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EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.

EEPROM

Available Parts 850

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
BR34E02FVT-WE2 by ROHM

BR34E02FVT-WE2

ROHM

BR34E02FVT-WE2 by ROHM is an EEPROM with 256x8 organization, operating at 2.5V, and offering 1000000 write/erase cycles. It has a small outline package style, suitable for industrial applications requiring low power consumption and serial bus communication via I2C control byte.

.1 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

4.4 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

LSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

SERIAL

260

1.8/3.3

Not Qualified

1.25 mm

I2C

.000002 Amp

EEPROMs

3 mA

3.6 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

PURE TIN

GULL WING

.65 mm

DUAL

10

3 mm

5 ms

HARDWARE/SOFTWARE

M24C04-FMB5TG by STMicroelectronics

M24C04-FMB5TG

STMicroelectronics

M24C04-FMB5TG from STMicroelectronics is a 4096-bit EEPROM with a synchronous operating mode and I2C interface. It features a wide supply voltage range (1.8-5V), operates at temperatures from -20 °C to 85 °C, and supports up to 1M write/erase cycles. Ideal for compact applications requiring reliable data storage in small electronic devices.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-N8

e4

3 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-20 Cel

512X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.7 V

2.5

YES

CMOS

OTHER

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE

M24C08-FMB5TG by STMicroelectronics

M24C08-FMB5TG

STMicroelectronics

M24C08-FMB5TG from STMicroelectronics is a 1Kx8 EEPROM with I2C interface, ideal for low-power applications. It operates at 1.8-5V, supports up to 1M write/erase cycles, and features a compact SOIC package. Its max temp is 85 °C, making it suitable for various electronic devices.

1

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDSO-N8

e4

3 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-20 Cel

1KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.7 V

5

YES

CMOS

OTHER

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE

BR93C56-WMN6TP by ROHM

BR93C56-WMN6TP

ROHM

ROHM's BR93C56-WMN6TP is a 2Kx1 EEPROM with a max clock frequency of 2MHz. It operates at temperatures ranging from -40 to 85°C and has an endurance of 1,000,000 write/erase cycles. This memory IC is commonly used in industrial applications requiring reliable data storage.

2 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

2048 bit

EEPROM

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX1

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/5

Not Qualified

1.75 mm

MICROWIRE

.000005 Amp

EEPROMs

2 mA

5.5 V

2.5 V

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

5 ms

SOFTWARE

BR25L160FVT-WE2 by ROHM

BR25L160FVT-WE2

ROHM

BR25L160FVT-WE2 by ROHM is an EEPROM with 2Kx8 organization, SPI serial bus type, and 5 MHz clock frequency. It operates at -40 to 85 °C, has a 1.25 mm seated height, and offers 1000000 write/erase cycles. Ideal for industrial applications requiring low-profile memory solutions.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e2

4.4 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

LSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

1.25 mm

SPI

.000002 Amp

EEPROMs

3 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

TIN COPPER

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE/SOFTWARE

BR25L640FJ-WE2 by ROHM

BR25L640FJ-WE2

ROHM

BR25L640FJ-WE2 by ROHM is an 8Kx8 EEPROM with SPI serial bus, 5 MHz clock frequency, and 1000000 write/erase cycles. Ideal for industrial applications requiring a small outline package and operating temperature range of -40 to 85°C.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e2

4.9 mm

65536 bit

EEPROM

8

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

2/5

Not Qualified

1.65 mm

SPI

.000002 Amp

EEPROMs

3 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

TIN COPPER

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

BR24L08F-WE2 by ROHM

BR24L08F-WE2

ROHM

BR24L08F-WE2 by ROHM is an 8-terminal EEPROM with 1Kx8 organization, operating at 2.5V and featuring I2C control byte for hardware write protection. With a memory density of 8192 bits, it's ideal for industrial applications requiring reliable data storage and retrieval at temperatures ranging from -40 to 85°C.

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDSO-G8

e2

5 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.78 mm

I2C

.000002 Amp

EEPROMs

2 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

TIN COPPER

GULL WING

1.27 mm

DUAL

10

4.4 mm

5 ms

HARDWARE

M24512-HRMN6P by STMicroelectronics

M24512-HRMN6P

STMicroelectronics

M24512-HRMN6P by STMicroelectronics is a 64Kx8 EEPROM with a synchronous operating mode, ideal for industrial applications. It operates at 2.5V nominal and supports I2C communication, ensuring efficient data transfer. With a max temp of 85 °C and 1M write/erase cycles, it’s reliable for demanding environments.

