can function in extreme cold conditions without issues.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and ensures a secure connection, maintaining reliability over time.

I2C Control Byte: 1010DDDR

The I2C control byte enhances communication efficiency and simplifies data transfer processes.

Terminal Position: DUAL

The dual terminal position offers flexibility in installation and connection options, accommodating various system setups.

Write Protection: HARDWARE

The hardware write protection feature enhances data security by preventing unauthorized data modifications.

Maximum Seated Height: 5.33 mm

The low seated height allows for seamless integration into compact devices and systems, optimizing space utilization.

Maximum Clock Frequency (fCLK): 0.4 MHz

The high clock frequency enables fast data transfer and processing speeds, improving overall performance.

Width: 7.62 mm

The compact width makes this EEPROM suitable for applications with limited space, ensuring easy installation.

Minimum Supply Voltage (Vsup): 2.5 V

The 2.5V minimum supply voltage ensures compatibility with a wide range of power sources, increasing versatility.

Length: 9.27 mm

The optimal length of the EEPROM facilitates easy installation and integration into various electronic systems.

Temperature Grade: INDUSTRIAL

The industrial temperature grade makes this EEPROM ideal for use in demanding industrial environments where temperature fluctuations may occur.

Technology: CMOS

The CMOS technology offers low power consumption and high-speed operation, making this EEPROM energy-efficient and fast.

Parallel or Serial: SERIAL

The serial interface allows for simple and efficient data transfer, optimizing performance in various applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form ensures secure connections and stable performance, making it suitable for rugged environments.

Maximum Supply Current: 2 mA

The low maximum supply current requirement ensures power efficiency and minimal energy consumption during operation.

No. of Words: 256 words

The 256-word capacity provides ample storage space for data, allowing for extensive data storage and retrieval capabilities.

Memory Width: 8

The 8-bit memory width allows for efficient data processing and storage, enhancing the overall performance of the EEPROM.

Minimum Data Retention Time: 40

The 40-year minimum data retention time ensures data integrity and reliability over an extended period.

Terminal Pitch: 2.54 mm

The 2.54mm terminal pitch enables easy connection and installation, promoting convenience and simplicity.

No. of Words Code: 256

The 256 word code capacity offers versatility and flexibility in storing and accessing data efficiently.

Maximum Supply Voltage (Vsup): 5.5 V

The 5.5V maximum supply voltage allows for a wide range of power sources, enhancing compatibility and usability.

Endurance: 1000000 Write/Erase Cycles

The high endurance rating of 1,000,000 write/erase cycles ensures long-lasting performance and reliability for heavy data usage applications.

Serial Bus Type: I2C

The I2C serial bus type enables easy interface and communication with other devices, enhancing connectivity and compatibility.

Maximum Write Cycle Time (tWC): 5 ms

The fast 5ms maximum write cycle time ensures quick data writing, improving efficiency and performance.

Memory Density: 2048 bit

The 2048-bit memory density provides ample storage capacity, accommodating a wide range of data storage needs.

Memory IC Type: EEPROM

The EEPROM memory IC type offers non-volatile data storage, ensuring data retention even when power is removed, making it suitable for critical data storage applications.

Maximum Standby Current: 0.000001 Amp

The ultra-low maximum standby current requirement ensures minimal power consumption in idle mode, making this EEPROM energy-efficient.

Technical Specifications

EEPROM M24C02-WBN6P attributes and parameters. Explore more EEPROM devices from STMicroelectronics

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

40

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

Length:

9.27 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

5.33 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

2 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

M24C02-WBN6P Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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