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EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.

EEPROM

Available Parts 850

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
24AA025-I/P by Microchip Technology

24AA025-I/P

Microchip Technology

24AA025-I/P by Microchip Technology is an EEPROM with 256x8 organization, I2C control byte 1010DDDR, and 2048-bit memory density. It operates in synchronous mode at a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable data storage with up to 1000000 write/erase cycles.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.271 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

2.5

Not Qualified

TS 16949

5.334 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

25LC1024T-E/MF by Microchip Technology

25LC1024T-E/MF

Microchip Technology

25LC1024T-E/MF by Microchip Technology is a 128KX8 EEPROM with AEC-Q100 screening. Operating at 5V, it offers 10 MHz clock frequency and supports SPI serial bus. Ideal for automotive applications, it has 1mm max seated height and endures 1M Write/Erase cycles.

200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

1048576 bit

EEPROM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

125 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/5

5

Not Qualified

AEC-Q100

1 mm

SPI

.00002 Amp

Flash Memories

10 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

NO LEAD

1.27 mm

DUAL

40

NOR TYPE

5 mm

6 ms

HARDWARE/SOFTWARE

M24256-BWMW6G by STMicroelectronics

M24256-BWMW6G

STMicroelectronics

M24256-BWMW6G by STMicroelectronics is a 32Kx8 EEPROM with I2C interface, ideal for industrial applications. It operates at 3-5V, features hardware write protection, and endures up to 1M write/erase cycles. Its compact SOIC package ensures efficient space utilization.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.62 mm

262144 bit

EEPROM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

3/5

Not Qualified

2.5 mm

I2C

.000002 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

5.62 mm

5 ms

HARDWARE

M24256-BWMW6TG by STMicroelectronics

M24256-BWMW6TG

STMicroelectronics

M24256-BWMW6TG by STMicroelectronics is a 32Kx8 EEPROM with a synchronous operating mode and I2C interface. It features a wide supply voltage range (2.5V-5.5V) and robust endurance of 1M write/erase cycles, making it ideal for industrial applications. Its compact SO package ensures efficient space utilization in electronic designs.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.62 mm

262144 bit

EEPROM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

2.5 mm

I2C

.000002 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

5.62 mm

5 ms

HARDWARE

M24C01-RDS6G by STMicroelectronics

M24C01-RDS6G

STMicroelectronics

M24C01-RDS6G from STMicroelectronics is a 1024-bit EEPROM with I2C interface, ideal for industrial applications. It operates at a supply voltage of 1.8V to 5.5V and features a max clock frequency of 400 kHz. With a temperature range of -40 °C to 85 °C, it ensures reliability in harsh environments.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e4

3 mm

1024 bit

EEPROM

8

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

1.1 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

M24C01-RDS6TG by STMicroelectronics

M24C01-RDS6TG

STMicroelectronics

M24C01-RDS6TG from STMicroelectronics is a 1024-bit EEPROM with I2C interface, ideal for industrial applications. It operates at 1.8V to 5.5V and supports up to 1M write/erase cycles. With a compact size of 3mm x 3mm, it ensures efficient space utilization in designs.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e4

3 mm

1024 bit

EEPROM

8

1

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

1.1 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

M24C01-WBN6P by STMicroelectronics

M24C01-WBN6P

STMicroelectronics

M24C01-WBN6P by STMicroelectronics is an EEPROM with 1024-bit memory density, operating at a max clock frequency of 0.4 MHz. It features I2C serial bus type and offers 1000000 write/erase cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact rectangular package style.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.27 mm

1024 bit

EEPROM

8

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C02-RDS6G by STMicroelectronics

M24C02-RDS6G

STMicroelectronics

M24C02-RDS6G from STMicroelectronics is a 2048-bit EEPROM with I2C interface, ideal for industrial applications. It operates at a supply voltage of 1.8V to 5.5V and features a max clock frequency of 400 kHz. With a temperature range of -40 °C to 85 °C, it ensures reliability in harsh environments.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e4