1 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

2/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

M24512-HRMN6TP by STMicroelectronics

M24512-HRMN6TP

STMicroelectronics

M24512-HRMN6TP by STMicroelectronics is a 64Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w 1.8V to 5.5V, supports up to 1 MHz clock frequency, and endures 1M write/erase cycles. Ideal for industrial applications requiring reliable data retention in compact designs.

1 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

2/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

5 ms

HARDWARE

24LC01BT-E/MNY by Microchip Technology

24LC01BT-E/MNY

Microchip Technology

24LC01BT-E/MNY by Microchip Technology is an EEPROM with 128x8 organization, 1024-bit memory density, and AEC-Q100 screening for automotive applications. It operates at 5V with a max clock frequency of 0.4 MHz and offers 1,000,000 write/erase cycles endurance.

.4 MHz

200

1000000 Write/Erase Cycles

1010XXXR

R-PDSO-N8

e4

3 mm

1024 bit

EEPROM

8

1

1

1

8

128 words

128

SYNCHRONOUS

125 Cel

-40 Cel

128X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

5

Not Qualified

AEC-Q100

.8 mm

I2C

.000005 Amp

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE

24LC02BT-E/MNY by Microchip Technology

24LC02BT-E/MNY

Microchip Technology

24LC02BT-E/MNY by Microchip Technology is an EEPROM with 256x8 organization, 2048-bit memory density, and AEC-Q100 screening level. It operates at 5V, has a max clock frequency of 0.4 MHz, and is suitable for automotive applications due to its temperature grade.

.4 MHz

200

1000000 Write/Erase Cycles

1010XXXR

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

125 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/5

5

Not Qualified

AEC-Q100

.8 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE

24AA16HT-I/SN by Microchip Technology

24AA16HT-I/SN

Microchip Technology

24AA16HT-I/SN by Microchip Tech is an EEPROM with 256x8 organization, I2C control byte 1010MMMR, and 1000000 write/erase cycles. It operates at -40 to 85 °C, has a max clock frequency of 0.1 MHz, and is used in industrial applications for serial data storage.

.1 MHz

200

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G8

e3

4.9 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/5

2.5

Not Qualified

TS 16949

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

24LC04BHT-E/SN by Microchip Technology

24LC04BHT-E/SN

Microchip Technology

24LC04BHT-E/SN by Microchip Technology is an EEPROM with 512x8 organization, operating at 5V. It features I2C control byte 1010XXMR and offers hardware write protection. With a memory density of 4096 bit, it's ideal for automotive applications due to AEC-Q100 screening level and -40 to 125°C operating temperature range.

.4 MHz

YES

200

1000000 Write/Erase Cycles

1010XXMR

R-PDSO-G8

e3

4.9 mm

4096 bit

EEPROM

8

1

1

1

8

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

16

SERIAL

260

3/5

5

Not Qualified

AEC-Q100

1.75 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

24LC16BHT-E/OT by Microchip Technology

24LC16BHT-E/OT

Microchip Technology

24LC16BHT-E/OT by Microchip Technology is a 2Kx8 EEPROM with I2C serial bus, 16384-bit memory density, and AEC-Q100 screening for automotive applications. It operates at 5V with synchronous mode, offering 1000000 write/erase cycles and -40 to 125°C temperature range. Ideal for hardware write protection in compact designs.

.4 MHz

200

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G5

e3

2.9 mm

16384 bit

EEPROM

8

1

1

1

5

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

OPEN-DRAIN

PLASTIC/EPOXY

LSSOP

TSOP5/6,.11,37

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

AEC-Q100

1.45 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

.95 mm

DUAL

40

1.55 mm

5 ms

HARDWARE

24VL014H/SN by Microchip Technology

24VL014H/SN

Microchip Technology

24VL014H/SN by Microchip Technology is an EEPROM with 128x8 organization, operating at 2.5V. It features I2C control byte 1010DDDR and offers 1,000,000 write/erase cycles endurance. Ideal for applications requiring small outline package style and synchronous operation up to 0.4 MHz clock frequency.

