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TH58NVG4S0FTA20

Toshiba

TH58NVG4S0FTA20 by Toshiba

Toshiba's TH58NVG4S0FTA20 EEPROM operates at 3.3V, with 48 terminals in a small outline package. It has a memory density of 17179869184 bits and is ideal for commercial applications requiring parallel operation with a programming voltage of 3V.

Median Price

$15.000

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Bristol Electronics

USA . 54 parts In-Stock

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$15.000

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Vyrian

USA . 3,929 parts In-Stock

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Quantum Digital Technology

USA . 1,300 parts In-Stock

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Nova Conductors

Japan . 67 parts In-Stock

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Microfarads

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Prism Electronics

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AZTECH Wire

Italy . 457 parts In-Stock

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$6.947

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Ampacity Inc.

Singapore . 1,544 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,577 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Perfect Parts

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Kepictronics

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Overview

Experience the innovation and quality of Toshiba with the TH58NVG4S0FTA20 EEPROM. A versatile memory solution perfect for a wide range of applications, this product offers customers the reliability and performance they need. With advanced technology and a commitment to excellence, Toshiba ensures that this EEPROM meets the highest standards in the industry. Discover the value and benefits of choosing Toshiba for your memory needs, and unlock the potential of your electronics with the TH58NVG4S0FTA20. Trust Toshiba for superior quality and unparalleled performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is known for its durability and resistance to extreme temperatures, making the EEPROM suitable for a variety of environments.

Surface Mount: YES

This feature allows for easy and efficient installation on a circuit board, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal voltage of 3.3V ensures reliable performance and energy efficiency.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this EEPROM can function reliably even in harsh conditions.

Memory Density: 17179869184 bit

The high memory density allows for storing a large amount of data in a compact package, making it a versatile solution for various applications.

Technical Specifications

EEPROM TH58NVG4S0FTA20 attributes and parameters. Explore more EEPROM devices from Toshiba

Specs

JESD-30 Code:

R-PDSO-G48

Length:

18.4 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

12 mm

Trade Compliance

TH58NVG4S0FTA20 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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