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EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.

EEPROM

Available Parts 850

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
M93S56-WMN6T by STMicroelectronics

M93S56-WMN6T

STMicroelectronics

M93S56-WMN6T by STMicroelectronics is a 2048-bit EEPROM with 128x16 organization, operating at up to 2 MHz clock frequency. It features hardware/software write protection and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

M93S56-WMN6 by STMicroelectronics

M93S56-WMN6

STMicroelectronics

M93S56-WMN6 by STMicroelectronics is a 2048-bit EEPROM with 128x16 organization, operating at up to 2 MHz. It features synchronous operation, hardware/software write protection, and MICROWIRE serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

M93S66-WMN6T by STMicroelectronics

M93S66-WMN6T

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Pitch: 1.27 mm;

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

16

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X16

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

M24C04-BN6 by STMicroelectronics

M24C04-BN6

STMicroelectronics

The STMicroelectronics M24C04-BN6 is an EEPROM with 512x8 organization, operating at 5V. It features a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e0

9.27 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M95080-MN6T by STMicroelectronics

M95080-MN6T

STMicroelectronics

The STMicroelectronics M95080-MN6T is an EEPROM with 1KX8 organization, SPI serial bus type, and 8192 bit memory density. It operates at a max clock frequency of 5 MHz and has a write protection feature for hardware/software security. Ideal for industrial applications requiring reliable non-volatile memory storage.

MINIMUM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

8192 bit

EEPROM

8

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

SPI

.00001 Amp

EEPROMs

5 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE/SOFTWARE

M95160-MN6T by STMicroelectronics

M95160-MN6T

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Position: DUAL;

MINIMUM 1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

SPI

.00001 Amp

EEPROMs

4 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE/SOFTWARE

M24C02-MN6T by STMicroelectronics

M24C02-MN6T

STMicroelectronics

The STMicroelectronics M24C02-MN6T is an EEPROM with 256x8 organization, I2C control byte 1010DDDR, and 2048-bit memory density. It operates in industrial temperature range (-40 to 85 °C) with a max clock frequency of 0.4 MHz. Ideal for applications requiring serial communication and write protection features.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.9 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C04-MN6T by STMicroelectronics

M24C04-MN6T

STMicroelectronics

STMicroelectronics' M24C04-MN6T is an EEPROM with 512x8 organization, operating at 5V. It features I2C control byte 1010DDMR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage with a small footprint.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24C04-MN6 by STMicroelectronics

M24C04-MN6

STMicroelectronics

STMicroelectronics' M24C04-MN6 is a 4096-bit EEPROM with 512x8 organization, operating at 5V. It features I2C control byte for synchronous operation and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory in a small outline package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e0

4.9 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M95256-WBN6 by STMicroelectronics

M95256-WBN6

STMicroelectronics

M95256-WBN6 by STMicroelectronics is a 32Kx8 EEPROM with SPI serial bus, 262144-bit memory density, and 100000 write/erase cycles. It operates at a max clock frequency of 5 MHz and has a temperature range of -40 to 85°C. Ideal for industrial applications requiring reliable non-volatile memory storage.

100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

5 MHz

40

100000 Write/Erase Cycles

R-PDIP-T8

e0

9.27 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

SPI

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

3.3

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE

M95128-WMN6T by STMicroelectronics

M95128-WMN6T

STMicroelectronics

M95128-WMN6T by STMicroelectronics is a 16KX8 EEPROM with SPI serial bus, 131072 bit memory density, and 100000 write/erase cycles. It operates at -40 to 85 °C with a clock frequency of up to 5 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage.

100000 ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION

5 MHz

40

100000 Write/Erase Cycles

R-PDSO-G8

e0

4.9 mm

131072 bit

EEPROM

8

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

SPI

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE/SOFTWARE

XC1701LPD8C by Xilinx

XC1701LPD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1701PD8C by Xilinx

XC1701PD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

20 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1701PD8I by Xilinx

XC1701PD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Technology: CMOS;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

20 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17512LPD8C by Xilinx

XC17512LPD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 3 V;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

524288 bit

CONFIGURATION MEMORY

1

1

1

8

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17512LPD8I by Xilinx

XC17512LPD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 225;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