3 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

1.1 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

10 ms

HARDWARE

M24C02-RDS6TG by STMicroelectronics

M24C02-RDS6TG

STMicroelectronics

M24C02-RDS6TG from STMicroelectronics is a 2048-bit EEPROM with I2C interface, ideal for industrial applications. It operates at a supply voltage of 2.5V and features a max clock frequency of 0.4 MHz. With a temperature range of -40 °C to 85 °C, it ensures reliability in harsh environments.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e4

3 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

1.1 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

10 ms

HARDWARE

M24C02-RMB6TG by STMicroelectronics

M24C02-RMB6TG

STMicroelectronics

STMicroelectronics M24C02-RMB6TG is an EEPROM with 256x8 organization, I2C serial bus type, and 2048-bit memory density. It operates at a max clock frequency of 0.4 MHz and has a write protection feature for hardware security. Ideal for industrial applications requiring reliable non-volatile memory storage in compact designs.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE

M24C02-WBN6P by STMicroelectronics

M24C02-WBN6P

STMicroelectronics

M24C02-WBN6P by STMicroelectronics is an EEPROM with 256x8 organization, operating at 5V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact rectangular package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.27 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C04-RDS6G by STMicroelectronics

M24C04-RDS6G

STMicroelectronics

M24C04-RDS6G from STMicroelectronics is a 4096-bit EEPROM with I2C interface, ideal for industrial applications. It operates at a supply voltage of 1.8V to 5.5V and features a max clock frequency of 400 kHz. With a temperature range of -40 °C to 85 °C, it ensures reliability in harsh environments.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

S-PDSO-G8

e4

3 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

1.1 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

10 ms

HARDWARE

M24C04-RMB6TG by STMicroelectronics

M24C04-RMB6TG

STMicroelectronics

M24C04-RMB6TG from STMicroelectronics is a 4096-bit EEPROM with a synchronous operating mode and I2C interface. It operates b/w 1.8V to 5.5V, features a max temp of 85 °C, and offers hardware write protection for reliable data storage in industrial applications.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-N8

e4

3 mm

4096 bit

EEPROM

8

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

2/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE

M24C04-WBN6P by STMicroelectronics

M24C04-WBN6P

STMicroelectronics

M24C04-WBN6P by STMicroelectronics is a 512x8 EEPROM with a max clock frequency of 0.4 MHz. It operates in synchronous mode and has a temperature range of -40 to 85°C. This memory IC is commonly used in industrial applications for data storage and retrieval.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e3

9.27 mm

4096 bit

EEPROM

8

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

NOT SPECIFIED

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

7.62 mm

5 ms

HARDWARE

M24C08-RDS6G by STMicroelectronics

M24C08-RDS6G

STMicroelectronics

M24C08-RDS6G from STMicroelectronics is a 1Kx8 EEPROM with a wide supply voltage range of 1.8V to 5.5V and an industrial temperature grade (-40 °C to 85 °C). It features I2C interface for synchronous communication and offers up to 1M write/erase cycles, ideal for data storage in compact devices. Its small outline package ensures efficient use of space in electronic applications.

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

S-PDSO-G8

e4

3 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

1.1 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

M24C08-RDS6TG by STMicroelectronics

M24C08-RDS6TG

STMicroelectronics

M24C08-RDS6TG by STMicroelectronics is a 1Kx8 EEPROM with I2C interface, ideal for industrial applications. It operates b/w -40 °C to 85 °C and supports a supply voltage of 1.8V to 5.5V, ensuring reliability in various environments. With a write endurance of 1M cycles, it's perfect for data storage needs.

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

S-PDSO-G8

e4

3 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

1.1 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

M24C08-RMB6TG by STMicroelectronics

M24C08-RMB6TG

STMicroelectronics

M24C08-RMB6TG from STMicroelectronics is a compact EEPROM with a 1Kx8 organization, operating b/w 1.8V and 5.5V. It features I2C interface for synchronous communication and offers up to 1M write/erase cycles, ideal for industrial applications. With a max temp of 85 °C, it ensures reliability in demanding environments.