1.5V TO 1.8V @ 0.1MHz

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

4.9 mm

1024 bit

EEPROM

8

1

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-20 Cel

128X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/3,3

2.5

Not Qualified

TS 16949

1.75 mm

I2C

.000001 Amp

EEPROMs

3 mA

3.6 V

1.8 V

2.5

YES

CMOS

OTHER

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

CAT24AA04TDI-GT3 by Onsemi

CAT24AA04TDI-GT3

Onsemi

CAT24AA04TDI-GT3 by Onsemi is a 512x8 EEPROM with I2C control byte. Operating at 1.8V, it offers 1000000 write/erase cycles and -40 to 85°C temperature range. Ideal for industrial applications requiring small footprint and low power consumption.

.4 MHz

100

1000000 Write/Erase Cycles

101000MR

R-PDSO-G5

e4

2.9 mm

4096 bit

EEPROM

8

1

1

5

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

VSSOP

TSOP5/6,.11,37

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8/5

Not Qualified

1 mm

I2C

.000001 Amp

EEPROMs

1 mA

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.95 mm

DUAL

30

1.6 mm

5 ms

HARDWARE

CAT24AA04WI-GT3 by Onsemi

CAT24AA04WI-GT3

Onsemi

CAT24AA04WI-GT3 by Onsemi is an EEPROM with 512x8 organization, operating at 1.8V, and offering 1000000 write/erase cycles. It is ideal for industrial applications requiring a small outline package, synchronous operation, and I2C serial bus communication.

.4 MHz

100

1000000 Write/Erase Cycles

101000MR

R-PDSO-G8

e4

4.9 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

1 mA

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

CAT24AA08WI-GT3 by Onsemi

CAT24AA08WI-GT3

Onsemi

CAT24AA08WI-GT3 by Onsemi is an 8-terminal EEPROM with 1KX8 organization, operating at 1.8V and 5V. It features I2C control byte, hardware write protection, and endurance of 1M cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

.4 MHz

100

1000000 Write/Erase Cycles

10100MMR

R-PDSO-G8

e4

4.9 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

1 mA

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

CAT25640HU3I-GT3 by Onsemi

CAT25640HU3I-GT3

Onsemi

CAT25640HU3I-GT3 by Onsemi is an 8KX8 EEPROM with SPI serial bus, 20 MHz clock frequency, and 1000000 write/erase cycles. It operates at -40 to 85 °C for industrial applications requiring reliable non-volatile memory storage in a compact, low-power package.

100 YEAR DATA RETENTION

20 MHz

100

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.55 mm

SPI

.000001 Amp

EEPROMs

3 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE/SOFTWARE

24AA08T-I/MNY by Microchip Technology

24AA08T-I/MNY

Microchip Technology

24AA08T-I/MNY by Microchip Tech is an EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 write/erase cycles. It operates in industrial temperature grade, has I2C serial bus type, and offers hardware write protection. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

1.7V TO 2.5V @ 0.1MHz

.4 MHz

200

1000000 Write/Erase Cycles

1010XMMR

R-PDSO-N8

e4

3 mm

8192 bit

EEPROM

8

1

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

.8 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

40

2 mm

5 ms

HARDWARE

M24M01-HRMN6P by STMicroelectronics

M24M01-HRMN6P

STMicroelectronics

M24M01-HRMN6P by STMicroelectronics is a 256Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w 1.8V to 5.5V, supports up to 1 MHz clock frequency, and endures over 1 million write/erase cycles. Ideal for industrial applications requiring reliable data storage in compact designs.

1 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e4

4.9 mm

2097152 bit

EEPROM

8

1

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

M24M01-HRMN6TP by STMicroelectronics

M24M01-HRMN6TP

STMicroelectronics

M24M01-HRMN6TP by STMicroelectronics is a 256Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w -40 °C to 85°C, supporting supply voltages from 1.8V to 5.5V. Ideal for industrial applications, it offers high endurance with up to 1M write/erase cycles.

1 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e4

4.9 mm

2097152 bit

EEPROM

8

1

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

24AA1026-I/P by Microchip Technology

24AA1026-I/P

Microchip Technology

24AA1026-I/P by Microchip Technology is an EEPROM with 128KX8 organization, operating at 2.5V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and can endure 1M write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e3

9.271 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

1.8/5

2.5

Not Qualified

TS 16949

5.334 mm

I2C

.000005 Amp

EEPROMs

5 mA

5.5 V

1.7 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

24AA1026-I/SM by Microchip Technology

24AA1026-I/SM

Microchip Technology

24AA1026-I/SM by Microchip Tech is an EEPROM with 128KX8 organization, 1048576 bit memory density, and 1000000 Write/Erase cycles. Operating in industrial temperature range (-40 to 85 °C), it uses I2C serial bus for applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e3

5.26 mm

1048576 bit

EEPROM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/5

2.5

Not Qualified

TS 16949

2.03 mm

I2C

.000005 Amp

EEPROMs

5 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

24AA1026T-I/SM by Microchip Technology

24AA1026T-I/SM

Microchip Technology

24AA1026T-I/SM by Microchip Technology is an EEPROM with 128KX8 organization, operating at 2.5V, and featuring I2C serial bus type. It has a max clock frequency of 0.4 MHz and can endure 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e3

5.26 mm

1048576 bit

EEPROM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/5

2.5

Not Qualified

TS 16949

2.03 mm

I2C

.000005 Amp

EEPROMs

5 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

24AA1026T-I/SN by Microchip Technology

24AA1026T-I/SN

Microchip Technology

24AA1026T-I/SN by Microchip Technology is an EEPROM with 128KX8 organization, operating at 2.5V and featuring I2C control byte 1010DDMR. It has a max clock frequency of 0.4 MHz and can endure up to 1,000,000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e3

4.9 mm

1048576 bit

EEPROM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/5

2.5

Not Qualified

TS 16949

1.75 mm

I2C

.000005 Amp

EEPROMs

5 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

24FC1026-I/P by Microchip Technology

24FC1026-I/P

Microchip Technology

24FC1026-I/P by Microchip Technology is an 8-terminal EEPROM with 128KX8 organization, operating at 2.5V and up to 1MHz clock frequency. It features I2C control byte for hardware write protection and offers industrial temperature grade suitability. Ideal for applications requiring reliable non-volatile memory storage in various electronic devices.

1 MHz

200

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e3

9.271 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

2.5

Not Qualified

TS 16949

5.334 mm

I2C

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24256-BHRDW6TP by STMicroelectronics

M24256-BHRDW6TP

STMicroelectronics

M24256-BHRDW6TP by STMicroelectronics is a 32Kx8 EEPROM with a compact SOIC package, operating b/w -40 °C to 85°C. It features synchronous I2C communication and hardware write protection, making it ideal for industrial applications requiring reliable data storage. With a max clock frequency of 1 MHz and endurance of 1M cycles, it's perfect for demanding environments.

1 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

4.4 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

NOT SPECIFIED

2/5

Not Qualified

1.2 mm

I2C

.000002 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

NOT SPECIFIED

3 mm

5 ms

HARDWARE

M24256-BHRMN6P by STMicroelectronics

M24256-BHRMN6P

STMicroelectronics

M24256-BHRMN6P by STMicroelectronics is a 32Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w 1.8V to 5.5V, supports up to 1 MHz clock frequency, and features hardware write protection. Ideal for industrial applications requiring reliable data retention from -40 °C to 85°C.

1 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

4.9 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

5 ms

HARDWARE

M24256-BHRMN6TP by STMicroelectronics

M24256-BHRMN6TP

STMicroelectronics

M24256-BHRMN6TP by STMicroelectronics is a 32Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w 1.8V to 5.5V, supports up to 1 MHz clock frequency, and features hardware write protection. Ideal for industrial applications requiring reliable data retention at extreme temperatures (-40 °C to 85°C).

1 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

4.9 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2/5

Not Qualified

1.75 mm

I2C

.000002 Amp

EEPROMs

5 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

5 ms

HARDWARE

M24128-BFMB6TG by STMicroelectronics

M24128-BFMB6TG

STMicroelectronics

M24128-BFMB6TG by STMicroelectronics is a 16Kx8 EEPROM with a synchronous operating mode, ideal for industrial applications. It operates at a nominal voltage of 1.8V and supports I2C communication. With a max temp of 85 °C and endurance of 1M write/erase cycles, it's reliable for data storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-XDSO-N8

e4

3 mm

131072 bit

EEPROM

8

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

UNSPECIFIED

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE

M24C32-FMB5TG by STMicroelectronics

M24C32-FMB5TG

STMicroelectronics

M24C32-FMB5TG by STMicroelectronics is a 32Kb EEPROM with I2C interface, ideal for automotive applications due to its AEC-Q100 screening. It operates at a nominal voltage of 1.8V and supports up to 1M write/erase cycles. Its compact design features an ultra-thin profile of just 0.6mm height.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

3 mm

32768 bit

EEPROM

8

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-20 Cel

4KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8/5

Not Qualified

AEC-Q100

.6 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

1.8

YES

CMOS

OTHER

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

5 ms

HARDWARE

M24C64-FMB6TG by STMicroelectronics

M24C64-FMB6TG

STMicroelectronics

M24C64-FMB6TG from STMicroelectronics is a compact 64Kb EEPROM with I2C interface, ideal for industrial applications. It operates at 1.8-5.5V, features a max clock frequency of 400kHz, and offers 1M write/erase cycles. Its small outline design ensures efficient space utilization in devices.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

3 mm

65536 bit

EEPROM

8

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

5 ms

HARDWARE

M24C64-RMB6TG by STMicroelectronics

M24C64-RMB6TG

STMicroelectronics

M24C64-RMB6TG by STMicroelectronics is a compact EEPROM with 8Kx8 organization, operating b/w 1.8V and 5.5V. It features a max clock frequency of 400kHz and offers hardware write protection for reliable data storage. Ideal for industrial applications requiring robust memory solutions.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-XDSO-N8

3 mm

65536 bit

EEPROM

8

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

UNSPECIFIED

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

2/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

5 ms

HARDWARE

M95128-RMB6TG by STMicroelectronics

M95128-RMB6TG

STMicroelectronics

STMicroelectronics M95128-RMB6TG is a 16KX8 EEPROM with SPI serial bus, 131072-bit memory density, and 1000000 write/erase cycles. Operating at -40 to 85 °C, it has a max clock frequency of 2 MHz and supports hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

2 MHz

40

1000000 Write/Erase Cycles

R-XDSO-N8

e4

3 mm

131072 bit

EEPROM

8

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

UNSPECIFIED

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.6 mm

SPI

.000003 Amp

EEPROMs

3 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE/SOFTWARE

M95256-RCS6TP/A by STMicroelectronics

M95256-RCS6TP/A

STMicroelectronics

M95256-RCS6TP/A by STMicroelectronics is a 32Kx8 EEPROM with a max clock frequency of 2 MHz and operates b/w 1.8V to 5.5V. Its compact design features an industrial temp range (-40 °C to 85 °C) and supports hardware/software write protection, ideal for embedded applications.

2 MHz

40

1000000 Write/Erase Cycles

R-PBGA-B8

1.97 mm

262144 bit

EEPROM

8

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

VFBGA

BGA8,3X5,17/10

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

2/5

Not Qualified

.65 mm

SPI

.000003 Amp

EEPROMs

3 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

1.785 mm

5 ms

HARDWARE/SOFTWARE

M24C32S-FCU6T/T by STMicroelectronics

M24C32S-FCU6T/T

STMicroelectronics

M24C32S-FCU6T/T by STMicroelectronics is a 32Kb EEPROM with a 1.8V nominal voltage and operates in synchronous mode. It features a very thin profile, I2C serial bus, and supports temperatures from -40 °C to 85 °C. Ideal for industrial applications requiring compact memory solutions.

1 MHz

S-PBGA-B4

.833 mm

32768 bit

EEPROM

8

1

4

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

.3 mm

I2C

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.4 mm

BOTTOM

NOT SPECIFIED

.833 mm

5 ms

M24C64S-FCU6T/T by STMicroelectronics

M24C64S-FCU6T/T

STMicroelectronics

M24C64S-FCU6T/T by STMicroelectronics is a 64Kb EEPROM with I2C interface, ideal for industrial applications. It operates at a supply voltage of 1.8V to 5.5V and features a max clock frequency of 1 MHz. Its compact design ensures efficient use in space-constrained environments.

1 MHz

S-PBGA-B4

.833 mm

65536 bit

EEPROM

8

1

4

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

.3 mm

I2C

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.4 mm

BOTTOM

NOT SPECIFIED

.833 mm

5 ms

PCA24S08D,112 by NXP Semiconductors

PCA24S08D,112

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Serial Bus Type: I2C;

.4 MHz

10

100000 Write/Erase Cycles

10101MMR

R-PDSO-G8

e4

4.9 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

Not Qualified

1.75 mm

I2C

.000015 Amp

EEPROMs

1 mA

3.6 V

2.5 V

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

HARDWARE/SOFTWARE

PCA8581CT/6,118 by NXP Semiconductors

PCA8581CT/6,118

NXP Semiconductors

EEPROM; Temperature Grade: OTHER; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.5 V;

8 BYTE PAGE WRITE; DATA RETENTION = 10 YEARS

10

10000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

1024 bit

EEPROM

8

1

8

128 words

128

SYNCHRONOUS

85 Cel

-25 Cel

128X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

.00001 Amp

EEPROMs

1 mA

6 V

2.5 V

YES

CMOS

OTHER

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

PCA8581P/F6,112 by NXP Semiconductors

PCA8581P/F6,112

NXP Semiconductors

EEPROM; Temperature Grade: OTHER; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

10 YEAR OF DATA RETENTION

10

10000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e4

9.5 mm

1024 bit

EEPROM

8

1

8

128 words

128

SYNCHRONOUS

85 Cel

-25 Cel

128X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

5

5

Not Qualified

4.2 mm

I2C

.00001 Amp

EEPROMs

1 mA

5.5 V

4.5 V

5

NO

CMOS

OTHER

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

PCA8581T/6,118 by NXP Semiconductors

PCA8581T/6,118

NXP Semiconductors

EEPROM; Temperature Grade: OTHER; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 4.5 V;

8 BYTE PAGE WRITE; DATA RETENTION = 10 YEARS

10

10000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

1024 bit

EEPROM

8

1

8

128 words

128

SYNCHRONOUS

85 Cel

-25 Cel

128X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

5

Not Qualified

1.75 mm

I2C

.00001 Amp

EEPROMs

1 mA

5.5 V

4.5 V

5

YES

CMOS

OTHER

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

PCF85102C-2P/03,11 by NXP Semiconductors

PCF85102C-2P/03,11

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Finish: NICKEL PALLADIUM GOLD;

.1 MHz

10

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e4

9.5 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

4.2 mm

I2C

.0000035 Amp

EEPROMs

2 mA

6 V

2.5 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

PCF85103C-2P/00,11 by NXP Semiconductors

PCF85103C-2P/00,11

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.5 V;

.1 MHz

10

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e4

9.5 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

4.2 mm

I2C

.0000035 Amp

EEPROMs

2 mA

6 V

2.5 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

PCF85116-3P/01,112 by NXP Semiconductors

PCF85116-3P/01,112

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Organization: 2KX8;

.4 MHz

20

1000000 Write/Erase Cycles

1010MMMR

R-PDIP-T8

e4

9.5 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

4.2 mm

I2C

EEPROMs

5.5 V

2.7 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms

HARDWARE

PCF85116-3T/01,112 by NXP Semiconductors

PCF85116-3T/01,112

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Write Cycle Time (tWC): 10 ms;

.4 MHz

20

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G8

e4

4.9 mm

16384 bit

EEPROM

8

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

EEPROMs

5.5 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE

PCF85116-3T/01,118 by NXP Semiconductors

PCF85116-3T/01,118

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; JESD-609 Code: e4;

.4 MHz

20

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-G8

e4

4.9 mm

16384 bit

EEPROM

8

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

1.75 mm

I2C

EEPROMs

5.5 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

10 ms

HARDWARE

PCF8582C-2P/03,112 by NXP Semiconductors

PCF8582C-2P/03,112

NXP Semiconductors

NXP Semiconductors' PCF8582C-2P/03,112 is an 8-terminal EEPROM with a 256x8 organization and operates synchronously at up to 0.1 MHz. It uses I2C serial bus for control and has a memory density of 2048 bits. Ideal for industrial applications requiring reliable non-volatile memory storage.

.1 MHz

10

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e4

9.5 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

4.2 mm

I2C

.0000035 Amp

EEPROMs

2 mA

6 V

2.5 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

10 ms