524288 bit

CONFIGURATION MEMORY

1

1

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC1701SO20C by Xilinx

XC1701SO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDSO-G20

e0

12.827 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

5

Not Qualified

2.6416 mm

.00005 Amp

OTP ROMs

20 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5184 mm

XC1701SO20I by Xilinx

XC1701SO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Package Equivalence Code: SOP20,.4;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDSO-G20

e0

12.827 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

5

Not Qualified

2.6416 mm

.00005 Amp

OTP ROMs

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5184 mm

XC17512LSO20C by Xilinx

XC17512LSO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Width: 7.5184 mm;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDSO-G20

e0

12.827 mm

524288 bit

CONFIGURATION MEMORY

1

3

1

20

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.6416 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5184 mm

XC17512LSO20I by Xilinx

XC17512LSO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 225;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDSO-G20

e0

12.827 mm

524288 bit

CONFIGURATION MEMORY

1

3

1

20

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.6416 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5184 mm

XC1701PC20C by Xilinx

XC1701PC20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Surface Mount: YES;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

225

5

Not Qualified

4.572 mm

.00005 Amp

OTP ROMs

20 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC1701PC20I by Xilinx

XC1701PC20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Surface Mount: YES;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

225

5

Not Qualified

4.572 mm

.00005 Amp

OTP ROMs

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC17512LPC20C by Xilinx

XC17512LPC20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Maximum Supply Current: 5 mA;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

524288 bit

CONFIGURATION MEMORY

1

3

1

20

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.572 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC17512LPC20I by Xilinx

XC17512LPC20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Width: 8.9662 mm;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

524288 bit

CONFIGURATION MEMORY

1

3

1

20

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.572 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC1702LPC44C by Xilinx

XC1702LPC44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; No. of Functions: 1;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

2097152 bit

CONFIGURATION MEMORY

1

3

1

44

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.572 mm

.00005 Amp

OTP ROMs

10 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC1702LPC44I by Xilinx

XC1702LPC44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Maximum Supply Current: 10 mA;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

2097152 bit

CONFIGURATION MEMORY

1

3

1

44

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.572 mm

.00005 Amp

OTP ROMs

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC1704LPC44I by Xilinx

XC1704LPC44I

Xilinx

Xilinx XC1704LPC44I is a 3.3V EEPROM with 44 terminals in a square chip carrier package. Operating at -40 to 85°C, it offers 15MHz clock frequency and 4194304-bit memory density for industrial applications requiring configuration memory with synchronous operation.

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

44

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.572 mm

.00005 Amp

OTP ROMs

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC1702LVQ44C by Xilinx

XC1702LVQ44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Terminal Form: GULL WING;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

S-PQFP-G44

e0

10 mm

2097152 bit

CONFIGURATION MEMORY

1

3

1

44

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX1

3-STATE

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

SERIAL

240

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

25LC512-M/SN by Microchip Technology

25LC512-M/SN

Microchip Technology

25LC512-M/SN by Microchip is a serial EEPROM with 64KX8 organization, operating at up to 10 MHz. It has a MILITARY temperature grade and offers 1000000 Write/Erase cycles. Ideal for applications requiring reliable non-volatile memory in harsh environments.

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

524288 bit

EEPROM

8

1

1

1

8

65536 words

64K

SYNCHRONOUS

125 Cel

-55 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

5

TS 16949

1.75 mm

SPI

.00002 Amp

10 mA

5.5 V

2.5 V

5

YES

CMOS

MILITARY

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

25LC512T-M/SN by Microchip Technology

25LC512T-M/SN

Microchip Technology

25LC512T-M/SN by Microchip Technology is a 64KX8 EEPROM with SPI serial bus type, operating at 5V. It offers 1000000 write/erase cycles, -55 to 125 °C temperature range, and synchronous operation. Ideal for applications requiring small outline package style and high endurance memory.

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

524288 bit

EEPROM

8

3

1

1

8

65536 words

64K

SYNCHRONOUS

125 Cel

-55 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

5

TS 16949

1.75 mm

SPI

.00002 Amp

10 mA

5.5 V

2.5 V

5

YES

CMOS

MILITARY

MATTE TIN

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

AT28BV256-20SC by Atmel

AT28BV256-20SC

Atmel

AT28BV256-20SC by Atmel is a 32Kx8 EEPROM with 262144-bit memory density. It operates at 3V, has a max access time of 200ns, and supports asynchronous mode. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

200 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDSO-G28

e0

17.9 mm

262144 bit

EEPROM

8

2

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.4

RECTANGULAR

SMALL OUTLINE

64

PARALLEL

240

3/3.3

3

Not Qualified

2.65 mm

.00002 Amp

EEPROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

YES

7.5 mm

10 ms

AT28BV256-20SI by Atmel

AT28BV256-20SI

Atmel

Atmel's AT28BV256-20SI is a 32Kx8 EEPROM with 3V nominal voltage, operating in industrial temperature range. It offers 10,000 write/erase cycles, 200ns access time, and supports hardware/software write protection. Ideal for applications requiring reliable non-volatile memory storage in compact designs.