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDSO-N8

e4

3 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

2/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE

M24C08-RMN6P by STMicroelectronics

M24C08-RMN6P

STMicroelectronics

M24C08-RMN6P from STMicroelectronics is an industrial-grade EEPROM with a 1Kx8 organization, operating b/w -40 °C and 85 °C. It features I2C communication, a max clock frequency of 0.4 MHz, and offers hardware write protection for reliable data storage. Ideal for applications requiring non-volatile memory in compact designs.

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDSO-G8

e4

4.9 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

M24C08-WBN6P by STMicroelectronics

M24C08-WBN6P

STMicroelectronics

M24C08-WBN6P by STMicroelectronics is an EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 write/erase cycles endurance. It operates in synchronous mode at a max clock frequency of 0.4 MHz and has a serial I2C bus type. This industrial-grade memory IC is commonly used for hardware write protection applications.

.4 MHz

40

1000000 Write/Erase Cycles

1010DMMR

R-PDIP-T8

e3

9.27 mm

8192 bit

EEPROM

8

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

NOT SPECIFIED

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

7.62 mm

5 ms

HARDWARE

M24C16-RBN6P by STMicroelectronics

M24C16-RBN6P

STMicroelectronics

M24C16-RBN6P from STMicroelectronics is a 2Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w 1.8V to 5.5V, supports up to 1M write/erase cycles, and functions in industrial temperatures (-40 °C to 85 °C). Ideal for data storage in various electronic applications.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDIP-T8

e3

9.27 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

2.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M24C16-RDS6TG by STMicroelectronics

M24C16-RDS6TG

STMicroelectronics

M24C16-RDS6TG from STMicroelectronics is a 2Kx8 EEPROM with I2C interface, ideal for industrial applications. It operates at a supply voltage of 1.8-5.5V and features a max temp of 85 °C, ensuring reliability in harsh environments. With 1M write/erase cycles, it's perfect for data storage needs.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

S-PDSO-G8

e4

3 mm

16384 bit

EEPROM

8

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

1.1 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

10 ms

HARDWARE

M24C16-RMB6TG by STMicroelectronics

M24C16-RMB6TG

STMicroelectronics

M24C16-RMB6TG from STMicroelectronics is a 2Kx8 EEPROM with a wide supply voltage range of 1.8V to 5.5V, ideal for industrial applications. It features a max clock frequency of 400 kHz and offers hardware write protection for data integrity. With an endurance of 1M write/erase cycles, it's perfect for reliable data storage in compact devices.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDSO-N8

e4

3 mm

16384 bit

EEPROM

8

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

2/5

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

.8 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

5 ms

HARDWARE

M24C16-WBN6P by STMicroelectronics

M24C16-WBN6P

STMicroelectronics

STMicroelectronics M24C16-WBN6P is an 8-terminal EEPROM with 2Kx8 organization, operating at 5V. It features I2C control byte 1010MMMR and offers a memory density of 16384 bits. Ideal for industrial applications requiring reliable data storage with up to 1000000 write/erase cycles.

.4 MHz

40

1000000 Write/Erase Cycles

1010MMMR

R-PDIP-T8

e3

9.27 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M34E02-FMB1TG by STMicroelectronics

M34E02-FMB1TG

STMicroelectronics

M34E02-FMB1TG by STMicroelectronics is a compact EEPROM with a 256x8 organization, operating at 2.5V and supporting I2C communication. It features a max clock frequency of 400 kHz and offers hardware/software write protection. Ideal for low-power applications, it ensures reliable data retention with up to 1M write/erase cycles.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-XDSO-N8

e4

3 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

70 Cel

0 Cel

256X8

UNSPECIFIED

HVSSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH

SERIAL

1.8/3.3

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

2 mA

3.6 V

1.7 V

2.5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

2 mm

10 ms

HARDWARE/SOFTWARE

CAT28C64BL-12 by Catalyst Semiconductor

CAT28C64BL-12

Catalyst Semiconductor

CAT28C64BL-12 by Catalyst Semiconductor is an 8KX8 EEPROM with a memory density of 65536 bit. It operates at 5V, has a programming voltage of 5V, and offers endurance up to 1M Write/Erase cycles. Ideal for applications requiring reliable non-volatile memory storage in commercial temperature environments.

120 ns

NO

YES

1000000 Write/Erase Cycles

R-PDIP-T28

e3

36.695 mm

65536 bit

EEPROM

8

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

32

PARALLEL

5

5

Not Qualified

5.08 mm

.0001 Amp

EEPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

5 ms

M95080-RMB6TG by STMicroelectronics

M95080-RMB6TG

STMicroelectronics

M95080-RMB6TG by STMicroelectronics is a 1Kx8 EEPROM with a synchronous SPI interface, operating b/w 1.8V and 5.5V. It features a max clock frequency of 5 MHz and offers hardware/software write protection. Ideal for industrial applications, it endures up to 1M write/erase cycles.

5 MHz

40

1000000 Write/Erase Cycles

R-XBCC-N8

e4

3 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

UNSPECIFIED

VQCCN

SOLCC8,.11,20

RECTANGULAR

CHIP CARRIER, VERY THIN PROFILE

SERIAL

2/5

Not Qualified

.6 mm

SPI

.0000005 Amp

EEPROMs

1 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

BOTTOM

2 mm

5 ms

HARDWARE/SOFTWARE

M93C66-RMB6TG by STMicroelectronics

M93C66-RMB6TG

STMicroelectronics

STMicroelectronics M93C66-RMB6TG is a 4096-bit EEPROM with 256x16 organization, operating at 1 MHz clock frequency. It features software write protection and MICROWIRE serial bus type, suitable for industrial applications requiring reliable non-volatile memory storage. With a small outline package style and low standby current of 0.000002 Amp, it offers endurance of 1000000 Write/Erase Cycles.

8

1 MHz

40

1000000 Write/Erase Cycles

R-XDSO-N8

e4

3 mm

4096 bit

EEPROM

16

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X16

UNSPECIFIED

VSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

2/5

Not Qualified

.6 mm

MICROWIRE

.000002 Amp

EEPROMs

2 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

10 ms

SOFTWARE

XC18V02PC44C0936 by Xilinx

XC18V02PC44C0936

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Terminal Form: J BEND;

20 ns

S-PQCC-J44

e0

16.5862 mm

2097152 bit

CONFIGURATION MEMORY

8

3

1

44

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

Not Qualified

4.572 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

16.5862 mm

XCF01SVOG20C by Xilinx

XCF01SVOG20C

Xilinx

The Xilinx XCF01SVOG20C is a 1MX1 NOR type EEPROM with a memory density of 1048576 bits. It operates at a nominal voltage of 3.3V and has an endurance of 20000 write/erase cycles. This configuration memory is commonly used in industrial applications for storing and retrieving data efficiently.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G20

e3

6.5024 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

PLASTIC/EPOXY

TSSOP

TSSOP20,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8/3.3,3.3

Not Qualified

1.19 mm

.001 Amp

Flash Memories

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

NOR TYPE

4.4 mm

XCF02SVOG20C by Xilinx

XCF02SVOG20C

Xilinx

Xilinx XCF02SVOG20C is a 2MX1 NOR EEPROM with 2097152-bit memory density. Operating at 3.3V, it offers 20000 write/erase cycles and supports industrial temperature grade applications. With a small outline package style, 0.65mm terminal pitch, and Gull Wing terminals, it's ideal for configuration memory needs in various electronic devices.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G20

e3

6.5024 mm

2097152 bit

CONFIGURATION MEMORY

1

3

1

20

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX1

PLASTIC/EPOXY

TSSOP

TSSOP20,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8/3.3,3.3

Not Qualified

1.19 mm

.001 Amp

Flash Memories

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

NOR TYPE

4.4 mm

XCF08PFSG48C by Xilinx

XCF08PFSG48C

Xilinx

Xilinx XCF08PFSG48C is a 1.8V EEPROM with 8MX1 organization, NOR type, and 8388608-bit memory density. It operates at -40 to 85°C for industrial applications, featuring a max clock frequency of 33 MHz in a thin profile grid array package.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

20000 Write/Erase Cycles

R-PBGA-B48

e2

9 mm

8388608 bit

CONFIGURATION MEMORY

1

3

1

48

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF08PVOG48C by Xilinx

XCF08PVOG48C

Xilinx

Xilinx XCF08PVOG48C is a 1.8V EEPROM with 8MX1 organization, NOR type, and 8388608-bit memory density. Operating at -40 to 85°C, it's ideal for industrial applications requiring a small outline package with thin profile and shrink pitch. With synchronous operation up to 33MHz, this configuration memory offers reliable performance in various electronic systems.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

20000 Write/Erase Cycles

R-PDSO-G48

e3

18.45 mm

8388608 bit

CONFIGURATION MEMORY

1

3

1

48

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NOR TYPE

12 mm

XCF16PFSG48C by Xilinx

XCF16PFSG48C

Xilinx

Xilinx XCF16PFSG48C is a 1.8V EEPROM with 16MX1 organization, NOR type, and 16777216-bit memory density. It operates in industrial temperature range (-40 to 85 °C) and has a thin profile grid array package suitable for configuration memory applications. With 20000 write/erase cycles endurance, it offers reliable performance in various industrial settings.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PBGA-B48

e2

9 mm

16777216 bit

CONFIGURATION MEMORY

1

3

1

48

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF16PVOG48C by Xilinx

XCF16PVOG48C

Xilinx

Xilinx XCF16PVOG48C is a 1.8V EEPROM with 16MX1 organization, NOR type, and 16777216-bit memory density. It operates in industrial temperature range (-40 to 85°C) and offers 20000 write/erase cycles. Ideal for configuration memory applications due to its small outline package style and serial interface.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G48

e3

18.45 mm

16777216 bit

CONFIGURATION MEMORY

1

3

1

48

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NOR TYPE

12 mm

XCF32PFSG48C by Xilinx

XCF32PFSG48C

Xilinx

Xilinx XCF32PFSG48C is a 32MX1 EEPROM with 3-STATE output, operating at 50 MHz clock frequency. It has 33554432-bit memory density and supports NOR type technology. Ideal for industrial applications, it offers 20000 Write/Erase cycles endurance and operates in a temperature range of -40 to 85°C.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

50 MHz

20

20000 Write/Erase Cycles

R-PBGA-B48

e2

9 mm

33554432 bit

CONFIGURATION MEMORY

1

3

1

48

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

260

1.5/3.3,1.8

1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

HARDWARE

XCF32PVOG48C by Xilinx

XCF32PVOG48C

Xilinx

Xilinx XCF32PVOG48C is a 32MX1 EEPROM with 33554432-bit memory density. Operating at 1.8V, it offers 20000 write/erase cycles and supports industrial temperature grade applications. With a small outline package style, it features synchronous operation and GULL WING terminal form for serial configuration memory needs.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G48

e3

18.45 mm

33554432 bit

CONFIGURATION MEMORY

1

3

1

48

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NOR TYPE

12 mm

XC17S100AVOG8C by Xilinx

XC17S100AVOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; JESD-609 Code: e3;

COMMON

R-PDSO-G8

e3

4.9 mm

781216 bit

CONFIGURATION MEMORY

1

3

1

8

781216 words

781216

SYNCHRONOUS

70 Cel

0 Cel

781216X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S15AVOG8C by Xilinx

XC17S15AVOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Package Equivalence Code: SOP8,.25;

COMMON

R-PDSO-G8

e3

4.9 mm

197696 bit

CONFIGURATION MEMORY

1

3

1

8

197696 words

197696

SYNCHRONOUS

70 Cel

0 Cel

197696X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S200AVOG8C by Xilinx

XC17S200AVOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3;

COMMON

R-PDSO-G8

e3

4.9 mm

1335840 bit

CONFIGURATION MEMORY

1

3

1

8

1335840 words

1335840

SYNCHRONOUS

70 Cel

0 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S200AVOG8I by Xilinx

XC17S200AVOG8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8;

COMMON

R-PDSO-G8

e3

4.9 mm

1335840 bit

CONFIGURATION MEMORY

1

3

1

8

1335840 words

1335840

SYNCHRONOUS

85 Cel

-40 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S50AVOG8C by Xilinx

XC17S50AVOG8C

Xilinx

The Xilinx XC17S50AVOG8C is a 559200-bit EEPROM with 3.3V supply voltage, operating in synchronous mode. It features a small outline package and Gull Wing terminals, suitable for configuration memory applications. With a max temperature of 70°C, it offers 3-STATE output characteristics and consumes up to 15mA supply current.

COMMON

R-PDSO-G8

e3

4.9 mm

559200 bit

CONFIGURATION MEMORY

1

3

1

8

559200 words

559200

SYNCHRONOUS

70 Cel

0 Cel

559200X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC1736EVOG8C by Xilinx

XC1736EVOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 10 MHz;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

10 MHz

COMMON

R-PDSO-G8

e3

4.9276 mm

36288 bit

CONFIGURATION MEMORY

1

3

1

8

36288 words

36288

SYNCHRONOUS

70 Cel

0 Cel

36288X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

5

Not Qualified

1.1938 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.937 mm

XC1765ELVOG8C by Xilinx

XC1765ELVOG8C

Xilinx

XC1765ELVOG8C by Xilinx is a 64KX1 EEPROM with 3.3V supply, operating at up to 2.5 MHz clock frequency. It features a small outline package suitable for commercial applications, offering 65536 bits of memory density and serial interface for configuration memory tasks.

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

2.5 MHz

COMMON

R-PDSO-G8

e3

4.9276 mm

65536 bit

CONFIGURATION MEMORY

1

3

1

8

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.1938 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.937 mm

XC18V04VQG44C by Xilinx

XC18V04VQG44C

Xilinx

XC18V04VQG44C by Xilinx is a 512Kx8 EEPROM with NOR type technology. Operating at 3.3V, it offers 20MHz clock frequency and 20000 write/erase cycles. Ideal for industrial applications requiring high memory density and fast access times in a compact thin profile package.

20 ns

20 MHz

20

20000 Write/Erase Cycles

S-PQFP-G44

e3

10 mm

4194304 bit

CONFIGURATION MEMORY

8

3

1

44

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

260

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V512VQG44C by Xilinx

XC18V512VQG44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Moisture Sensitivity Level (MSL): 3;

15 ns

33 MHz

20

20000 Write/Erase Cycles

S-PQFP-G44

e3

10 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

44

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

260

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V01VQG44C by Xilinx

XC18V01VQG44C

Xilinx

Xilinx XC18V01VQG44C is a 128Kx8 EEPROM with 3.3V nominal voltage, operating at up to 33MHz clock frequency. Ideal for industrial applications, it offers 20000 write/erase cycles and supports parallel/serial operation in a compact square package.

15 ns

33 MHz

20

20000 Write/Erase Cycles

S-PQFP-G44

e3

10 mm

1048576 bit

CONFIGURATION MEMORY

8

3

1

44

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

260

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V02VQG44C by Xilinx

XC18V02VQG44C

Xilinx

XC18V02VQG44C by Xilinx is a 256Kx8 EEPROM with 20MHz clock frequency, operating at -40 to 85°C. It has NOR type technology, supports parallel/serial mode, and offers 20000 write/erase cycles. Ideal for industrial applications requiring configuration memory with a memory density of 2097152 bits.

20 ns

20 MHz

20

20000 Write/Erase Cycles

S-PQFP-G44

e3

10 mm

2097152 bit

CONFIGURATION MEMORY

8

3

1

44

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

260

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

24LC024H-I/P by Microchip Technology

24LC024H-I/P

Microchip Technology

24LC024H-I/P by Microchip Technology is an EEPROM with 256x8 organization, operating at 1 MHz clock frequency. It has a supply voltage range of 2.5V to 5.5V and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.271 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

4.5

Not Qualified

TS 16949

5.334 mm

I2C

.000005 Amp

3 mA

5.5 V

2.5 V

4.5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE