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24LC512T-I/SMG

Microchip Technology

24LC512T-I/SMG by Microchip Technology

24LC512T-I/SMG by Microchip Technology is an EEPROM with 64KX8 organization, 524288 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates in SERIAL mode via I2C bus, suitable for industrial applications requiring reliable non-volatile memory storage. With a small outline package style and low standby current of 0.000001 Amp, it offers secure hardware write protection and a wide operating temperature range from -40 to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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VNN

France . 5,113 parts In-Stock

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Vyrian

USA . 2,714 parts In-Stock

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2,714

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Nova Conductors

Japan . 900 parts In-Stock

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900

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Rebound Electronics

UK . 77 parts In-Stock

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R&J Components

USA . 60 parts In-Stock

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Corohmni

South Africa . 1,145 parts In-Stock

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$2.837

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$2.837

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Advanced Electronics

New Zealand . 750 parts In-Stock

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$3.038

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$2.887

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$2.887

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750

$3.038

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$2.887

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Aztec Data Supply Inc.

USA . 1,796 parts In-Stock

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$3.410

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$3.410

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Semicontronic

India . 603 parts In-Stock

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$9.000

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$8.775

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$8.730

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603

$9.000

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$8.730

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AZTECH Wire

Italy . 220 parts In-Stock

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$10.659

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Marpe Global Electronics

Taiwan . 8,209 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,251 parts In-Stock

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XL Components Corporation

Australia . 5,141 parts In-Stock

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Authorized Procurement Solutions

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Argo Parts USA

USA . 4,519 parts In-Stock

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QualityLine Systems

Poland . 2,656 parts In-Stock

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Kepictronics

USA . 2,100 parts In-Stock

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Robosynatics

Brazil . 950 parts In-Stock

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Lucentia Tech

USA . 950 parts In-Stock

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950

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Continental Prestige Electronics

USA . 455 parts In-Stock

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Microchip USA

USA . 239 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Unlock the power of reliable data storage with the 24LC512T-I/SMG by Microchip Technology. Crafted with precision and expertise, this EEPROM offers unparalleled quality and durability. Ideal for industrial applications, this small outline package provides secure data retention and fast operation. With a million write/erase cycles and a wide temperature range, this memory IC ensures long-term performance. Trust Microchip Technology to deliver top-notch technology that exceeds expectations. Elevate your projects with the 24LC512T-I/SMG and experience the value of superior memory solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that can withstand various environmental conditions, ensuring longevity of the product.

Nominal Supply Voltage / Vsup (V): 4.5

Optimal supply voltage for efficient performance of the EEPROM.

Maximum Operating Temperature: 85 °C

Can operate in high-temperature environments without compromising functionality.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, making the EEPROM energy-efficient and reliable.

Endurance: 1000000 Write/Erase Cycles

High endurance ensures durability and longevity of the product, making it suitable for frequent read/write operations.

Technical Specifications

EEPROM 24LC512T-I/SMG attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

.4 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

I2C Control Byte:

1010DDDR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

5.245 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

2.03 mm

Serial Bus Type:

I2C

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5.23 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE

Trade Compliance

24LC512T-I/SMG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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