200 ns

AUTOMATIC WRITE

NO

YES

10

10000 Write/Erase Cycles

R-PDSO-G28

e0

17.9 mm

262144 bit

EEPROM

8

2

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.4

RECTANGULAR

SMALL OUTLINE

64

PARALLEL

240

3/3.3

3

Not Qualified

2.65 mm

.00005 Amp

EEPROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

YES

7.5 mm

10 ms

HARDWARE/SOFTWARE

AT28BV256-20TI by Atmel

AT28BV256-20TI

Atmel

AT28BV256-20TI by Atmel is a 32Kx8 EEPROM with 262144-bit memory density. It operates at 3V, has a max access time of 200ns, and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factors.

200 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDSO-G28

e0

11.8 mm

262144 bit

EEPROM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

64

PARALLEL

240

3/3.3

3

Not Qualified

1.2 mm

.00005 Amp

EEPROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.55 mm

DUAL

YES

8 mm

10 ms

FM93CS56LN by Fairchild Semiconductor

FM93CS56LN

Fairchild Semiconductor

FM93CS56LN by Fairchild Semiconductor is a 2048-bit EEPROM with 128x16 organization. It operates at 0.25 MHz clock frequency and has a max write cycle time of 15 ms. Suitable for applications requiring low power consumption and reliable non-volatile memory storage.

.25 MHz

40

1000000 Write/Erase Cycles

R-PDIP-T8

e0

9.817 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

70 Cel

0 Cel

128X16

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.08 mm

MICROWIRE

.00001 Amp

EEPROMs

1 mA

5.5 V

2.7 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

15 ms

HARDWARE/SOFTWARE

M34C02-LDW6T by STMicroelectronics

M34C02-LDW6T

STMicroelectronics

M34C02-LDW6T by STMicroelectronics is a compact EEPROM with a 256x8 organization, operating at 2.5V to 5.5V and featuring I2C control for easy integration. It supports up to 1M write/erase cycles and operates in temperatures from -40 °C to 85°C. Ideal for industrial applications requiring reliable data retention and low power consumption.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e0

4.4 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2.5/5

Not Qualified

1.2 mm

I2C

.0000005 Amp

EEPROMs

2 mA

5.5 V

2.2 V

2.5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.65 mm

DUAL

3 mm

10 ms

HARDWARE/SOFTWARE

24AA128-I/SM by Microchip Technology

24AA128-I/SM

Microchip Technology

24AA128-I/SM by Microchip Technology is an EEPROM with 16KX8 organization, I2C serial bus type, and 1000000 Write/Erase Cycles endurance. It operates at a max clock frequency of 0.4 MHz and is ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.26 mm

131072 bit

EEPROM

8

1

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

2.03 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

24AA64T-I/SM by Microchip Technology

24AA64T-I/SM

Microchip Technology

24AA64T-I/SM by Microchip Tech is an EEPROM with 8KX8 organization, 65536-bit memory density, and 1000000 write/erase cycles. It operates at -40 to 85 °C, has a max clock frequency of 0.4 MHz, and uses I2C serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage.

DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.245 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

4.5

Not Qualified

AEC-Q100

2.03 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

24LC64-E/SM by Microchip Technology

24LC64-E/SM

Microchip Technology

24LC64-E/SM by Microchip Technology is an EEPROM with 8KX8 organization, operating at 4.5V and -40 to 125 °C temperature range. It features I2C control byte 1010DDDR, offers 1000000 Write/Erase cycles endurance, and is ideal for automotive applications due to AEC-Q100 screening level.

DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.245 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

4.5

Not Qualified

AEC-Q100

2.03 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

24LC64T-E/SM by Microchip Technology

24LC64T-E/SM

Microchip Technology

24LC64T-E/SM by Microchip Technology is an EEPROM with 8KX8 organization, 65536 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates in synchronous mode at a max clock frequency of 0.4 MHz and is ideal for automotive applications requiring reliable non-volatile memory storage.

DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.245 mm

65536 bit

EEPROM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

4.5

Not Qualified

AEC-Q100

2.03 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

XC18V01PC20C by Xilinx

XC18V01PC20C

Xilinx

XC18V01PC20C by Xilinx is a 128KX8 EEPROM chip carrier with 33 MHz clock frequency, operating at -40 to 85 °C. It has 20000 write/erase cycles, supports parallel/serial mode, and offers 1048576-bit memory density. Ideal for industrial applications requiring reliable configuration memory with a max standby current of 0.01 Amp.

15 ns

33 MHz

20

20000 Write/Erase Cycles

S-PQCC-J20

e0

8.9662 mm

1048576 bit

CONFIGURATION MEMORY

8

3

1

20

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

NOR TYPE

8.9662 mm

XC18V01PC20I by Xilinx

XC18V01PC20I

Xilinx

Xilinx XC18V01PC20I is a 128Kx8 EEPROM with NOR type technology. Operating at 3.3V, it offers 33MHz clock frequency and 10000 write/erase cycles. Ideal for industrial applications requiring configuration memory with parallel/serial interface and -40 to 85°C temperature range.

15 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQCC-J20

e0

8.9662 mm

1048576 bit

CONFIGURATION MEMORY

8

3

1

20

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

NOR TYPE

8.9662 mm

XC18V01SO20C by Xilinx

XC18V01SO20C

Xilinx

XC18V01SO20C by Xilinx is a 128Kx8 EEPROM with NOR type technology. It operates at 33 MHz clock frequency, has 20000 write/erase cycles endurance, and supports parallel/serial mode. Ideal for industrial applications requiring small outline package, it offers 1048576-bit memory density and -40 to 85°C operating temperature range.

15 ns

33 MHz

20

20000 Write/Erase Cycles

R-PDSO-G20

e0

12.827 mm

1048576 bit

CONFIGURATION MEMORY

8

3

1

20

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

2.6416 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5184 mm

XC18V01SO20I by Xilinx

XC18V01SO20I

Xilinx

XC18V01SO20I by Xilinx is a 128Kx8 EEPROM with 33MHz clock frequency, operating at -40 to 85°C. Ideal for industrial applications, it offers NOR type technology, 10000 write/erase cycles endurance, and supports parallel/serial operation.

15 ns

33 MHz

10

10000 Write/Erase Cycles

R-PDSO-G20

e0

12.8 mm

1048576 bit

CONFIGURATION MEMORY

8

3

1

20

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

2.65 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

XC18V01VQ44C by Xilinx

XC18V01VQ44C

Xilinx

XC18V01VQ44C by Xilinx is a 128KX8 EEPROM with 3.3V nominal voltage, operating at up to 33 MHz clock frequency. It features NOR type technology, industrial temperature grade, and supports parallel/serial operation. Ideal for applications requiring configuration memory with 20000 write/erase cycles endurance and fast access time of 15 ns.

15 ns

33 MHz

20

20000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

1048576 bit

CONFIGURATION MEMORY

8

3

1

44

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V01VQ44I by Xilinx

XC18V01VQ44I

Xilinx

The Xilinx XC18V01VQ44I is a 128Kx8 EEPROM with 3.3V nominal voltage, operating at up to 33MHz clock frequency. It features NOR type technology, industrial temperature grade, and offers 10000 write/erase cycles. Ideal for configuration memory applications requiring high endurance and fast access times in industrial environments.

15 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

1048576 bit

CONFIGURATION MEMORY

8

3

1

44

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V02PC44C by Xilinx

XC18V02PC44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Package Style (Meter): CHIP CARRIER;

20 ns

20 MHz

20

20000 Write/Erase Cycles

S-PQCC-J44

e0

16.5862 mm

2097152 bit

CONFIGURATION MEMORY

8

3

1

44

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

NOR TYPE

16.5862 mm

XC18V02PC44I by Xilinx

XC18V02PC44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Parallel or Serial: PARALLEL/SERIAL;

20 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQCC-J44

e0

16.5862 mm

2097152 bit

CONFIGURATION MEMORY

8

3

1

44

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

NOR TYPE

16.5862 mm

XC18V02VQ44C by Xilinx

XC18V02VQ44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Power Supplies (V): 2.5/3.3,3.3;

20 ns

20 MHz

20

20000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

2097152 bit

CONFIGURATION MEMORY

8

3

1

44

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm